IP Library Granted Patent US 9,340,460
Granted Patent B2
US 9,340,460 · App. 14/241,948 · Granted May 17, 2016

Ultra-refractory material that is stable in a wet environment, and process for manufacturing same

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Quick Facts
Patent No.
US 9,340,460
App. No.
14/241,948
Granted
May 17, 2016
Kind
B2
Abstract

A refractory material withstanding high temperatures in an oxidizing medium contains at least hafnium boride and tantalum boride, hafnium and tantalum being present in the refractory material exclusively in compound form.

Claims (24)

1. A refractory material containing:

50% by volume HfB 2 ;

25% by volume HfC; and

25% by volume TaB 2 .

2. A refractory part, the part being wherein it is constituted by a refractory material according to claim 1 .

3. A part comprising a substrate made up of a determined material, said part being provided with a protective coating for providing protection, the part being wherein said protective coating is constituted by a refractory material according to claim 1 .

4. The part according to claim 3 , wherein the substrate is made of a monolithic ceramic material based on silicon carbide or of a monolithic material based on carbon, or of a ceramic matrix composite material comprising silicon carbide.

5. The part according to claim 3 , wherein the substrate is made of C/C composite material.

6. The part according to claim 5 , further comprising a layer of silicon carbide close to the C/C composite material of the substrate of said part and a layer of zirconium carbide or of hafnium carbide interposed between the silicon carbide layer and the protective coating.

7. A method of making a part out of refractory material, the method comprising:

making a composition containing:

50% by volume HfB 2 ;

25% by volume HfC;

25% by volume TaB 2 ; and

shaping the composition and densifying said composition.

8. A method of making a protective layer on a part comprising a substrate made of a determined material, said method comprising:

applying on the part a composition containing:

50% by volume HfB 2 ;

25% by volume HfC;

25% by volume TaB 2 ; and

densifying said composition.

9. The method according to claim 8 , wherein the substrate is made of monolithic ceramic material based on silicon carbide, or on monolithic material based on carbon, or of ceramic matrix composite material comprising silicon carbide.

10. The method according to claim 8 , wherein the substrate is made of C/C composite material.

11. The method according to claim 10 , further comprising forming a layer of silicon carbide close to the C/C composite material of the substrate of said part and forming a layer of zirconium carbide or of hafnium carbide interposed between the layer of silicon carbide and the protective layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2018
From: HERAKLES
To: ARIANEGROUP SAS
Reel/Frame 045151/0385 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2014
From: COURCOT MENDEZ, EMILIE; THEBAULT, JACQUES; SAUVEROCHE, ANNE
To: HERAKLES
Reel/Frame 033768/0444 →