Capacitive imaging device with active pixels and method
View Patent ↗A capacitive image sensor includes a sensor array having capacitive image pixels. Each pixel has a two-transistor configuration including a pixel selection transistor and a source follower transistor. The pixel selection transistor activates the source follower transistor. The source follower is coupled to a variable capacitance that affects an input impedance of the source follower. An AC current is source is used to interrogate the activated source follower to determine an output impedance of the source follower. The output impedance is a function of the input impedance and the output impedance is representative of the nearness of an object.
1. A capacitive image pixel, comprising:
a two-transistor configuration, comprising:
a source follower transistor having an input impedance and an output impedance that is a function of the input impedance, and
a pixel selection transistor arranged to activate the source follower transistor; and
an insulator layer arranged with respect to the source follower transistor so that an object contacting or near the insulator layer provides a variable capacitance that affects the input impedance of the source follower transistor,
wherein the source follower transistor is configured to be interrogated by an AC current source to determine the output impedance of the source follower, the output impedance of the source follower representative of a nearness of the object.
2. The capacitive image pixel of claim 1 , wherein the variable capacitance varies in accordance with the nearness of the object, wherein the object is affective in altering capacitance.
3. The capacitive image pixel of claim 1 , further comprising a DC current source.
4. The capacitive image pixel of claim 3 , wherein the DC current source sets a working bias point.
5. The capacitive image pixel of claim 1 , wherein the AC current source provides a known amplitude and frequency.
6. The capacitive image pixel of claim 1 , wherein the capacitive image pixel is implemented with thin film technology.
7. The capacitive image pixel of claim 1 , wherein the AC current source provides a sinusoidal signal or a square-wave signal.
8. A capacitive image sensor, comprising:
a sensor array comprising a plurality of active pixels, each active pixel in the sensor array comprising a two-transistor (2T) configuration, comprising:
a source follower transistor having an input impedance and an output impedance that is a function of the input impedance; and
a pixel selection transistor arranged to activate the source follower transistor; and
an insulator layer arranged with respect to the source follower transistor so that an object contacting or near the insulator layer provides a variable capacitance that affects the input impedance of the source follower transistor,
wherein the source follower transistor is configured to be interrogated by an AC current source to determine the output impedance of the source follower, the output impedance of the source follower representative of a nearness of the object.
9. The capacitive image sensor of claim 8 , wherein the source follower transistor is coupled to the variable capacitance affecting an input impedance of the source follower.
10. The capacitive image sensor of claim 9 , further comprising a DC current source.
11. The capacitive image sensor of claim 10 , wherein the DC current source sets a working bias point.
12. The capacitive image sensor of claim 9 , wherein the AC current source provides a known amplitude and frequency.
13. The capacitive image sensor of claim 8 , wherein the capacitive image sensor is implemented with thin film technology.
14. The capacitive image sensor of claim 9 , wherein the AC current source provides a sinusoidal signal or a square-wave signal.
15. The capacitive image sensor of claim 8 , wherein the sensor array provides a resolution of 1000 ppi.
16. A method to obtain an impedance readout from a capacitive image pixel having only two transistors comprising a pixel selection transistor and a source follower transistor, the source follower transistor arranged with respect to an insulator layer so that an object contacting or near the insulator layer provides a variable capacitance that affects an input impedance of the source follower transistor, comprising:
activating the source follower transistor with the pixel selection transistor;
interrogating the source follower transistor by applying an AC current source to the source follower transistor; and
determining an output impedance of the source follower transistor based on the interrogation, wherein the output impedance is a function of the input impedance and wherein the output impedance is representative of a nearness of an object that is capable of affecting the variable capacitance.
17. The method of claim 16 , further comprising measuring a voltage output of the source follower transistor.
18. The method of claim 17 , wherein the measured voltage output correlates to the output impedance.
19. The method of claim 16 , wherein the AC current source provides a known amplitude and frequency.
20. The method of claim 19 , wherein the AC current source provides a sinusoidal signal or a square-wave signal.