Solid-state image sensor, method for driving solid-state image sensor, and electronic device
Provided is a solid-state image sensor including a pixel array unit and a driving control unit. In the pixel array unit, pixels each including a charge accumulation unit accumulating a photocharge corresponding to an amount of received light, a signal conversion unit converting the photocharge into an electric signal, and a charge transfer unit performing, with a driving signal, switching between a conduction state and a non-conduction state, the charge transfer unit being disposed between the charge accumulation unit and the signal conversion unit are arranged. The driving control unit controls a state of the charge transfer unit with the driving signal and performs a first driving control in which the charge transfer unit is kept being in the conduction state from when the photocharge is transferred from the charge accumulation unit to the signal conversion unit until when a first signal corresponding to the transferred photocharge is read out.
1. A solid-state image sensor comprising:
a reset transistor that is controllable to transition between a non-conduction state and a conduction state during high conversion efficiency driving and during low conversion efficiency driving, the conduction state is an electrical connection between a power supply line and a floating diffusion; and
a transfer transistor that is controllable to provide an electrical connection between a photoelectric conversion unit and the floating diffusion only during the non-conduction state, the non-conduction state is an electrical disconnection of the floating diffusion from the power supply line,
a driving unit that automatically switches a driving operation between the high conversion efficiency driving and the low conversion efficiency driving in accordance with an amount of light received by the photoelectric conversion unit;
wherein during the high conversion efficiency driving, the transfer transistor is controllable to electrically connect the photoelectric conversion unit to the floating diffusion for a first length of time and then to disconnect the photoelectric conversion unit from the floating diffusion, and
wherein during the low conversion efficiency driving, the transfer transistor is controllable to electrically connect the photoelectric conversion unit to the floating diffusion for a second length of time that is longer than the first length of time and then to disconnect the photoelectric conversion unit from the floating diffusion.
2. The solid-state image sensor according to claim 1 , wherein the floating diffusion is electrically connected to a gate of an amplifying transistor.
3. The solid-state image sensor according to claim 2 , further comprising:
a selection transistor that is controllable to provide an electrical connection and disconnection between the amplifying transistor and a vertical signal line.
4. The solid-state image sensor according to claim 3 , wherein the amplifying transistor is controllable to provide an electrical connection and disconnection between the selection transistor and the power supply line.
5. The solid-state image sensor according to claim 2 , wherein in a pixel layout, the amplifying transistor is between the reset transistor and the selection transistor.
6. The solid-state image sensor according to claim 5 , wherein in the pixel layout, the photoelectric conversion unit is between the amplifying transistor and the floating diffusion.
7. The solid-state image sensor according to claim 1 , wherein the photoelectric conversion unit is configured to convert the light into photocharges.
8. An electronic device comprising:
the solid-state image sensor according to claim 1 ; and
a signal processing unit that processes a pixel signal output from a pixel.
9. A method for driving a solid-state image sensor comprising:
transitioning between a non-conduction state and a conduction state during high conversion efficiency driving, the conduction state is an electrical connection between a power supply line and a floating diffusion;
transitioning between the non-conduction state and the conduction state during low conversion efficiency driving, the non-conduction state is an electrical disconnection of the floating diffusion from the power supply line; and
providing an electrical connection between a photoelectric conversion unit and the floating diffusion only during the non-conduction state,
automatically switching a driving operation between the high conversion efficiency driving and the low conversion efficiency driving in accordance with an amount of light received by the photoelectric conversion unit;
wherein during the high conversion efficiency driving, the photoelectric conversion unit is electrically connected to the floating diffusion for a first length of time and then to disconnect the photoelectric conversion unit from the floating diffusion, and
wherein during the low conversion efficiency driving, the photoelectric conversion unit is electrically connected to the floating diffusion for a second length of time that is longer than the first length of time and then to disconnect the photoelectric conversion unit from the floating diffusion.
10. The method according to claim 9 , wherein the floating diffusion is electrically connected to a gate of an amplifying transistor.
11. The method according to claim 10 , further comprising:
providing an electrical connection and disconnection between the amplifying transistor and a vertical signal line.
12. The method according to claim 9 , wherein the photoelectric conversion unit converts the light into photocharges.
13. The method according to claim 9 , further comprising:
providing an electrical connection and disconnection between a selection transistor and the power supply line.