Power semiconductor module and power semiconductor module assembly with multiple power semiconductor modules

1. A power semiconductor module comprising:

an electrically conducting base plate;

an electrically conducting top plate, which is arranged in parallel to the base plate and spaced apart from the base plate;

at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate;

at least one presspin, which is arranged in the space formed between the base plate and the top plate and configured to provide contact between the at least one power semiconductor device and the top plate; and

a metallic protection plate provided at an inner face of the top plate facing towards the base plate, wherein a material of the protection plate has a melting temperature higher than a melting temperature of the top plate.

2. The power semiconductor module according to claim 1 , wherein the material of the protection plate comprises:

molybdenum.

3. The power semiconductor module according to claim 1 , wherein the material of the protection plate is an alloy comprising:

molybdenum and copper.

4. The power semiconductor module according to claim 1 , wherein the material of the protection plate comprises:

tungsten.

5. The power semiconductor module according to claim 1 , wherein the protection plate is configured to cover a surface of the top plate in an area of a head of the at least one presspin.

6. The power semiconductor module according to claim 1 , comprising:

at least one gap in the protection plate, which is configured to surround a head of the at least one presspin.

7. The power semiconductor module according to claim 1 , wherein the protection plate is configured to be integral with a head of the at least one presspin.

8. The power semiconductor module according to claim 7 , wherein the least one presspin comprises:

a shaft fixed to the head; and

a foot movable along the shaft of the at least one presspin.

9. The power semiconductor module according to claim 1 , wherein the at least one power semiconductor device is one of an insulated gate bipolar transistor, a reverse conducting insulated gate bipolar transistor, a bi-mode insulated gate transistor, or a diode.

10. The power semiconductor module according to claim 1 , comprising:

a housing, wherein the top plate is configured to form a top side of the housing and provide a first contact of the power semiconductor module, and the base plate is configured to form a base of the housing and provide a second contact of the power semiconductor module.

11. The power semiconductor module according to claim 1 , configured to provide a short circuit failure mode, which is supported by the power semiconductor module.

12. A power semiconductor module assembly, having a plurality of power semiconductor modules, each of the plurality of power semiconductor comprising:

an electrically conducting base plate;

an electrically conducting top plate, which is arranged in parallel to the base plate and spaced apart from the base plate;

at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate;

at least one presspin, which is arranged in the space formed between the base plate and the top plate, and configured to provide contact between the at least one power semiconductor device and the top plate; and

a metallic protection plate provided at an inner face of the top plate facing towards the base plate, wherein a material of the protection plate has a melting temperature higher than a melting temperature of the top plate; and

wherein the plurality of power semiconductor modules are arranged side by side to each other with electric connections between adjacent power semiconductor modules.

13. The power semiconductor module assembly according to claim 12 , wherein the base plates of the power semiconductor modules are configured to be electrically connected to each other.

14. The power semiconductor module assembly according to claim 13 , comprising:

a housing including an electrically conducting lid, which is configured to form a top side of the housing and provide a first contact of the power semiconductor module assembly, which is in contact with the first contacts of the power semiconductor modules, and the base plates of the power semiconductor modules are configured to extend through a base of the housing.

15. The power semiconductor module assembly according to claim 12 , wherein the material of the each of the protection plates comprises:

one of molybdenum, an alloy containing molybdenum and copper, or tungsten.

16. The power semiconductor module assembly according to claim 12 , wherein each of the protection plates is configured to cover a surface of the top plate in an area of a head of the at least one presspin of the semiconductor module.

17. The power semiconductor module assembly according to claim 12 , comprising:

at least one gap in each protection plate, which is configured to surround a head of the at least one presspin of the semiconductor module.

18. The power semiconductor module assembly according to claim 12 , wherein each protection plate is configured to be integral with a head of the at least one presspin of the semiconductor module.

19. The power semiconductor module assembly according to claim 18 , wherein each presspin comprises:

a shaft fixed to the head and a foot movable along the shaft of the at least one presspin.

20. The power semiconductor module assembly according to claim 12 , wherein power semiconductor device is one of an insulated gate bipolar transistor, a reverse conducting insulated gate bipolar transistor, a bi-mode insulated gate transistor, or a diode.