Metallization of solar cells
View Patent ↗Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a plurality of alternating N-type and P-type regions in or above a substrate. The method also involves forming a metal seed layer on the plurality of alternating N-type and P-type regions. The method also involves patterning at least a portion of the metal seed layer at regions in alignment with locations between the alternating N-type and P-type regions. The method also involves, subsequent to the patterning, etching to form trenches at the locations between the alternating N-type and P-type regions, isolating the alternating N-type and P-type regions from one another.
1. A method of fabricating a solar cell, the method comprising:
forming a plurality of alternating N-type and P-type regions in or above a substrate;
forming a metal seed layer on the plurality of alternating N-type and P-type regions;
patterning only a portion of the metal seed layer at regions in alignment with locations between the alternating N-type and P-type regions; and
subsequent to the patterning, etching a remainder of the metal seed layer and the alternating N-type and P-type regions to form trenches at the locations between the alternating N-type and P-type regions, isolating the alternating N-type and P-type regions from one another, wherein etching the remainder of the metal seed layer and the alternating N-type and P-type regions is performed using a process different than a process used to pattern only the portion of the metal seed layer.
2. The method of claim 1 , further comprising:
prior to the patterning, forming an aluminum foil layer on the metal seed layer, wherein the patterning further comprises patterning the aluminum foil layer at regions in alignment with the locations between the alternating N-type and P-type regions, leaving remaining portions of the metal seed layer and the aluminum foil layer at regions in alignment with the alternating N-type and P-type regions.
3. The method of claim 2 , wherein forming the metal seed layer comprises forming a metal layer comprising aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 1-2%.
4. The method of claim 1 , further comprising:
prior to the patterning, forming a resist layer on the metal seed layer, wherein the patterning further comprises patterning the resist layer at regions in alignment with the locations between the alternating N-type and P-type regions, leaving remaining portions of the metal seed layer and the resist layer at regions in alignment with the alternating N-type and P-type regions.
5. The method of claim 4 , wherein forming the metal seed layer comprises forming a first metal layer comprising aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 1-2%, forming a second metal layer comprising titanium and tungsten (TiW), and forming a third metal layer comprising copper.
6. The method of claim 4 , further comprising:
subsequent to etching to form the trenches, patterning the remaining portions of the resist layer to expose regions of the remaining portions of the metal seed layer; and
plating metal contact features on the exposed regions of the remaining portions of the metal seed layer.
7. The method of claim 1 , further comprising:
forming a passivation material at least in the trenches.
8. The method of claim 7 , wherein forming the passivation material further comprises forming the passivation material on remaining portions of the metal seed layer in alignment with the alternating N-type and P-type regions, the method further comprising:
patterning portions of the passivation material to expose regions of the remaining portions of the metal seed layer; and
plating metal contact features on the exposed regions of the remaining portions of the metal seed layer.
9. The method of claim 8 , wherein forming the metal seed layer comprises forming a first metal layer comprising aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 1-2%, and forming a second metal layer comprising nickel.
10. The method of claim 1 , wherein the plurality of alternating N-type and P-type regions is formed in a polycrystalline silicon layer formed on a thin dielectric layer formed on the substrate.
11. The method of claim 1 , wherein etching to form the trenches in the semiconductor layer comprises etching using an aqueous hydroxide-based solution.
12. The method of claim 1 , wherein patterning at least the portion of the metal seed layer comprises laser ablating the portion of the metal seed layer.
13. A method of fabricating a solar cell, the method comprising:
forming a plurality of semiconductor regions in or above a substrate;
forming a metal seed layer on the plurality of semiconductor regions;
patterning only a portion of the metal seed layer at regions in alignment with locations between the semiconductor regions; and
subsequent to the patterning, etching a remainder of the metal seed layer and the semiconductor regions to form trenches at the locations between the semiconductor regions, isolating the semiconductor regions from one another, wherein etching the remainder of the metal seed layer and the semiconductor regions is performed using a process different than a process used to pattern only the portion of the metal seed layer.
14. The method of claim 13 , further comprising:
prior to the patterning, forming an aluminum foil layer on the metal seed layer, wherein the patterning further comprises patterning the aluminum foil layer at regions in alignment with the locations between the semiconductor regions, leaving remaining portions of the metal seed layer and the aluminum foil layer at regions in alignment with the semiconductor regions.
15. The method of claim 1 , further comprising:
prior to the patterning, forming a resist layer on the metal seed layer, wherein the patterning further comprises patterning the resist layer at regions in alignment with the locations between the semiconductor regions, leaving remaining portions of the metal seed layer and the resist layer at regions in alignment with the semiconductor regions.
16. The method of claim 15 , wherein forming the metal seed layer comprises forming a first metal layer comprising aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 1-2%, forming a second metal layer comprising titanium and tungsten (TiW), and forming a third metal layer comprising copper.
17. The method of claim 15 , further comprising:
subsequent to etching to form the trenches, patterning the remaining portions of the resist layer to expose regions of the remaining portions of the metal seed layer; and
plating metal contact features on the exposed regions of the remaining portions of the metal seed layer.
18. The method of claim 15 , further comprising:
forming a passivation material at least in the trenches.
19. The method of claim 18 , wherein forming the passivation material further comprises forming the passivation material on remaining portions of the metal seed layer in alignment with the semiconductor regions, the method further comprising:
patterning portions of the passivation material to expose regions of the remaining portions of the metal seed layer; and
plating metal contact features on the exposed regions of the remaining portions of the metal seed layer.