Semiconductor device having insulation layer with concave portion and semiconductor layer formed over concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
A lower insulation layer includes a concave portion that has a back surface on a first base member side, first to third surfaces which are opposed to the back surface, a fourth surface which is arranged between the first surface and the third surface, and a fifth surface which is arranged between the second surface and the third surface. A semiconductor layer is arranged on the first surface and the second surface. A gate electrode is arranged so as to be opposed to the semiconductor layer on at least the third surface, the fourth surface, and the fifth surface via a gate insulation layer.
1. A semiconductor device comprising:
a semiconductor layer which includes one of a source area and a drain area, the other of the source area and the drain area, and a channel area;
a gate insulation layer which covers the channel area;
a gate electrode which is disposed so as to be opposed to the channel area via the gate insulation layer;
a first electrode which is one of a source electrode and a drain electrode; and
a second electrode which is the other of the source electrode and the drain electrode, wherein:
the one of the source area and the drain area is disposed so as to cover a first surface of a first insulation layer,
the other of the source area and the drain area is disposed so as to cover a second surface of the first insulation layer,
the channel area is disposed so as to cover a third surface of the first insulation layer,
the first insulation layer includes a fourth surface between the first surface and the third surface, and a fifth surface between the second surface and the third surface,
there is a gap between the first surface and the third surface,
the first electrode is disposed in a first contact hole which is disposed so as to penetrate the gate insulation layer and a second insulation layer which covers the semiconductor layer and the gate electrode, and
the second electrode is disposed in a second contact hole which is disposed so as to penetrate the gate insulation layer and the second insulation layer.
2. The semiconductor device according to claim 1 ,
wherein the first insulation layer includes a sixth surface which opposes the first surface, a seventh surface which opposes the second surface, an eighth surface which opposes the third surface, a ninth surface which opposes the fourth surface, and a tenth surface which opposes the fifth surface.
3. An electro-optical device comprising:
the semiconductor device according to claim 2 ;
a substrate;
a plurality of scan lines; and
a plurality of data lines which are arranged so as to intersect each of the plurality of scan lines,
wherein:
the semiconductor device is electrically connected to any one of the plurality of scan lines and any one of the plurality of data lines,
the substrate includes an eleventh surface which opposes the sixth surface, a twelfth surface which opposes the seventh surface, a thirteenth surface which opposes the eighth surface, a fourteenth surface which opposes the ninth surface, and a fifteenth surface which opposes the tenth surface, and
the scan line is arranged between the substrate and the semiconductor device.
4. An electro-optical device comprising:
an element substrate which includes the semiconductor device according to claim 1 and a pixel electrode which is electrically connected to the semiconductor device;
an opposing substrate which is disposed so as to be opposed to the element substrate; and
an electro-optical layer which is interposed between the element substrate and the opposing substrate.
5. The electro-optical device according to claim 4 ,
wherein a direction from one of a source area and a drain area towards the other of the source area and the drain area is along a direction in which a scan line is extended.
6. An electronic apparatus comprising:
the electro-optical device according to claim 5 .
7. An electronic apparatus comprising:
the electro-optical device according to claim 4 .
8. An electro-optical device comprising:
a semiconductor device comprising:
a semiconductor layer which includes one of a source area and a drain area, the other of the source area and the drain area, and a channel area;
a gate insulation layer which covers the channel area;
a gate electrode which is disposed so as to be opposed to the channel area via the gate insulation layer;
a first electrode which is one of a source electrode and a drain electrode; and
a second electrode which is the other of the source electrode and the drain electrode,
a substrate;
a plurality of scan lines; and
a plurality of data lines which are arranged so as to intersect each of the plurality of scan lines,
wherein:
the one of the source area and the drain area is disposed so as to cover a first surface of a first insulation layer,
the other of the source area and the drain area is disposed so as to cover a second surface of the first insulation layer,
the channel area is disposed so as to cover a third surface of the first insulation layer,
the first insulation layer includes a fourth surface between the first surface and the third surface, and a fifth surface between the second surface and the third surface,
there is a gap between the first surface and the third surface,
the first insulation layer includes a sixth surface which opposes the first surface, a seventh surface which opposes the second surface, an eighth surface which opposes the third surface, a ninth surface which opposes the fourth surface, and a tenth surface which opposes the fifth surface,
the semiconductor device is electrically connected to any one of the plurality of scan lines and any one of the plurality of data lines,
the substrate includes an eleventh surface which opposes the sixth surface, a twelfth surface which opposes the seventh surface, a thirteenth surface which opposes the eighth surface, a fourteenth surface which opposes the ninth surface, and a fifteenth surface which opposes the tenth surface, and
the scan line is arranged between the substrate and the semiconductor device.
9. An electro-optical device comprising:
an element substrate which includes the semiconductor device according to claim 8 and a pixel electrode which is electrically connected to the semiconductor device;
an opposing substrate which is disposed so as to be opposed to the element substrate; and
an electro-optical layer which is interposed between the element substrate and the opposing substrate.
10. The electro-optical device according to claim 8 ,
wherein a direction from one of a source area and a drain area towards the other of the source area and the drain area is along a direction in which a scan line is extended.
11. An electronic apparatus comprising:
the electro-optical device according to claim 8 .
12. An electro-optical device comprising:
an element substrate which includes a semiconductor device comprising:
a semiconductor layer which includes one of a source area and a drain area, the other of the source area and the drain area, and a channel area;
a gate insulation layer which covers the channel area;
a gate electrode which is disposed so as to be opposed to the channel area via the gate insulation layer;
a first electrode which is one of a source electrode and a drain electrode; and
a second electrode which is the other of the source electrode and the drain electrode;
a pixel electrode which is electrically connected to the semiconductor device;
an opposing substrate which is disposed so as to be opposed to the element substrate; and
an electro-optical layer which is interposed between the element substrate and the opposing substrate,
wherein:
the one of the source area and the drain area is disposed so as to cover a first surface of a first insulation layer,
the other of the source area and the drain area is disposed so as to cover a second surface of the first insulation layer,
the channel area is disposed so as to cover a third surface of the first insulation layer,
the first insulation layer includes a fourth surface between the first surface and the third surface, and a fifth surface between the second surface and the third surface, and
there is a gap between the first surface and the third surface.
13. The electro-optical device according to claim 12 ,
wherein a direction from one of a source area and a drain area towards the other of the source area and the drain area is along a direction in which a scan line is extended.
14. An electronic apparatus comprising:
the electro-optical device according to claim 12 .