Solar cell metallization
An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M 1 ) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M 2 ) layer is connected to the first level metal (M 1 ) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M 2 ). The substantially parallel interdigitated metallization of M 1 collects carriers of opposite polarity of the corresponding busbar.
1. An interdigitated back contact solar cell comprising:
a single solar cell substrate having a light receiving frontside and a backside, said backside comprising base and emitter regions;
a first level metal (M 1 ) disposed on said substrate backside contacting said base and emitter regions, M 1 comprising:
a first interdigitated metallization of base and emitter fingers,
a second interdigitated metallization of metallization of base and emitter fingers,
and a third interdigitated metallization of metallization of base and emitter fingers,
the second interdigitated metallization and third interdigitated metallization each being perpendicular to the first interdigitated metallization,
the second interdigitated metallization and third interdigitated metallization each being parallel to each other;
a second level metal (M 2 ) disposed above on M 1 , M 2 comprising:
a fourth interdigitated metallization of base and emitter fingers,
a base bus bar,
and an emitter busbar,
the base busbar and emitter busbar being parallel to each other,
the base busbar and emitter busbar each being perpendicular to the M 2 interdigitated metallization;
wherein the fourth interdigitated metallization of M 2 is directly above the first interdigitated metallization of M 1 , and perpendicular to the first interdigitated metallization of M 1 ,
wherein the base busbar of M 2 is directly above the second interdigitated metallization of M 1 , is perpendicular to the second interdigitated metallization of M 1 , and parallel to the first interdigitated metallization of M 1 ,
wherein the emitter busbar of M 2 is directly above the third interdigitated metallization of M 1 , is perpendicular to the second interdigitated metallization of M 1 , and parallel to the first interdigitated metallization of M 1 .
2. The interdigitated back contact solar cell of claim 1 , wherein said second level metal is recessed with respect to the periphery of the solar cell.
3. The interdigitated back contact solar cell of claim 1 , wherein said second interdigitated metallization is patterned with uniformly linear and parallel interdigitated base and emitter metallization.
4. The interdigitated back contact solar cell of claim 1 , wherein said second interdigitated metallization is patterned with parallel interdigitated base and emitter metallization having fingers extending orthogonally therefrom.
5. The interdigitated back contact solar cell of claim 1 , wherein said single solar cell substrate further comprises a plurality of trench isolated sub-cells, each of said sub-cells comprising:
a first level metal (M 1 ) on said substrate backside contacting said base and emitter regions, M 1 comprising:
a first interdigitated metallization of base and emitter fingers,
a second interdigitated metallization of metallization of base and emitter fingers,
and a third interdigitated metallization of metallization of base and emitter fingers,
the second metallization and third interdigitated metallization each being perpendicular to the first interdigitated metallization,
the second metallization and third interdigitated metallization each being parallel to each other;
a second level metal (M 2 ) disposed above of M 1 , in plan view of the solar cell substrate backside, M 2 comprising:
a fourth interdigitated metallization of base and emitter fingers,
a base busbar,
and an emitter busbar,
the base busbar and emitter busbar being parallel to each other,
the base busbar and emitter busbar each being perpendicular to the M 2 interdigitated metallization;
wherein the fourth interdigitated metallization of M 2 is directly above the first interdigitated metallization of M 1 , in plan view of the solar cell substrate backside, and perpendicular to the first interdigitated metallization of M 1 ,
wherein the base busbar of M 2 is directly above the second interdigitated metallization of M 1 , in plan view of the solar cell substrate backside, and is perpendicular to the second interdigitated metallization of M 1 , and parallel to the first interdigitated metallization of M 1 ,
wherein the emitter busbar of M 2 is directly above the third interdigitated metallization of M 1 , in plan view of the solar cell substrate backside, and is perpendicular to the second interdigitated metallization of M 1 , and parallel to the first interdigitated metallization of M 1 .
6. The interdigitated back contact solar cell of claim 1 , further comprising an insulating backplane between said first level metal (M 1 ) and said second level metal (M 2 ).
7. The interdigitated back contact solar cell of claim 6 , wherein said insulating backplane is a thin prepreg sheet.