Phase-change memory device having multiple diodes
View Patent ↗A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer.
1. A phase-change memory device, comprising:
a semiconductor substrate;
a metal word line formed on the semiconductor substrate;
a polysilicon layer of a first conductivity type being in contact with an upper portion of the metal word line; and
an auxiliary diode layer formed laterally and directly adjacent to outer sidewalls of the polysilicon layer to be in electrical contact with the metal word line and having a second conductivity type opposite to the first conductivity type.
2. A phase-change memory device, comprising:
a semiconductor substrate;
a metal word line formed on the semiconductor substrate;
a polysilicon layer of a first conductivity type being in contact with an upper portion of the metal word line; and
an auxiliary diode layer formed laterally and directly adjacent to outer sidewalls of the metal word line to be in electrical contact with the polysilicon layer and having a second conductivity type opposite to the first conductivity type.
3. A phase-change memory device, comprising:
a semiconductor substrate;
a metal word line formed on the semiconductor substrate;
a polysilicon layer of a first conductivity type being in contact with an upper portion of the metal word line; and
an auxiliary diode layer formed laterally and directly adjacent to outer sidewalls of the metal word line and the polysilicon layer and having a second conductivity type opposite to the first conductivity type.