High-k dielectrics with a low-k interface for solution processed devices
View Patent ↗A device, including a substrate, an electronically active component on the substrate, an interface dielectric on the semiconductor, and a relaxor dielectric on the interface dielectric. The relaxor dielectric includes a surfactant that is solid at room temperature.
1. A device, comprising:
a substrate;
an electronically active component on the substrate;
an interface dielectric at least partially on the electrically active component; and
a relaxor dielectric on the interface dielectric, wherein the relaxor dielectric includes a surfactant that is solid at room temperature and has a higher dielectric constant than the interface dielectric.
2. The device of claim 1 , further comprising a source and a drain on the substrate at least partially covered by the electronically active layer, and the electronically active layer comprises a semiconductor.
3. The device of claim 2 , further comprising a gate on the interface dielectric.
4. The device of claim 1 , wherein the interface dielectric comprises one of a dielectric or a nanoparticle blend.
5. The device of claim 1 , wherein the interface dielectric comprises a perfluoropolymer.
6. The device of claim 1 , wherein the interface dielectric comprises a high-k PVDF-copolymer.
7. The device of claim 1 , wherein the surfactant comprises a methacrylate-based fluorinated copolymer.
8. The device of claim 1 , wherein the surfactant and the interface dielectric are soluble in the same solvents.
9. The device of claim 1 , wherein the surfactant concentration in the interface dielectric is low enough to allow for further solution processing and high enough to allow formation of a film on the surface of the dielectric.
10. The device of claim 1 , wherein the electronically active layer comprises a metal electrode.
11. The device of claim 8 , wherein the device further comprises a capacitor having a second electrode on the interface dielectric.
12. A method of manufacturing an electronic device, comprising:
forming an electronically active component on a substrate;
printing an interface dielectric over the electronically active component;
mixing a solid surfactant with a second dielectric; and
printing the second dielectric onto the interface dielectric.
13. The method of claim 10 , wherein forming an electronically active component comprises forming a source and drain on the substrate.
14. The method of claim 13 , further comprising forming a gate on the interface dielectric.
15. The method of claim 12 , wherein forming an electronically active component comprises forming a metal electrode on the substrate.
16. The method of claim 15 , further comprising forming a second electrode on the interface dielectric.
17. The method of claim 12 , wherein printing an interface dielectric comprises printing a perfluopolymer.
18. The method of claim 11 , wherein mixing a solid surfactant with a dielectric, comprises mixing one of trifluorotoluene, n-methyl-2-pyrrolidone, methyl ethyl ketone, and toluene, with one of poly(methylmethacrylate), cyanoethyl pullulan, P(VDF-TrFE-CFE), P(VDF-TrFE-CTFE), and polystyrene.
19. A device, comprising:
a substrate;
a source and a drain on the substrate;
an electronically active component comprising a semiconductor on the substrate at least partially covering the source and drain;
an interface dielectric on the electrically active component; and
a relaxor dielectric on the interface dielectric, wherein the relaxor dielectric includes a surfactant that is solid at room temperature.