Manufacturing method of semiconductor device, and semiconductor device

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an insulating layer with a concave portion over a substrate;

forming a conductive film over the insulating film and an inside of the concave portion;

polishing and removing the conductive film positioned over the insulating layer;

cleaning the insulating layer in a light-shielded state; and

moving the substrate by detecting presence or absence of the substrate in the light-shielded state using a sensor between the step of polishing and the step of cleaning, or after the step of cleaning.

2. The method for manufacturing a semiconductor device according to claim 1 ,

wherein the sensor is an infrared sensor, and

wherein in the moving step, an infrared light emitted from the substrate is detected by the infrared sensor, thereby detecting the presence or absence of the substrate.

3. The method for manufacturing a semiconductor device according to claim 2 , wherein the infrared sensor is disposed on a back surface side of the substrate.

4. The method for manufacturing a semiconductor device according to claim 3 , further comprising the step of providing a cover member for covering the infrared sensor.

5. The method for manufacturing a semiconductor device according to claim 1 ,

wherein the sensor is an ultrasonic sensor, and

wherein in the moving step, the ultrasonic sensor is adapted to emit ultrasound toward the substrate, and to detect the ultrasound reflected by the substrate, thereby detecting the presence or absence of the substrate.

6. The method for manufacturing a semiconductor device according to claim 5 , wherein a source for emitting the ultrasound is disposed above the substrate.

7. The method for manufacturing a semiconductor device according to claim 1 , wherein the conductive film is a Cu film.

8. The method for manufacturing a semiconductor device according to claim 1 ,

wherein the concave portion penetrates the insulating layer, and

wherein the conductive film is a W film.

9. A semiconductor manufacturing apparatus, comprising:

a substrate supporter for supporting a substrate;

a moving portion for moving the substrate supported by the substrate supporter;

a light shielding portion for shielding the substrate supporter and the moving portion from light by enclosing the substrate supporter and the moving portion;

a substrate detector disposed in the light shielding portion and adapted to detect presence or absence of the substrate in a light-shielded state supported by the substrate supporter; and

a nozzle for discharging a cleaning liquid toward the substrate supported by the substrate supporter.

10. The semiconductor manufacturing apparatus according to claim 9 , wherein the substrate supporter is adapted to support the substrate horizontally.

11. A semiconductor manufacturing apparatus, comprising:

a substrate supporter for supporting a substrate;

a moving portion for moving the substrate supported by the substrate supporter;

a light shielding portion for shielding the substrate supporter and the moving portion from light by enclosing the substrate supporter and the moving portion; and

a substrate detector disposed in the light shielding portion and adapted to detect presence or absence of the substrate in a light-shielded state supported by the substrate supporter,

wherein the substrate supporter is adapted to support the substrate vertically.