GRAPHENE DEFECT ALTERATION
Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.
1 . A system for at least partially altering one or more defects in a layer on a substrate, wherein the layer comprises graphene, the system comprising:
a chamber configured to receive the layer, wherein the layer comprises one or more defects in the graphene; and
a container configured to be in communication with the chamber;
wherein the chamber and the container are configured to expose the layer to a gas, wherein the gas comprises hydrogen and at least one of Boron (B), Aluminum (Al), Gallium (Ga), Indium (In) and Thallium (Tl); and
wherein exposure of the layer to the gas at least partially alter the one or more defects in the graphene.
2 . The system of claim 1 , wherein the chamber and the container are configured to expose the layer to the gas, wherein the gas comprises one or more of a borane and an alane.
3 . The system of claim 1 , wherein:
the gas is a first gas; and
wherein the chamber and the container are configured to
expose the layer to a second gas to produce an exposed layer, wherein the second gas comprises an amine; and
expose the exposed layer to the first gas.
4 . The system of claim 1 , wherein:
the gas is a first gas; and
wherein the chamber and the container are configured to
expose the layer to a second gas to produce an exposed layer, wherein the second gas comprises an amine; and
expose the exposed layer to the first gas, wherein the first gas comprises one or more of a borane and an alane.
5 . The system of claim 1 , wherein:
the gas is a first gas; and
wherein the chamber and the container are configured to
expose the layer to a second gas to produce an exposed layer, wherein the second gas comprises one or more of pyrrolidine, piperidine and diethylamine; and
expose the exposed layer to the first gas, wherein the first gas comprises one or more of a borane and an alane.
6 . The system of claim 1 , wherein the chamber and the container are configured to expose the layer to the gas, wherein the gas comprises at least one of diborane, 9-borabicyclo(3.3.1)nonane, diisobutylaluminium hydride, and aluminum hydride.
7 . The system of in claim 1 , wherein the chamber and the container are configured to
expose the layer to piperidine to produce an exposed layer; and
expose the exposed layer to 9-borabicyclo(3.3.1)nonane.
8 . The system of claim 1 , wherein the chamber and the container are configured to
expose the layer to a second gas to produce a first exposed layer, wherein the second gas comprises an amine;
expose the first exposed layer to a first inert gas to produce a second exposed layer;
expose the second exposed layer to the first gas to produce a third exposed layer; and
expose the third exposed layer to a second inert gas to produce a fourth exposed layer.
9 . The system of claim 1 , further comprising:
a heater in communication with the chamber, wherein the heater is configured to heat the layer to a temperature of about 150 degrees Celsius to about 300 degrees Celsius.
10 . The system of claim 1 , wherein the gas is a first gas and the system further comprises:
a heater in communication with the chamber, wherein the heater is configured to heat the layer to a temperature of about 80 degrees Celsius to about 150 degrees Celsius to produce a heated layer; and
the chamber and the container are configured to
expose the heated layer to a second gas to produce a first exposed layer, wherein the second gas comprises an amine;
expose the first exposed layer to a first inert gas to produce a second exposed layer;
expose the second exposed layer to the first gas to produce a third exposed layer;
expose the third exposed layer to a second inert gas to produce a fourth exposed layer; and
the heater is configured to heat the fourth exposed layer to a temperature of about 150 degrees Celsius to about 300 degrees Celsius.
11 . The system of claim 1 , wherein the gas is a first gas and the system further comprises:
a heater in communication with the chamber, wherein the heater is configured to heat the layer to a temperature of about 80 degrees Celsius to about 150 degrees Celsius to produce a heated layer;
the chamber and the container are configured to
expose the heated layer to a second gas to produce a first exposed layer, wherein the second gas comprises an amine;
expose the first exposed layer to a first inert gas to produce a second exposed layer;
expose the second exposed layer to the first gas to produce a third exposed layer, wherein the first gas comprises one or more of an alane and a borane;
expose the third exposed layer to a second inert gas to produce a fourth exposed layer; and
the heater is configured to heat the fourth exposed layer to a temperature of about 150 degrees Celsius to about 300 degrees Celsius.
12 . The system of claim 1 , wherein the gas is a first gas and the system further comprises:
a heater in communication with the chamber, wherein the heater is configured to heat the layer to a temperature of about 80 degrees Celsius to about 150 degrees Celsius to produce a heated layer;
wherein the chamber and the container are configured to
expose the heated layer to a second gas to produce a first exposed layer, wherein the second gas comprises an amine;
expose the first exposed layer to a first inert gas to produce a second exposed layer;
expose the second exposed layer to the first gas to produce a third exposed layer, wherein the first gas comprises at least one of diborane, 9-borabicyclo(3.3.1)nonane, diisobutylaluminium hydride, and aluminum hydride;
expose the third exposed layer to a second inert gas to produce a fourth exposed layer; and
the heater is configured to heat the fourth exposed layer to a temperature of about 150 degrees Celsius to about 300 degrees Celsius.
13 . A chamber for at least partially altering one or more defects in a layer on a substrate, wherein the layer comprises graphene, the chamber comprising:
an inlet port configured to receive a gas into the chamber, wherein the gas comprises hydrogen and at least one of Boron (B), Aluminum (Al), Gallium (Ga), Indium (In) and Thallium (Tl),
wherein the chamber is configured to receive the layer, the layer comprising one or more defects in the graphene, and to expose the layer to the gas to at least partially alter the one or more defects in the graphene.
14 . The chamber of claim 13 , further comprising the substrate and the layer on the substrate.
15 . The chamber of claim 13 , further comprising the gas.
16 . The chamber of claim 13 , further configured to be in communication with a container, wherein the chamber and the container are configured to expose the layer to the gas.
17 . The chamber of claim 13 , further configured to be in communication with a heater, wherein the heater is configured to heat the layer to a temperature of about 150 degrees Celsius to about 300 degrees Celsius.
18 . The chamber of claim 13 , wherein the gas comprises one or more of a borane and an alane.
19 . The chamber of claim 13 , wherein the gas comprises at least one of diborane, 9-borabicyclo(3.3.1)nonane, diisobutylaluminium hydride, and aluminum hydride.
20 . The chamber of claim 13 , wherein the gas is a first gas and the inlet port is further configured to receive a second gas into the chamber, wherein the second gas comprises an amine, and wherein exposure of the layer to the second gas produces an exposed layer.
21 . The chamber of claim 18 , wherein the gas is a first gas and the inlet port is further configured to receive a second gas into the chamber, wherein the second gas comprises an amine, and wherein exposure of the layer to the second gas produces an exposed layer.
22 . The chamber of claim 18 , wherein the gas is a first gas and the inlet port is further configured to receive a second gas into the chamber, wherein the second gas comprises one or more of pyrrolidine, piperidine and diethylamine, and wherein exposure of the layer to the second gas produces an exposed layer.
23 . The chamber of claim 13 , wherein the gas is a first gas and is 9-borabicyclo(3.3.1)nonane and the inlet port is further configured to receive a second gas into the chamber, wherein the second gas comprises piperidine, and wherein exposure of the layer to the second gas produces an exposed layer.
24 . The chamber of claim 13 , wherein the gas is a first gas and the inlet port is further configured to receive:
a second gas into the chamber, wherein the second gas comprises an amine, and wherein exposure of the layer to the second gas produces a first exposed layer;
a first inert gas into the chamber, wherein exposure of the first exposed layer to the first inert gas produces a second exposed layer, and wherein exposure of the second exposed layer to the first gas produces a third exposed layer; and
a second inert gas into the chamber, wherein exposure of the third exposed layer to the second inert gas produces a fourth exposed layer.