Manufacturing method for an LED
A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.
1. A manufacturing method for an LED (light emitting diode), comprising:
providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate;
forming a blocking layer on the first N-type epitaxial layer;
etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer;
forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves;
forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and
forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, the N-type electrode disposed on the blocking layer opposite to the P-type electrode, wherein the N-type electrode is separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact the first N-type epitaxial layer.
2. The manufacturing method for an LED as claimed in claim 1 , wherein the buffer layer is made of a III-group nitride compound semiconducting material, and the first N-type epitaxial layer is a III-group nitride compound semiconductor contacting layer.
3. The manufacturing method for an LED as claimed in claim 2 , wherein the blocking layer is a III-group nitride compound electron blocking layer.
4. The manufacturing method for an LED as claimed in claim 2 , wherein the second N-type epitaxial layer is a III-group nitride compound semiconducting material.
5. The manufacturing method for an LED as claimed in claim 4 , wherein the light emitting layer is a III-group nitride compound semiconductor active layer, the P-type epitaxial layer is a III-group nitride compound semiconducting material, and the conductive layer is a transparent conductive layer.
6. The manufacturing method for an LED as claimed in claim 1 , wherein the N-type electrode is located on the blocking layer and makes contact with the first N-type epitaxial layer via a portion of the N-type electrode in the patterned grooves of the blocking layer.
7. The manufacturing method for an LED as claimed in claim 1 , wherein the N-type electrode is located on the first N-type epitaxial layer.
8. The manufacturing method for an LED as claimed in claim 1 , wherein a depression penetrating through the second N-type epitaxial layer, the blocking layer, the light emitting layer and the P-type epitaxial layer is formed for accommodating the N-type electrode therein.
9. The manufacturing method for an LED as claimed in claim 8 , wherein the depression occupies an area which is substantially similar to that the N-type electrode occupies.
10. A manufacturing method for an LED, comprising:
providing a substrate having a buffer layer and a first N-type epitaxial layer sequentially disposed on a top face of the substrate;
forming a blocking layer on the first N-type epitaxial layer;
etching the blocking layer to form patterned grooves, wherein the patterned grooves penetrate the blocking layer to the first N-type epitaxial layer;
forming a second N-type epitaxial layer on the blocking layer, the second N-type epitaxial layer contacting the first N-type epitaxial layer via a portion of the second N-type epitaxial layer in the patterned grooves;
forming a light emitting layer, a P-type epitaxial layer and a conductive layer sequentially disposed on the second N-type epitaxial layer; and
forming an N-type electrode to electrically connect with the first N-type epitaxial layer, and a P-type electrode on the conductive layer, wherein the N-type electrode is disposed inside the patterned grooves of the blocking layer to contact the first N-type epitaxial layer.