Dual-band semiconductor RF amplifier device
View Patent ↗There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor ( 205 ) having an output capacitance (C O ), (b) a first shunt element ( 210 ) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L 1 ) connected in series with a first shunt capacitor (C 1 ), and (c) a second shunt element ( 220 ) arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor (L 2 ) connected in series with a second shunt capacitor (C 2 ), wherein the capacitance of the second shunt capacitor (C 2 ) is at least two times the capacitance of the first shunt capacitor (C 1 ). Furthermore, there is described a method of manufacturing a dual-band semiconductor RF amplifier device and a dual-band RF amplifier comprising a plurality of such amplifier devices.
1. A dual-band semiconductor RF amplifier device, the device comprising
a transistor having an output capacitance,
a first shunt element arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor connected in series with a first shunt capacitor, and
a second shunt element arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor connected in series with a second shunt capacitor,
wherein the dual-band semiconductor RF amplifier device is configured to be able to operate at a first operating frequency and a second operating frequency, said second operating frequency being smaller than said first operating frequency,
wherein a capacitance of the second shunt capacitor is such that it forms a short at both the first and second operating frequency,
wherein the first shunt inductor, the second shunt inductor, and the first shunt capacitor are configured to form an inductance that resonates with the output capacitance at both the first and second operating frequency.
2. The device according to claim 1 , wherein the capacitance of the second shunt capacitor is at least two times the capacitance of the first shunt capacitor.
3. The device according to claim 1 , wherein the capacitance of the first shunt capacitor is between 100 pF and 250 pF and the capacitance of the second shunt capacitor is between 500 pF and 100 nF.
4. The device according to claim 1 , wherein
the first shunt element is adapted to, in combination with the output capacitance, form a first resonance circuit having a first resonance frequency that corresponds to the first operating frequency, and
the second shunt element is adapted to, in combination with the output capacitance and the first shunt element, form a second resonance circuit having a second resonance frequency that corresponds to the second operating frequency, the second resonance frequency being lower than the first resonance frequency.
5. The device according to claim 1 , wherein the first resonance frequency is 2140 MHz and the second resonance frequency is 500 MHz.
6. The device according to claim 1 , wherein the second shunt capacitor is formed as a high-density capacitor.
7. The device according to claim 1 , wherein the first shunt inductor and second shunt inductor are constituted by bonding wires and/or low-loss printed inductors.
8. The device according to claim 1 , further comprising an input matching circuit for providing dual-band input impedance matching.
9. The device according to claim 1 , wherein the input matching circuit comprises
a first input matching element arranged between an input terminal and a ground terminal, the first input matching element comprising a first input matching inductor connected in series with a first input matching capacitor, and
a second input matching element arranged in parallel with the first input matching capacitor, the second input matching element comprising a second input matching inductor connected in series with a second input matching capacitor,
wherein the capacitance of the second input matching capacitor is at least two times the capacitance of the first input matching capacitor.
10. A dual-band RF amplifier, the amplifier comprising a plurality of devices according to claim 1 , wherein the devices are arranged in parallel between an amplifier input terminal and an amplifier output terminal.
11. A method of manufacturing a dual-band semiconductor RF amplifier device, the method comprising
providing a transistor, the transistor having an output capacitance,
arranging a first shunt element in parallel with the output capacitance, the first shunt element comprising a first shunt inductor connected in series with a first shunt capacitor, and
arranging a second shunt element in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor connected in series with a second shunt capacitor,
wherein the dual-band semiconductor RF amplifier device is configured to be able to operate at a first operating frequency and a second operating frequency, said second operating frequency being smaller than said first operating frequency,
wherein a capacitance of the second shunt capacitor is such that it forms a short at the first and second operating frequency,
wherein the first shunt inductor, the second shunt inductor, and the first shunt capacitor are configured to form an inductance that resonates with the output capacitance at both the first and second operating frequency.