Display apparatus and method of manufacturing the same

1. A display apparatus comprising:

a first substrate that includes a display area in which pixels are arranged and a non-display area surrounding the display area;

a second substrate disposed to face the first substrate; and

a sealing member disposed in the non-display area to attach the second substrate to the first substrate, the first substrate comprising:

a base substrate;

a first inorganic insulating layer disposed on the base substrate;

a second inorganic insulating layer disposed on the first inorganic insulating layer; and

an organic layer disposed on the first and second inorganic insulating layers, wherein the organic layer comprises:

an organic insulating layer disposed on the second inorganic insulating layer; and

a black matrix directly on the organic insulating layer in the non-display area, and the sealing member is directly on the black matrix; and

a third inorganic insulating layer disposed on the organic insulating layer in the display area, the black matrix being directly on the third inorganic insulating layer in the display area.

2. The display apparatus of claim 1 , wherein the first and second inorganic insulating layers comprise an inorganic material and the organic insulating layer, the black matrix, and the sealing member comprise an organic material.

3. The display apparatus of claim 1 , wherein each of the pixels comprises:

a thin film transistor disposed on the base substrate;

the second inorganic insulating layer disposed on the base substrate to cover the thin film transistor;

the organic insulating layer disposed on the second inorganic insulating layer;

a common electrode disposed on the organic insulating layer and including a first opening;

the third inorganic insulating layer disposed on the organic insulating layer to cover the common electrode; and

a pixel electrode disposed on the third inorganic insulating layer in a pixel area corresponding to the pixel, the pixel electrode is connected to the thin film transistor through a first contact hole formed through the second inorganic insulating layer, the organic insulating layer, and the third inorganic insulating layer, the first opening is overlapped with the first contact hole and has a size greater than a size of the first contact hole, and the first inorganic insulating layer is disposed on the base substrate to cover a gate electrode of the thin film transistor.

4. The display apparatus of claim 3 , wherein the pixel further comprises a color filter disposed between the second inorganic insulating layer and the organic insulating layer in the pixel area, and the black matrix is disposed on the third inorganic insulating layer in a non-pixel area disposed adjacent to the pixel area.

5. The display apparatus of claim 3 , wherein the pixel electrode comprises:

a plurality of branch portions disposed to be spaced apart from each other at regular intervals;

a first connection portion that connects one ends of the branch portions in a direction in which the branch portions extend; and

a second connection portion that connects the other ends of the branch portions.

6. The display apparatus of claim 1 , further comprising a liquid crystal layer disposed between the first substrate and the second substrate.

7. A method of manufacturing a display apparatus, comprising:

preparing a base substrate that includes a display area in which pixels are disposed and a non-display area disposed adjacent to the display area;

forming a first inorganic insulating layer on the base substrate;

forming a second inorganic insulating layer on the first inorganic insulating layer;

forming an organic layer on the first and second inorganic insulating layers, wherein the forming of the organic layer comprises:

forming an organic insulating layer on the second inorganic insulating layer;

forming a third inorganic insulating layer disposed on the organic insulating layer;

removing the third inorganic insulating layer from the non-display area; and

forming a black matrix directly on the organic insulating layer in the non-display area and directly on the third inorganic insulating layer in the display area;

forming a sealing member directly on the black matrix;

disposing a second substrate to face the base substrate; and

attaching the second substrate to the sealing member.

8. The method of claim 7 , wherein the first, second, and third inorganic insulating layers comprise an inorganic material and the organic insulating layer, the black matrix, and the sealing member comprise an organic material.

9. The method of claim 7 , wherein each of the pixels comprises:

a thin film transistor disposed on the base substrate;

the second inorganic insulating layer disposed on the base substrate to cover the thin film transistor;

the organic insulating layer disposed on the second inorganic insulating layer;

a common electrode disposed on the organic insulating layer and including a first opening;

the third inorganic insulating layer disposed on the organic insulating layer to cover the common electrode; and

a pixel electrode disposed on the third inorganic insulating layer in a pixel area corresponding to the pixel, the pixel electrode is connected to the thin film transistor through a first contact hole formed through the second inorganic insulating layer, the organic insulating layer, and the third inorganic insulating layer, the first opening is overlapped with the first contact hole and has a size greater than a size of the first contact hole, and the first inorganic insulating layer is disposed on the base substrate to cover a gate electrode of the thin film transistor.