Low distortion MOS attenuator
View Patent ↗An attenuation circuit uses a voltage controlled variable resistance transistor as a signal attenuator for receivers operating in the zero Hz to about 30 MHz range. The transistor functions in the linear region to linearize the transistor resistance characteristics used for signal attenuation. In an exemplary application, the attenuation circuit is used as an RF attenuator for AM radio broadcast receivers and amplifiers with automatic gain control. Multiple attenuation circuits can be coupled in parallel, each attenuation circuit having a different sized variable resistance transistor, to form sequentially activated stages that increase the range of attenuation while minimizing distortion.
1. An attenuation circuit comprising;
first through fourth MOS transistors, each having a source, a drain and a gate;
the first MOS transistor having its source and drain coupled between an AC signal being attenuated and a first reference voltage;
the second MOS transistor being coupled as a source follower to provide a voltage one V DS different than the AC signal being attenuated;
the third and fourth MOS transistors having their sources coupled through respective first and second resistors to a common node, the common node being coupled to a current source, the drains of the third and fourth MOS transistors being coupled through respective third and fourth resistors to a power supply,
the gate of the third MOS transistor being coupled to the source of the second MOS transistor;
the gate of the fourth MOS transistor being coupled to a bias voltage;
the drain of the fourth MOS transistor being coupled to the gate of the first MOS transistor.
2. The attenuation circuit of claim 1 wherein the first and second resistors are equal resistors, the third and fourth resistors are equal resistors, and wherein the first and second resistors have twice the resistance of the third and fourth resistors.
3. The attenuation circuit of claim 1 wherein the transistors are NMOS transistors.
4. The attenuation circuit of claim 3 wherein the second MOS transistor is coupled to provide a voltage one V DS below the AC signal being attenuated.
5. The attenuation circuit of claim 1 further comprised of a variable current source coupled to the gate of the first MOS transistor for varying an attenuation of the attenuation circuit responsive to the current source.
6. The attenuation circuit of claim 1 coupled as one of a cascade connection of a plurality of cascaded stages of the attenuation circuits.
7. The attenuation circuit of claim 6 the first transistor in each successive attenuation circuit is physically larger than the first transistor of an immediately prior attenuation circuit in the cascade connection of attenuation circuits.
8. An attenuation circuit comprising;
first through fourth NMOS transistors, each having a source, a drain and a gate;
the first NMOS transistor having its source and drain coupled between the AC signal being attenuated and a first reference voltage;
the second NMOS transistor being coupled as a source follower to provide a voltage one V DS below the AC signal being attenuated;
the third and fourth NMOS transistors having their sources coupled through respective first and second resistors to a common node, the common node being coupled to a current source, the drains of the third and fourth NMOS transistors being coupled through respective third and fourth resistors to a power supply,
the gate of the third NMOS transistor being coupled to the source of the second MOS transistor;
the gate of the fourth NMOS transistor being coupled to a bias voltage;
the drain of the fourth NMOS transistor being coupled to the gate of the first NMOS transistor; and
a variable current source coupled to the gate of the first NMOS transistor for varying an attenuation of the attenuation circuit responsive to the current source.
9. The attenuation circuit of claim 8 wherein the first and second resistors are equal resistors, the third and fourth resistors are equal resistors, and wherein the first and second resistors have twice the resistance of the third and fourth resistors.