IP Library Granted Patent US 9,577,120
Granted Patent B2
US 9,577,120 · App. 14/271,122 · Granted Feb 21, 2017

Anti-reflective coating with high optical absorption layer for backside contact solar cells

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Quick Facts
Patent No.
US 9,577,120
App. No.
14/271,122
Granted
Feb 21, 2017
Kind
B2
Abstract

A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride.

Claims (9)

1. A backside contact solar cell comprising:

a textured surface on a front side of a silicon substrate of the backside contact solar cell, the front side facing the sun during normal operation to collect solar radiation;

a passivation layer formed over and in direct contact with the textured surface;

a high optical absorption layer formed over and in direct contact with the passivation layer, wherein the high optical absorption layer is a high-k silicon nitride layer having an extinction coefficient of at least 0.03 to light at wavelengths of 400 nm and shorter; and

a low optical absorption layer formed over and in direct contact with the high optical absorption layer, wherein the low optical absorption layer is a low-k silicon nitride layer having an extinction coefficient of at most 0.03 to light at wavelengths of 400 nm and longer.

2. The backside contact solar cell of claim 1 , wherein the passivation layer comprises silicon dioxide.

3. The backside contact solar cell of claim 1 , wherein the high optical absorption layer is configured to block 10% of UV radiation coming into the silicon substrate from the front side.

4. The backside contact solar cell of claim 1 , wherein the high optical absorption layer is transparent in visible range.

5. The backside contact solar cell of claim 1 , wherein the low optical absorption layer is transparent to UV radiation.

Assignments (4)
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 062490/0742 →