Semiconductor device and method of manufacturing the same

1. A semiconductor device comprising:

a semiconductor substrate;

a main electrode, the main electrode including:

a first metal film having a first face that is formed on a surface of an element formation field of the semiconductor substrate, and a second face that is located opposite to the first face, at least a part of the first metal film directly contacting the semiconductor substrate, and

a second metal film that is joined directly to the second face of the first metal film and that is different in Seebeck coefficient from the first metal film; and

a detection terminal that detects a potential difference between the first metal film and the second metal film; wherein

a current of a main element formed in the element formation field of the semiconductor substrate and a current during detection of a temperature are the same, and

the semiconductor device is configured such that the potential difference between the first and the second metal films is measured during operation of the main element.

2. The semiconductor device according to claim 1 , wherein

the detection terminal is equipped with a first detection terminal that is electrically connected to the first metal film, and a second detection terminal that is electrically connected to the second metal film,

the first detection terminal is formed of a same material as the first metal film, and

the second detection terminal is formed of a same material as the second metal film.

3. The semiconductor device according to claim 1 , wherein

the first metal film is a metal film that contains 10 or more mass % of Al as a main component, and

the second metal film is a metal film that contains 10 or more mass % of at least one substance selected from a group of Ni, Ti, Mo, W, Ag, Cu and Zn as a main component.

4. The semiconductor device according to claim 3 , wherein the first metal film has a thickness equal to or larger than 1 μm.

5. The semiconductor device according to claim 3 , wherein

the second metal film is a metal film that contains 10 or more mass % of Ni as a main component, and

the second metal film has a thickness equal to or larger than 500 nm.

6. The semiconductor device according to claim 1 , wherein

the first metal film is a metal film that contains 10 or more mass % of Ni as a main component, and

the second metal film is a metal film that contains 10 or more mass % of at least one substance selected from a group of Zn and Ti.

7. The semiconductor device according to claim 6 , wherein

the first metal film has a thickness equal to or larger than 500 nm.

8. The semiconductor device according to claim 1 , wherein the main element formed in the element formation field of the semiconductor substrate is selected from the group consisting of a diode, a metal-oxide-semiconductor field-effect transistor (MOFSET), and an insulated-gate bipolar transistor (IGBT).

9. The semiconductor device according to claim 1 , further comprising a protection film encapsulating a wiring system.

10. The semiconductor device according to claim 1 , further comprising a protection film encapsulating a wiring system, wherein a top surface of the protection film is coplanar to a top surface of the second metal film.

11. A method of manufacturing a semiconductor device that is equipped with:

a semiconductor substrate;

a main electrode, the main electrode including:

a first metal film having a first face that is formed on a surface of an element formation field of the semiconductor substrate, and a second face that is located opposite to the first face, at least a part of the first metal film directly contacting the semiconductor substrate, and

a second metal film that is joined directly to the second face of the first metal film and that is different in Seebeck coefficient from the first metal film; and

a detection terminal that detects a potential difference between the first metal film and the second metal film, wherein

a current of a main element formed in the element formation field of the semiconductor substrate and a current during detection of a temperature are the same, and

the semiconductor device is configured such that the potential difference between the first and the second metal films is measured during operation of the main element; the method comprising:

depositing the first metal film and the second metal film continuously in a vacuum through sputtering.

12. The method of manufacturing according to claim 11 , wherein

the first metal film and the second metal film are deposited through sputtering through use of a deposition target with a purity equal to or higher than 99%, under a condition that a standby degree of vacuum of a sputtering chamber be equal to or lower than 1×10 −6 Pa, that a pressure fluctuation in the chamber during deposition be equal to or lower than 10%, and that a deposition gas purity be equal to or higher than 99%.

13. The method of manufacturing according to claim 11 , wherein the main element formed in the element formation field of the semiconductor substrate is selected from the group consisting of a diode, a metal-oxide-semiconductor field-effect transistor (MOFSET), and an insulated-gate bipolar transistor (IGBT).

14. The method of manufacturing according to claim 11 , wherein the semiconductor device further comprises a protection film encapsulating a wiring system.

15. The method of manufacturing according to claim 11 , wherein

the semiconductor device further comprises a protection film encapsulating a wiring system, and

a top surface of the protection film is coplanar to a top surface of the second metal film.