IP Library Granted Patent US 9,287,560
Granted Patent B2
US 9,287,560 · App. 14/255,418 · Granted Mar 15, 2016

Silicon-embedded copper nanostructure network for high energy storage

Inventor: Tianyue Yu (Sunnyvale, CA)
Assignee: Amprius, Inc.
H01M4/366H01M4/134H01M4/38H01M4/386H01M2004/021
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Quick Facts
Patent No.
US 9,287,560
App. No.
14/255,418
Granted
Mar 15, 2016
Kind
B2
Abstract

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Claims (29)

1. A structure comprising:

a plurality of nanostructures of a first type; and

a plurality of nanostructures of a second type combined with the plurality of nanostructures of the first type,

wherein at least a portion of the nanostructures of the second type is growth rooted on at least some of the nanostructures of the first type, wherein the nanostructures of the second type comprise a plurality of metal-containing electronically conductive nanostructures and wherein ones of the plurality metal-containing electronically conductive nanostructures directly contact others of the plurality of metal-containing electronically conductive nanostructures.

2. The structure of claim 1 , wherein the nanostructures of the first type comprise an electrochemically active material.

3. The structure of claim 2 , wherein the electrochemically active material is selected from the group consisting of silicon, silicon oxides, silicides, germanium, and tin.

4. The structure of claim 1 , wherein the metal-containing electronically conductive nanostructures comprise a material is selected from the group consisting of copper, silver, gold, palladium, nickel, platinum, and alloys thereof.

5. The structure of claim 1 , wherein the structure has a porosity between about 20% and 80%.

6. An electrode for a lithium battery comprising:

a substrate in electronic communication with a structure comprising:

a plurality of nanostructures of a first type; and

a plurality of nanostructures of a second type combined with the plurality of nanostructures of the first type,

wherein the nanostructures of the second type comprise a plurality of metal nanowires and the nanostructures of the first type comprise an electrochemically active material.

7. A lithium battery comprising:

a first electrode;

a second electrode opposite in electrochemical function to the first electrode, wherein the second electrode is as described in claim 6 ; and

an electrolyte in ionic communication with both the first electrode and the second electrode.

8. An electrode for a lithium battery comprising:

a structure comprising:

a conductive network of metal nanostructures; and

a plurality of high capacity active material nanostructures embedded in the conductive network and in electronic communication with the conductive network, wherein the smallest dimension of the high capacity active material nanostructures is at least an order of magnitude greater than that of the metal nanostructures.

9. The electrode of claim 8 , further comprising a conductive surface coating at least around metal nanostructure-high capacity active material nanostructure interfaces.

10. The electrode of claim 8 , wherein the metal nanostructures are copper, silver, gold, palladium, nickel, platinum, or alloys thereof.

11. The electrode of claim 8 , wherein the structure has a porosity between 20% and 80%.

12. The electrode of claim 8 , wherein the structure is not attached to a current collector substrate.

13. The electrode of claim 8 , further comprising a current collector substrate attached to the structure.

14. The electrode of claim 8 , wherein the conductive network of metal nanostructures comprises interconnected metal nanowires.

15. The electrode of claim 1 , wherein the nanostructures of the second type comprise interconnected metal nanowires.

16. The electrode of claim 6 , wherein the nanostructures of the second type comprise interconnected metal nanowires.

Assignments (4)
CONFIRMATORY ASSIGNMENT Recorded Feb 9, 2024
From: AMPRIUS, INC.
To: AMPRIUS TECHNOLOGIES, INC.
Reel/Frame 066548/0229 →
CONFIRMATORY ASSIGNMENT Recorded Jun 15, 2022
From: AMPRIUS, INC.
To: AMPRIUS TECHNOLOGIES, INC.
Reel/Frame 060455/0620 →
SECURITY INTEREST Recorded Dec 18, 2017
From: AMPRIUS, INC.
To: SILICON VALLEY BANK
Reel/Frame 044421/0318 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2014
From: YU, TIANYUE
To: AMPRIUS, INC.
Reel/Frame 033122/0653 →
Continuity (2)
Provisional Application 61813175 · Apr 17, 2013
Related Publication 20160028075A1 · Jan 28, 2016