Solid state energy storage devices
Solid state energy storage systems and devices are provided. A solid state energy storage devices can include an active layer disposed between conductive electrodes, the active layer having one or more quantum confinement species (QCS), such as quantum dots, quantum particles, quantum wells, nanoparticles, nanostructures, nanowires and nanofibers. The solid state energy storage device can have a charge rate of at least about 500 V/s and an energy storage density of at least about 150 Whr/kg.
1. A solid state energy storage device, comprising:
a first conductive electrode and second conductive electrode; and
a first active layer between the first and second conductive electrodes, a second active layer between the first and second conductive electrodes,
wherein the active layers each have a permittivity that varies non-linearly with voltage, wherein the active layers each comprise one or more quantum confinement species (QCS);
an insulating layer about 1 nm to 25 nm in thickness between and in contact with the first and second active layers;
an insulating layer having a graded permittivity between and in contact with the first conductive electrode and the first active layer; and
an insulating layer having a graded permittivity between and in contact with the second conductive electrode and the second active layer.
2. The device of claim 1 , wherein the QCS comprise quantum dots, quantum particles, quantum wells, quantum wires, nanocrystals, nanoparticles, nanostructures, nanowires, nanofibers, bulk material, or any combination thereof.
3. The device of claim 1 , wherein the QCS have a diameter less than about 20 nanometers.
4. The device of claim 1 , wherein the device has an effective breakdown strength of at least about 0.9 V/nm, and wherein said QCS are embedded in said active layers.
5. The device of claim 4 , wherein the active layers comprise titanium oxide, lithium oxide, lithium fluoride, silicon oxide, silicon nitride, silicon oxynitride, magnesium oxide, praseodymium oxide, aluminum oxide, diamond, hafnium oxide, or any combination thereof.
6. The device of claim 1 , wherein the active layers have a first permittivity (ε 1 ) which changes to a second permittivity (ε 2 ) at the critical voltage.
7. The device of claim 6 , wherein (ε 1 ) is less than about 20 and wherein (ε 2 ) is greater than about 50.
8. A solid state energy storage device, comprising:
a first conductive electrode and second conductive electrode; and
a first active layer between the first and second conductive electrodes,
a second active layer between the first and second conductive electrodes,
wherein the active layers each comprise one or more quantum confinement species (QCS) in a matrix, wherein the breakdown field (E max ) of the device is at least about 0.9 V/nm, wherein the active layers each have a permittivity that varies non-linearly with voltage;
an insulating layer about 1 nm to 25 nm in thickness between and in contact with the first and second active layers;
an insulating layer having a graded permittivity between and in contact with the first conductive electrode and the first active layer; and
an insulating layer having a graded permittivity between and in contact with the second conductive electrode and the second active layer.
9. A solid state energy storage device, comprising:
a first conductive electrode and second conductive electrode; and
a first active layer between the first and second conductive electrodes,
a second active layer between the first and second conductive electrodes,
wherein the active layers each comprise one or more quantum confinement species (QCS) in a matrix;
an insulating layer about 1 nm to 25 nm in thickness between and in contact with the first and second active layers;
an insulating layer having a graded permittivity between and in contact with the first conductive electrode and the first active layer; and
an insulating layer having a graded permittivity between and in contact with the second conductive electrode and the second active layer;
wherein said solid state energy storage device has an electric field strength greater than about 0.5 V/nm in an area less than about 1 μm 2 .
10. The device of claim 9 , wherein the device has a field strength greater than about 2 V/nm only in areas less than about 100 nm 2 .
11. The device of claim 9 , wherein the QCS are shaped so as to have a high separation of the tunneled charges and a low distance between QCS.