High-resolution readout of analog memory cells
A method includes storing data in an analog memory cell by writing an analog value into the memory cell. After storing the data, the data stored in the memory cell is read by discharging electrical current to flow through the memory cell, during a predefined time interval, while applying a variable voltage to a gate of the memory cell. A fraction of the predefined time interval, during which the variable voltage allows the electrical current to flow through the memory cell, is estimated. The stored data is estimated based on the estimated fraction.
1. A method for operating a memory, wherein the memory includes a plurality of memory cells, the method comprising:
charging a bit line coupled to a selected one of the plurality of memory cells to a predetermined voltage;
discharging the bit line through the selected one of the plurality of memory cells;
estimating data stored in the selected one of the plurality of memory cells dependent upon a current resulting from the discharging of the bit line.
2. The method of claim 1 , wherein discharging the bit line through the selected one of the plurality of memory cells comprises applying a variable voltage level to a gate of the selected one of the plurality of memory cells.
3. The method of claim 2 , wherein applying the variable voltage level to the gate of the selected one of the plurality of memory cells comprises apply the variable voltage level to the gate of the selected one of the plurality of memory cells over a predetermine period of time.
4. The method of claim 3 , wherein estimating the data stored in the selected one of the plurality of memory cells comprises estimating a portion of the predetermined period of time during which current flows through the selected one of the plurality of memory cells.
5. The method of claim 1 , wherein discharging the bit line through the selected one of the plurality of memory cells comprises charging a capacitance, wherein the capacitance is coupled in series with the selected one of the plurality of memory cells.
6. The method of claim 5 , wherein the capacitance includes a self capacitance of the bit line.
7. An apparatus, comprising:
a plurality of memory cells; and
circuitry coupled to the plurality of memory cells, wherein the circuitry is configured to:
charge a bit line coupled to a selected one of the plurality of memory cells to a predetermined voltage;
discharge the bit line through the selected one of the plurality of memory cells;
estimate data stored in the selected one of the plurality of memory cells dependent upon a current resulting from the discharging of the bit line.
8. The apparatus of claim 7 , wherein to discharge the bit line through the selected one of the plurality of memory cells, the circuitry is further configured to apply a variable voltage level to a gate of the selected one of the plurality of memory cells.
9. The apparatus of claim 8 , wherein to apply the variable voltage level to the gate of the selected one of the plurality of memory cells, the circuitry is further configured to apply the variable voltage level to the gate of the selected one of the plurality of memory cells over a predetermine period of time.
10. The apparatus of claim 9 , wherein to estimate the data stored in the selected one of the plurality of memory cells, the circuitry is further configured to estimate a portion of the predetermined period of time during which current flows through the selected one of the plurality of memory cells.
11. The apparatus of claim 7 , wherein the circuitry includes a capacitance coupled in series with the selected one of the plurality of memory cells, and wherein to discharge the bit line through the selected one of the plurality of memory cells the circuitry is further configured to charge the capacitance dependent upon the current.
12. The apparatus of claim 11 , wherein the capacitance includes a self capacitance of the bit line.
13. The apparatus of claim 11 , wherein the capacitance includes a capacitor coupled in series with the selected one of the plurality of memory cells.
14. A memory, comprising:
a plurality of memory cells;
circuitry coupled to the plurality of memory cells, wherein the circuitry is configured to:
charge a bit line coupled to a selected one of the plurality of memory cells to a predetermined voltage;
discharge the bit line through the selected one of the plurality of memory cells; and
an analog-to-digital converter (ADC) configured to estimate data stored in the selected one of the plurality of memory cells dependent upon a current resulting from the discharging of the bit line.
15. The system of claim 14 , wherein to discharge the bit line through the selected one of the plurality of memory cells, the circuitry is further configured to apply a variable voltage level to a gate of the selected one of the plurality of memory cells.
16. The system of claim 15 , wherein to apply the variable voltage level to the gate of the selected one of the plurality of memory cells, the circuitry is further configured to apply the variable voltage level to the gate of the selected one of the plurality of memory cells over a predetermine period of time.
17. The system of claim 16 , wherein to estimate the data stored in the selected one of the plurality of memory cells, the ADC is further configured to estimate a portion of the predetermined period of time during which current flows through the selected one of the plurality of memory cells.
18. The system of claim 14 , wherein the circuitry includes a capacitance coupled in series with the selected one of the plurality of memory cells, and wherein to discharge the bit line through the selected one of the plurality of memory cells the circuitry is further configured to charge the capacitance dependent upon the current.
19. The system of claim 18 , wherein the capacitance includes a self capacitance of the bit line.
20. The system of claim 18 , wherein the capacitance includes a capacitor coupled in series with the selected one of the plurality of memory cells.