Laser based display method and system
View Patent ↗The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well.
1. A method of using a projection system comprising:
providing the projection system, comprising:
an interface for receiving images or video signal;
a light source including a plurality of edge emitting laser diodes, the plurality of edge emitting laser diodes including a first edge emitting laser diode, the first edge emitting laser diode being non-polar or semi-polar or polar and fabricated from gallium nitride material;
a power source electrically coupled to the light source; and
one or more LCOS (Liquid Crystal on Silicon) chips; and
operating the projection system.
2. The method of claim 1 wherein the plurality of edge emitting laser diodes comprises the first edge emitting laser diode, a second edge emitting laser diode, and a third edge emitting laser diode.
3. The method of claim 2 wherein the first edge emitting laser diode is a green edge emitting laser diode operable in the 490-540 nm wavelength range and characterized by the semipolar {20-21} orientation.
4. The method of claim 3 wherein the green edge emitting laser diode is characterized by the semipolar {20-21} orientation and comprises a stripe region characterized by a cavity orientation substantially in a projection of a c-direction.
5. The method of claim 2 where the second edge emitting laser diode is a green edge emitting laser diode operable in the 490-540 nm wavelength range and characterized by a polar c-plane orientation.
6. The method of claim 2 wherein the second edge emitting laser diode is a blue edge emitting laser diode operable in the 430-480 nm wavelength range and characterized by a polar c-plane orientation.
7. The method of claim 2 wherein the first edge emitting laser diode is a blue edge emitting laser diode operable in the 430-480 nm wavelength range and characterized by a nonpolar or semipolar orientation.
8. The method of claim 2 wherein the third edge emitting laser diode is a red edge emitting laser diode comprises of GaAlInP material.
9. The method of claim 2 wherein the first edge emitting laser diode, the second edge emitting laser, and the third edge emitting laser diode share a first mounting surface.
10. A projection system comprising:
an interface for receiving images or video signal;
a light source including a plurality of edge emitting laser diodes, the plurality of edge emitting laser diodes including a first edge emitting laser diode, the first edge emitting laser diode being non-polar or semi-polar or polar and fabricated from gallium nitride material;
a power source electrically coupled to the light source; and
one or more LCOS (Liquid Crystal on Silicon) chips.
11. The system of claim 10 wherein the plurality of edge emitting laser diodes comprises the first edge emitting laser diode, a second edge emitting laser diode, and a third edge emitting laser diode.
12. The system of claim 11 wherein the first edge emitting laser diode is a green edge emitting laser diode operable in the 490-540 nm wavelength range and characterized by the semipolar {20-21} orientation.
13. The system of claim 12 wherein the green edge emitting laser diode is characterized by the semipolar {20-21} orientation and comprises a stripe region characterized by a cavity orientation substantially in a projection of a c-direction.
14. The system of claim 11 where the second edge emitting laser diode is a green edge emitting laser diode operable in the 490-540 nm wavelength range and characterized by a polar c-plane orientation.
15. The system of claim 11 wherein the second edge emitting laser diode is a blue edge emitting laser diode operable in the 430-480 nm wavelength range and characterized by a polar c-plane orientation.
16. The system of claim 11 wherein the first edge emitting laser diode is a blue edge emitting laser diode operable in the 430-480 nm wavelength range and characterized by a nonpolar or semipolar orientation.
17. The system of claim 11 wherein the third edge emitting laser diode is a red edge emitting laser diode comprises of GaAlInP material.
18. The system of claim 11 wherein the first edge emitting laser diode, the second edge emitting laser, and the third edge emitting laser diode share a first mounting surface.
19. A projection system comprising:
an interface for receiving images or video signal;
a light source including a plurality of edge emitting laser diodes, the plurality of edge emitting laser diodes including a first edge emitting laser diode, the first edge emitting laser diode being non-polar or semi-polar or polar and fabricated from gallium nitride material;
a power source electrically coupled to the light source; and
one or more LCOS (Liquid Crystal on Silicon) chips;
wherein the plurality of edge emitting laser diodes comprises the first edge emitting laser diode, a second edge emitting laser diode, and a third edge emitting laser diode;
wherein the first edge emitting laser diode is a green edge emitting laser diode operable in the 490-540 nm wavelength range and characterized by the semipolar {20-21} orientation;
wherein the second edge emitting laser diode is a blue edge emitting laser diode operable in the 430-480 nm wavelength range and characterized by a polar c-plane orientation;
wherein the third edge emitting laser diode is a red edge emitting laser diode comprises of GaAlInP material.