Process for producing a group-III nitride crystal and process for producing a light-emitting semiconductor element or a semiconductor device comprising a group-III nitride crystal
View Patent ↗Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following Z1>0 expression (1), wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2<0 expression (2), wherein Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate.
1. A method for producing a light-emitting semiconductor element or a semiconductor device, which comprises growing a Group-III nitride crystal on a growth surface of a single-crystal substrate, wherein the single-crystal substrate satisfies the following expressions (1) and (2) and has a back surface of concave shape, wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single crystal substrate:
Z 1>0 Expression (1)
Z 2<0 Expression (2).
2. The method according to claim 1 , wherein the single-crystal substrate is a hexagonal crystal, and a crystallographic plane of the growth surface thereof is any one of a {0001} plane, a {10-10} plane, a {11-20} plane, a {11-22} plane, and a {20-21} plane.
3. The method according to claim 1 , wherein the single-crystal substrate comprises a Group-III nitride crystal.
4. The method according to claim 1 , wherein the single-crystal substrate has an area of 20 cm 2 or more.
5. The method according to claim 1 , wherein a thickness of the single-crystal substrate is 100 μm to 1,000 μm.
6. The method according to claim 1 , wherein the growth surface is a polished surface.
7. The method according to claim 1 , wherein in the step of growing a Group-III nitride crystal, the Group-III nitride crystal is vapor-phase grown.
8. The method according to claim 7 , wherein a method of vapor-phase growth is at least one method selected from the group consisting of an HVPE method, a MOCVD method, a MBE method or a sublimation method.
9. A method for producing a Group-III nitride crystal, which comprises growing a Group-III nitride crystal on a growth surface of a single-crystal substrate, wherein the single-crystal substrate satisfies the following expressions (1) and (2) and has a back surface of concave shape, wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single crystal substrate:
Z 1>0 Expression (1)
Z 2<0 Expression (2).
10. The method according to claim 9 , wherein the single-crystal substrate is a hexagonal crystal, and a crystallographic plane of the growth surface thereof is any one of a {0001} plane, a {10-10} plane, a {11-20} plane, a {11-22} plane, and a {20-21} plane.
11. The method according to claim 9 , wherein the single-crystal substrate comprises a Group-III nitride crystal.
12. The method according to claim 9 , wherein the single-crystal substrate has an area of 20 cm 2 or more.
13. The method according to claim 9 , wherein a thickness of the single-crystal substrate is 100 μm to 1,000 μm.
14. The method according to claim 9 , wherein the growth surface is a polished surface.
15. The method according to claim 9 , wherein in the step of growing a Group-III nitride crystal, the Group-III nitride crystal is vapor-phase grown.
16. The method according to claim 15 , wherein a method of vapor-phase growth is at least one method selected from the group consisting of an HVPE method, a MOCVD method, a MBE method or a sublimation method.
17. The method according to claim 9 , which, after the step of growing the Group-III nitride crystal, further comprises removing the single-crystal substrate from the grown Group-III nitride crystal.
18. The method according to claim 9 , wherein the Group-III nitride crystal to be grown in the step of growing is a GaN crystal.