Pattern forming method
A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.
1. A pattern forming method comprising the steps of:
alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films;
forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and
selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting a fluorine-containing halogen gas with an inert gas, such that a ratio σ/t A of a standard deviation σ of etching depths of the respective polysilicon films in a side wall of the hole after the selective etching, with respect to an average t A of the etching depths, is in a range from 9% to 13%.
2. The pattern forming method according to claim 1 , wherein the fluorine-containing halogen gas comprises at least one gas selected from the group consisting of ClF 3 gas, BrF 5 gas, IF 3 gas, IF 7 gas, ClF gas, BrF 3 gas, IF 5 gas and BrF gas.
3. The pattern forming method according to claim 1 , wherein the selective etching step is performed in an atmospheric pressure environment.
4. The pattern forming method according to claim 1 , wherein the selective etching step is performed in a reduced pressure environment.
5. The pattern forming method according to claim 1 , wherein the selective etching step includes the step of rotating the substrate about a rotation axis perpendicular to a major surface of the substrate.
6. The pattern forming method according to claim 1 , wherein the selective etching step includes the step of controlling a temperature of the substrate.
7. The pattern forming method according to claim 6 , wherein the temperature of the substrate is controlled at not lower than −30° C. and not higher than 30° C. during the etching in the substrate temperature controlling step.
8. The pattern forming method according to claim 1 , wherein the insulative films each comprise an oxide film.