Grid topography for patterned semiconductor coating that minimizes optical scatter and obscuration
A surveillance device includes an electronic component and a protective surface outwardly of the electronic component. A generally transparent substrate is formed from a first material. Spaced portions of an electrically conductive coating are formed within channels in the substrate. The electrically conductive material is a semiconductor material. A method is also disclosed.
1. An optical system comprising:
an electro-optical system and a protective optical element outwardly of said system, said protective optical element is a generally transparent substrate formed from a first material, and spaced portions of an electrically conductive coating formed within channels in said substrate, said electrically conductive material being a semiconductor material, wherein said electro-optical system is an image capture device.
2. The system as set forth in claim 1 , wherein said coating is provided in the substrate in a grid of crossing channels.
3. The system as set forth in claim 2 , wherein said semiconductor material can be an indium tin oxide material.
4. The system as set forth in claim 3 , wherein a depth of said electrically conductive coating is less than 20 microns.
5. The system as set forth in claim 4 , wherein an exterior face of the substrate and the exterior face of the coating are generally co-incident such that the two faces are spaced by less than a small fraction of a wavelength of visible light.
6. The system as set forth in claim 1 , wherein an exterior face of the substrate and an exterior face of the coating are generally co-incident such that the two faces are spaced by less than one micron.
7. The system as set forth in claim 1 , wherein said semiconductor material can be an indium tin oxide material.
8. The system as set forth in claim 1 , wherein a depth of said electrically conductive coating is less than 20 microns.
9. The system as set forth in claim 1 , wherein a ratio of the indices of refraction of the coating material and the first material at 1000 nm is between 0.8 and 1.25.
10. The system as set forth in claim 1 , wherein said channels have sides which extend to be non-parallel to a normal direction relative to an exterior face of said substrate, and with said angle being selected dependent upon an index of refraction of the substrate, and an incident ray angle of a beam approaching the substrate.
11. The optical system as set forth in claim 1 , wherein said image capture device is one of a camera, laser communication, or a targeting system.
12. A method of forming a protective surface to be positioned outwardly of an electronic component comprising the steps of:
providing a generally transparent substrate from a first material, and forming channels in said substrate; and
depositing an electrically conductive coating within the channels in said substrate, said electrically conductive material being a semiconductor material, and an exterior face of the substrate and an exterior face of the coating are generally formed to be co-incident such that the two faces are spaced by less than 1 micron.
13. The method as set forth in claim 12 , wherein said electrically conductive coating is provided in the substrate in a grid of crossing channels.
14. The method as set forth in claim 12 , wherein said semiconductor material is an indium tin oxide material.
15. The method as set forth in claim 12 , wherein a depth of said electrically conductive coating and said channel is less than 20 microns.
16. An optical system comprising:
an electro-optical system and a protective optical element outwardly of said system, said protective optical element is a generally transparent substrate formed from a first material, and spaced portions of an electrically conductive coating formed within channels in said substrate, said electrically conductive material being a semiconductor material, wherein an exterior face of the substrate and an exterior face of the coating are generally co-incident such that the two faces are spaced by less than one micron.