Solid-state image sensing device and method of manufacturing the same
By selectively anisotropically etching a stack film formed to cover a plurality of photodiodes and a gate electrode layer of a MOS transistor, the stack film remains on each of the plurality of photodiodes to form a lower antireflection coating and the stack film remains on a sidewall of the gate electrode layer to form a sidewall. Using the gate electrode layer and the sidewall as a mask, an impurity is introduced to form a source/drain region of the MOS transistor. After the impurity was introduced, an upper antireflection coating is formed at least on a lower antireflection coating. At least any of the upper antireflection coating fAh and the lower antireflection coating is etched such that the antireflection coatings on the two respective photodiodes are different in thickness from each other.
1. A solid-state image sensing device having a first pixel and a second pixel for sensing images of light of colors different from each other, comprising:
a first photoelectric conversion portion corresponding to said first pixel;
a second photoelectric conversion portion corresponding to said second pixel;
an insulating gate field effect transistor portion having a gate electrode layer;
two first films formed on said first and second photoelectric conversion portions respectively; and
a sidewall insulating film formed on a sidewall of said gate electrode layer, wherein:
a first film, among said two first films, formed on said first photoelectric conversion portion and a second film, among said two first films, formed on said second photoelectric conversion portion have structures different from each other, and
said first film formed on said first photoelectric conversion portion includes a lower film and an upper film located on said lower film and covering an end surface of a pattern of said lower film, and
said sidewall insulating film being implemented by said lower film.
2. The solid-state image sensing device according to claim 1 , wherein
said first film formed on said first photoelectric conversion portion has a thickness greater than a width of said sidewall insulating film.