N-type silicon solar cell with contact/protection structures
View Patent ↗A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.
1. A solar cell comprising:
a semiconductor substrate having an upper surface and including a body layer and an emitter layer disposed between the upper surface and the body layer;
a plurality of spaced-apart contact structures disposed over first portions of the upper surface, each of the plurality of spaced-apart contact structures having a minimum lateral dimension;
a dielectric passivation layer disposed over the upper surface such that the dielectric passivation layer is disposed on the plurality of spaced-apart contact structures and on second portions of the upper surface disposed between the plurality of spaced-apart contact structures;
a plurality of metal gridlines disposed on an upper surface of the passivation layer; and
a plurality of metal via structures extending through associated openings defined in the passivation layer such that each metal via structure electrically connects an associated metal gridline of the plurality of metal gridlines and an associated contact structure of the plurality of contact structures,
wherein each said associated opening defined in the passivation layer has a maximum lateral dimension that is smaller than the minimum lateral dimension of the associated contact structure.
2. The solar cell of claim 1 , wherein the semiconductor substrate comprises an n-type body layer and a p+ emitter layer disposed between the upper surface and the n-type body layer.
3. The solar cell of claim 2 , wherein the passivation layer comprises Al 2 O 3 .
4. The solar cell of claim 2 , wherein the plurality of spaced-apart contact structures comprise one of a plurality of spaced-apart dot structures, a plurality of spaced-apart continuous-line structures, and a plurality of spaced dashed-line structures.
5. The solar cell of claim 1 , further comprising a silicide structure disposed between each of the plurality of contact structures and said emitter layer.
6. The solar cell of claim 1 , wherein a first sheet resistance of the emitter layer in first regions underlying said plurality of spaced-apart contact structures is less than a second sheet resistance of the emitter layer in second regions disposed between the plurality of spaced-apart contact structures.
7. The solar cell of claim 1 , wherein the semiconductor substrate comprises a p-type body layer and an n+ emitter layer disposed between the upper surface and the p-type body layer.
8. A solar cell comprising: a silicon substrate having an upper surface, a body layer formed by a first semiconductor material disposed in said silicon substrate, and an emitter layer formed by a second semiconductor material and disposed between the upper surface and the body layer; a dielectric passivation layer disposed over the upper surface; a plurality of metal gridlines disposed on an upper surface of the passivation layer; and
a plurality of metal via structures extending through an associated opening defined in the passivation layer such that each metal via structure electrically connects an associated metal gridline of the plurality of metal gridlines to an associated region of the emitter layer; wherein the solar cell further comprises a plurality of spaced-apart contact structures disposed on first portions of the upper surface such that the dielectric passivation layer is disposed on the plurality of spaced-apart contact structures and on second portions of the upper surface disposed between the plurality of spaced-apart contact structures, wherein the plurality of metal via structures and associated openings defined in the passivation layer are arranged such that each metal via structure electrically connects an associated metal gridline of the plurality of metal gridlines and an associated contact structure of the plurality of contact structures, and
wherein each said associated opening has a diameter that is smaller than a width of the associated contact structure.
9. The solar cell of claim 8 , wherein the semiconductor substrate comprises an n-type body layer and a p+ emitter layer disposed between the upper surface and the n-type body layer.
10. The solar cell of claim 9 , wherein the passivation layer comprises Al 2 O 3 .
11. The solar cell of claim 9 , wherein the plurality of spaced-apart contact structures comprise one of a plurality of spaced-apart dot structures, a plurality of spaced-apart continuous-line structures, and a plurality of spaced dashed-line structures.
12. The solar cell of claim 8 , further comprising a silicide structure disposed between each of the plurality of contact structures and said emitter layer.
13. The solar cell of claim 8 , wherein a first sheet resistance of the emitter layer in first regions underlying said plurality of spaced-apart contact structures is less than a second sheet resistance of the emitter layer in second regions disposed between the plurality of spaced-apart contact structures.
14. The solar cell of claim 8 , wherein the semiconductor substrate comprises a p-type body layer and an n+ emitter layer disposed between the upper surface and the p-type body layer.
15. A solar cell including:
a silicon substrate having an upper surface;
a dielectric passivation layer disposed over the upper surface;
a plurality of metal gridlines disposed on an upper surface of the passivation layer; and
a plurality of metal via structures extending through an associated opening defined in the passivation layer such that each metal via structure electrically connects an associated metal gridline of the plurality of metal gridlines to an associated region of a p+ emitter layer;
wherein the silicon substrate comprises an n-type body layer and a p+ emitter layer disposed between the upper surface and the n-type body layer,
wherein the solar cell further comprises a plurality of spaced-apart contact structures disposed on first portions of the upper surface such that the dielectric passivation layer is disposed on the plurality of spaced-apart contact structures and on second portions of the upper surface disposed between the plurality of spaced-apart contact structures,
wherein the plurality of metal via structures and associated openings defined in the passivation layer are arranged such that each metal via structure electrically connects an associated metal gridline of the plurality of metal gridlines and an associated contact structure of the plurality of contact structures, and
wherein each said associated opening has a diameter that is smaller than a width of the associated contact structure.
16. The solar cell of claim 15 , wherein the passivation layer comprises Al 2 O 3 .
17. The solar cell of claim 15 , wherein the plurality of spaced-apart contact structures comprise one of a plurality of spaced-apart dot structures, a plurality of spaced-apart continuous-line structures, and a plurality of spaced dashed-line structures.
18. The solar cell of claim 15 , further comprising a silicide structure disposed between each of the plurality of contact structures and said p+ emitter layer.
19. The solar cell of claim 15 , wherein a first sheet resistance of the emitter layer in first regions underlying said plurality of spaced-apart contact structures is less than a second sheet resistance of the emitter layer in second regions disposed between the plurality of spaced-apart contact structures.