DRIVING SIGNAL GENERATING CIRCUIT AND POWER SEMICONDUCTOR DEVICE DRIVING APPARATUS INCLUDING THE SAME
There are provided a driving signal generating circuit and a power semiconductor device driving apparatus including the same. The driving signal generating circuit for generating driving signals provided to first and second transistors driving a power semiconductor device includes: a first driving signal generating unit generating a first driving signal including a high level signal and a low level signal and providing the first driving signal to a gate of the first transistor; a detecting unit detecting a detection voltage depending on a current flowing in the power semiconductor device; a second driving signal generating unit generating a second driving signal in inverse proportion to the detection voltage; and a switching unit performing a switching operation depending on the first driving signal to transfer the second driving signal to a gate of the second transistor.
1 . A driving signal generating circuit for generating driving signals provided to first and second transistors driving a power semiconductor device, comprising:
a first driving signal generating unit generating a first driving signal including a high level signal and a low level signal and providing the first driving signal to a gate of the first transistor;
a detecting unit detecting a detection voltage depending on a current flowing in the power semiconductor device;
a second driving signal generating unit generating a second driving signal in inverse proportion to the detection voltage; and
a switching unit performing a switching operation depending on the first driving signal to transfer the second driving signal to a gate of the second transistor.
2 . The driving signal generating circuit of claim 1 , wherein the detecting unit includes a detection resistor disposed between the power semiconductor device and a ground.
3 . The driving signal generating circuit of claim 1 , wherein the second driving signal generating unit includes:
a first operational amplifier having an inverting terminal, a non-inverting terminal to which the detection voltage is applied, and an output terminal connected to the inverting terminal;
a first resistor having one end connected to the output terminal of the first operational amplifier;
a second operational amplifier having a non-inverting terminal to which a predetermined reference voltage is applied, an inverting terminal connected to the other end of the first resistor, and an output terminal outputting the second driving signal; and
a second resistor disposed between the inverting terminal of the second operational amplifier and the output terminal of the second operational amplifier.
4 . The driving signal generating circuit of claim 1 , wherein the switching unit includes:
an inverter inverting the first driving signal; and
a switch performing a switching operation through an output signal of the inverter and disposed between the second driving signal generating unit and a ground.
5 . The driving signal generating circuit of claim 1 , wherein the switching unit includes a switch disposed between the second driving signal generating unit and the gate of the second transistor.
6 . A power semiconductor device driving apparatus comprising:
a driving circuit including a first transistor driven so as to turn on a power semiconductor device and a second transistor driven so as to turn off the power semiconductor device; and
a driving signal generating circuit generating a first driving signal driving the first transistor and a second driving signal driving the second transistor,
wherein a level of the second driving signal is in inverse proportion to that of a current flowing in the power semiconductor device.
7 . The power semiconductor device driving apparatus of claim 6 , wherein the first transistor is disposed between a predetermined driving voltage terminal and a gate of the power semiconductor device, and the second transistor is disposed between a ground and the gate of the power semiconductor device.
8 . The power semiconductor device driving apparatus of claim 6 , wherein the first transistor is a P-type transistor, and the second transistor is an N-type transistor.
9 . The power semiconductor device driving apparatus of claim 6 , wherein the driving signal generating circuit includes:
a first driving signal generating unit generating the first driving signal including a high level signal and a low level signal;
a detecting unit detecting a detection voltage depending on the current flowing in the power semiconductor device;
a second driving signal generating unit generating the second driving signal in inverse proportion to the detection voltage; and
a switching unit performing a switching operation depending on the first driving signal to transfer the second driving signal to a gate of the second transistor.
10 . The power semiconductor device driving apparatus of claim 9 , wherein the detecting unit includes a detection resistor disposed between the power semiconductor device and a ground.
11 . The power semiconductor device driving apparatus of claim 9 , wherein the second driving signal generating unit includes:
a first operational amplifier having an inverting terminal, a non-inverting terminal to which the detection voltage is applied, and an output terminal connected to the inverting terminal;
a first resistor having one end connected to the output terminal of the first operational amplifier;
a second operational amplifier having a non-inverting terminal to which a predetermined reference voltage is applied, an inverting terminal connected to the other end of the first resistor, and an output terminal outputting the second driving signal; and
a second resistor disposed between the inverting terminal of the second operational amplifier and the output terminal of the second operational amplifier.
12 . The power semiconductor device driving apparatus of claim 9 , wherein the switching unit includes:
an inverter inverting the first driving signal; and
a switch performing a switching operation through an output signal of the inverter.
13 . The power semiconductor device driving apparatus of claim 9 , wherein the switching unit includes a switch disposed between the second driving signal generating unit and the gate of the second transistor.