Singlet harvesting with dual-core copper (I) complexes for optoelectronic devices

1. A copper(I) complex for the emission of light comprising a structure according to formula A:

wherein:

Cu is Cu(I);

X is selected from the group consisting of Cl, Br, I, SCN, CN, and alkynyl (R*—≡), wherein R*=R;

P∩N is a phosphine ligand substituted with an N-hetereocycle comprising a structure according to formula B:

wherein:

E is a carbon or a nitrogen atom;

E′ is a carbon or nitrogen atom, not substituted with a hydrogen atom;

dotted bond represents a single or double bond;

R is selected from the group consisting of a substituted or unsubstituted alkyl group [CH 3 —(CH 2 ) n -] (n is an integer from 0 to 20), a substituted or unsubstituted aryl group, and an unsaturated group selected from an alkenyl and an alkynyl group, wherein R is not a hydrogen atom;

R′, R″ are independently selected from the group consisting of a substituted or unsubstituted alkyl group [CH 3 —(CH 2 ) n -] (n is an integer from 0 to 20), a substituted or unsubstituted aryl group, and a heteroaryl group, wherein R′ and R″ are each directly bound to the phosphorous atom of the phosphine ligand; and wherein the N-heterocycle is an aromatic 6- or 5-membered ring selected from:

wherein

R1, R2, R3, are each selected from the group consisting of hydrogen, a substituted or unsubstituted alkyl group [CH 3 —(CH 2 ) n ] (n is an integer from 0 to 20), a substituted or unsubstituted aryl group, and an unsaturated group selected from an alkenyl and an alkynyl group; and

wherein the N-heterocycle is linked to the phosphorous atom at the positions marked with #.

2. The copper(I) complex of claim 1 , wherein R is an alkyl group [CH 3 —(CH 2 ) n -] (n is an integer from 0 to 20) substituted with halogens.

3. The copper(I) complex of claim 1 , wherein R is an aryl group substituted with an alkyl group, a halogen, a silane (—SiR* 3 ) wherein R* is the same as R1, or an ether group —OR** wherein R** is the same as R1.

4. The copper(I) complex of claim 1 , wherein R is an unsaturated group substituted with an alkyl group, a halogen, a silane (—SiR* 3 ) wherein R* is the same as R1, or an ether group —OR** wherein R** is the same as R1.

5. The copper(I) complex of claim 1 , wherein R′ and R″ are independently an alkyl group [CH 3 —(CH 2 ) n -] with n is an integer >6.

6. The copper(I) complex of claim 1 , wherein the aryl and heteroaryl groups are substituted with alkyl groups, halogens, silane (—SiR* 3 ) or ether groups —OR*, wherein R*is the same as R1.

7. The copper(I) complex of claim 1 , wherein R1, R2, and R3 are hydrogen atoms.

8. The copper(I) complex of claim 1 , wherein R, R1, R2, and R3 form annulated ring systems.

9. The copper(I) complex of claim 1 , wherein R, R1, R2, R3, R′ and R″ increase the solubility of the copper(I) complex in organic solvents.

10. The copper(I) complex of claim 1 further comprising:

a ΔE(S 1 −T 1 )-value between a lowest triplet state and a singlet state above the lowest triplet state of less than 2500 cm −1 ;

an emission quantum yield of greater than 20%; and

an emission lifetime of at most 20 μs.

11. The copper(I) complex of claim 1 , wherein the copper(I) complex is used for emission of light in an emitter layer in an optoelectronic device.

12. A method for manufacturing an optoelectronic device using the copper(I) complex of claim 1 , wherein the copper(I) complex is applied to a solid by using a wet-chemical process, a colloidal suspension process, or a sublimation process.

13. The method according to claim 12 , wherein the manufacturing is performed by using a wet-chemical process comprising:

depositing a first copper(I) complex that is dissolved in a first solvent onto a carrier; and

depositing a second copper(I) complex that is dissolved in a second solvent onto the carrier;

wherein the first copper(I) complex is not soluble in the second solvent and the second copper(I) complex is not soluble in the first solvent;

wherein the first copper(I) complex and the second copper(I) complex are each a copper(I) complex according to claim 1 .

14. The method of claim 13 further comprising:

depositing a third copper(I) complex that is dissolved in the first solvent or in a third solvent onto the carrier;

wherein the third copper(I) complex is a copper(I) complex according to claim 1 .

15. The method according to claim 14 , wherein the optoelectronic device is a white light-OLED, wherein the first copper(I) complex is a red light emitter, the second copper(I) complex is a green light emitter and the third copper(I) complex is a blue light emitter.

16. An optoelectronic device, comprising a copper(I) complex comprising a ΔE difference between a lowest triplet state and a singlet state above the lowest triplet state between 50 cm −1 and 2500 cm −1 .

17. The optoelectronic device of claim 16 , wherein the copper(I) complex is a copper(I) complex according to claim 1 used for emission of light in an emitter layer in the optoelectronic device.

18. The optoelectronic device of claim 17 , wherein a fraction of the copper(I) complex in the emitter layer is in the range of 2% to 100% by weight with respect to a total weight of the emitter layer.

19. The optoelectronic device of claim 18 , wherein the optoelectronic device is an organic light emitting diode (OLED).

20. The optoelectronic device of claim 17 , wherein the optoelectronic device is selected from the group consisting of an organic light emitting diode (OLED), a light-emitting electrochemical cell, an OLED-sensor, a gas or a vapor sensor that is not hermetically sealed from the outside, an optical temperature sensor, an organic solar cell (OSC), an organic field-effect transistor, an organic laser, an organic diode, an organic photo diode and a down conversion system.