Semiconductor device, method of manufacturing the same, and signal transmitting/receiving method using the semiconductor device

1. A semiconductor device, comprising:

a semiconductor chip comprising a main surface;

an internal circuit including a plurality of transistors, formed on said main surface;

a bonding pad electrically connected to said internal circuit, formed on said main surface;

an inductor for communicating an external device in a non-contact manner, formed on said main surface;

a seal ring formed along an outer peripheral edge of said semiconductor chip to surround said internal circuit and said bonding pad in a plan view,

wherein said inductor has a configuration to surround said internal circuit and said bonding pad in the plan view and along said seal ring, and

wherein said inductor is arranged outside said seal ring;

a signal transmitter which transmits a signal to an outside of the semiconductor device, and transmits another signal to the internal circuit through a wire that extends from the signal transmitter to the internal circuit to electrically connect the signal transmitter to the internal circuit; and

a substrate including a semiconductor chip formation region,

wherein the internal circuit is provided within the semiconductor chip formation region of the substrate,

wherein the signal transmitter is provided within the semiconductor chip formation region of the semiconductor substrate,

wherein the inductor comprises a power receiving inductor provided along an outer edge of the semiconductor chip formation region of the substrate to surround the internal circuit and the signal transmitter,

wherein the signal transmitter comprises a plurality of signal transmitting/receiving inductors, and

wherein the plurality of transistors correspond to the plurality of signal transmitting/receiving inductors.

2. The semiconductor device according to claim 1 , further comprising:

a conversion circuit which is provided in the semiconductor chip formation region of the substrate,

wherein gates of the transistors are connected to the signal transmitting/receiving inductors through the conversion circuit.

3. The semiconductor device according to claim 2 , wherein the conversion circuit demodulates an electrical signal converted by the signal transmitter, and supplies the demodulated electrical signal to the internal circuit.

4. The semiconductor device according to claim 3 , wherein the conversion circuit modulates the electrical signal that is supplied from the internal circuit, and supplies the modulated electrical signal to the signal transmitter.

5. The semiconductor device according to claim 4 , wherein the signal transmitter outputs the modulated electrical signal as a radio wave to a corresponding one of the signal transmitting/receiving inductors placed in said outside.

6. The semiconductor device according to claim 1 , further comprising:

a power supply circuit, said inductor being connected to said internal circuit through said power supply circuit.

7. The semiconductor device according to claim 1 , wherein said inductor is electrically connected to an input of circuit of said internal circuit, and

wherein said bonding pad is electrically connected to an output circuit of said internal circuit.

8. The semiconductor device according to claim 1 , wherein the inductor is disposed in an outermost area of the semiconductor chip.

9. The semiconductor device according to claim 1 , wherein the signal transmitter transmits the signal to the outside by one of an electromagnetic induction and a capacitive coupling.

10. The semiconductor device according to claim 1 , wherein the inductor receives a power supply signal from the external device, and is electrically connected to the internal circuit.

11. The semiconductor device according to claim 10 , wherein said signal transmitter transmits said signal to the outside independent of the inductor.