Optoelectronic component
View Patent ↗An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of In x1 Al y1 Ga 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1 and x1+y1≦1, and at least one quantum well layer composed of In x2 Al y2 Ga 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1 and x2+y2≦1.
1. An optoelectronic device having an active layer comprising a multiplicity of structural elements laterally spaced apart from one another, wherein the structural elements each have a quantum well structure comprising at least one barrier layer composed of In x1 Al y1 Ga 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1 and x1+y1≦1, a plurality of intermediate layers composed of In x Al 1-x N, wherein 0≦x≦0.6, and at least one quantum well layer composed of In x2 Al y2 Ga 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1 and x2+y2≦1, wherein the quantum well structure is a multiple quantum well structure in which the barrier layer and the quantum well layer are repeated a number of times with a first period length and the intermediate layers are repeated a number of times with a second period length, the first period length not being the same as the second period length.
2. The optoelectronic device according to claim 1 , wherein indium content x of the intermediate layers is 0.09≦x≦0.27.
3. The optoelectronic device according to claim 1 , wherein the intermediate layers have a thickness of less than 1.5 nm.
4. The optoelectronic device according to claim 1 , wherein the structural elements have, at least in certain regions, a shape of a cylinder, a cuboid, a prism, a pyramid or a truncated pyramid.
5. The optoelectronic device according to claim 1 , wherein the structural elements have, at least in certain regions, a shape of a hexagonal pyramid, a truncated hexagonal pyramid or a hexagonal prism.
6. The optoelectronic device according to claim 1 , wherein the structural elements have a width of 20 μm or less.
7. The optoelectronic device according to claim 1 , wherein the structural elements have a width of 5 nm to 5 μm.
8. The optoelectronic device according to claim 1 , further comprising a mask layer arranged in the optoelectronic device, and wherein the structural elements are each arranged in an opening in the mask layer.
9. The optoelectronic device according to claim 1 , wherein the at least one barrier layer and/or the at least one quantum well layer comprise In x Al 1-x N, wherein 0≦x≦0.35.
10. The optoelectronic device according to claim 9 , wherein indium content x of the barrier layer and/or the quantum well layer is 0.09≦x≦0.27.
11. The optoelectronic device according to claim 1 , wherein the structural elements each have a layer stack that contains the quantum well structure, and layers of a layer stack are arranged one above the other such that they do not overlap in a lateral direction.
12. The optoelectronic device according to claim 11 , further comprising an electrically insulating layer arranged between the structural elements that are laterally spaced apart from one another.
13. The optoelectronic device according to claim 1 , wherein the structural elements each have a layer stack that contains the quantum well structure, the layers of the layer stack being arranged one above the other such that a layer of the layer stack arranged above an underlying layer entirely covers the underlying layer including side flanks thereof.
14. The optoelectronic device according to claim 1 , further comprising a layer composed of a transparent conductive oxide applied to the active layer, the layer composed of the transparent conductive oxide forming a common electrical contact for the multiplicity of structural elements.
15. An optoelectronic device having an active layer that comprises a multiplicity of structural elements laterally spaced apart from one another, wherein the structural elements each have a quantum well structure comprising at least one barrier layer composed of In x1 Al y1 Ga 1-x1-y1 N, wherein 0≦x1≦1, 0≦y1≦1 and x1+y1≦1, and at least one quantum well layer composed of In x2 Al y2 Ga 1-x2-y2 N, wherein 0≦x2≦1, 0≦y2≦1 and x2+y2≦1, the quantum well structure comprises a plurality of intermediate layers composed of In x Al 1-x N, wherein 0≦x≦0.6, the intermediate layers have a thickness of less than 1.5 nn and are distributed non-periodically in the quantum well structure, and the barrier layers and quantum well layers are interrupted in a vertical direction by the intermediate layers.
16. The optoelectronic device according to claim 1 , wherein the second period length is smaller than the first period length.