Current switching device with IGCT
An exemplary current switching device includes an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage. The gate unit and a connection of the gate unit to the gate establish a gate circuit having a stray impedance. The gate unit is adapted for generating a spiked switch-off voltage with a maximum above a breakdown voltage (VGR MAX ) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGR MAX ) due to the stray impedance of the gate circuit.
1. A current switching device, comprising:
an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and
a gate unit for generating the switch-off voltage, wherein the gate unit and a connection to the gate establishes a gate circuit having a stray impedance,
wherein the gate unit is configured for generating the switch-off voltage, which comprises a constant switch-off voltage and a spiked switch-off voltage, wherein the spiked switch-off voltage has a spike width smaller than 30 microseconds, with a maximum voltage above a breakdown voltage (VGR MAX ) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGR MAX ) due to the stray impedance of the gate circuit,
wherein the spiked switch-off voltage is generated in a first channel of the gate unit,
wherein the gate unit includes a second channel configured for generating a constant switch-off voltage after the spiked switch-off voltage has been generated, the constant switch-off voltage being lower than the breakdown voltage (VGR Max ) between the cathode and the gate.
2. The current switching device of claim 1 , wherein the maximum voltage of the spiked switch-off voltage is at least twice the breakdown voltage (VGR Max ).
3. The current switching device of claim 1 , wherein the gate unit includes a voltage generator for generating the spiked switch-off voltage with a fixed pattern.
4. The current switching device of claim 3 , further comprising:
a gate current sensor for measuring a gate current at the gate of the thyristor,
wherein the gate unit includes a voltage regulator for regulating the spiked switch-off voltage based on the measured gate current.
5. The current switching device of claim 3 , wherein the gate unit includes an internal voltage source for providing a voltage higher than the breakdown voltage (VGR MAX ), the internal voltage source being supplied by an input voltage of the gate unit that is lower than the maximum voltage of the spiked switch-off voltage.
6. The current switching device of claim 5 , wherein the voltage source includes a capacitance to be charged in times between an output of spiked switch-off voltages.
7. The current switching device of claim 1 , further comprising:
a gate current sensor for measuring a gate current at the gate of the thyristor,
wherein the gate unit includes a voltage regulator for regulating the spiked switch-off voltage based on the measured gate current.
8. The current switching device of claim 7 , wherein the voltage regulator is configured for regulating the spiked switch-off voltage based on the time dependency of the measured gate current.
9. The current switching device of claim 1 , wherein the gate unit includes an internal voltage source for providing a voltage higher than the breakdown voltage (VGR MAX ), the internal voltage source being supplied by an input voltage of the gate unit that is lower than the maximum voltage of the spiked switch-off voltage.
10. The current switching device of claim 9 , wherein the voltage source includes a capacitance to be charged in times between an output of spiked switch-off voltages.
11. A medium voltage inverter comprising a plurality of current switching devices according to claim 1 .
12. A method for switching an integrated gate-commuted thyristor, the method comprising:
receiving a switch-off signal for the thyristor in a gate unit;
generating a switch-off voltage, which comprises a constant switch-off voltage and a spiked switch-off voltage, wherein the spiked switch-off voltage has a maximum voltage above a breakdown voltage (VGR MAX ) between a cathode and a gate of the thyristor; and
applying the spiked switch-off voltage via a gate circuit to the gate of the thyristor, the gate circuit being established by the gate unit and a connection to the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGR MAX ) due to a stray impedance of the gate circuit, and
generating a constant switch-off voltage that is lower than the breakdown voltage (VGR MAX ) between the cathode and the gate subsequent to the application of the spiked switch-off voltage.
13. The method of claim 12 , further comprising:
generating the spiked switch-off voltage with a fixed pattern.
14. The method of claim 12 , further comprising:
measuring a gate current at the gate of the thyristor; and
regulating the spiked switch-off voltage based on the measured gate current.
15. The method of claim 14 , further comprising:
generating a constant switch-off voltage that is lower than the breakdown voltage (VGR MAX ) between the cathode and the gate subsequent to the application of the spiked switch-off voltage.