IP Library Granted Patent US 9,087,476
Granted Patent B2
US 9,087,476 · App. 14/275,961 · Granted Jul 21, 2015

Display system and electrical appliance

Inventors: Shunpei Yamazaki (Tokyo, JP); Jun Koyama (Kanagawa, JP); Noriko Shibata (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G5/10G09G3/30G09G3/3233G09G3/2022G09G2300/0426G09G2300/0809G09G2300/0842G09G2320/029G09G2320/043G09G2320/0626G09G2330/021G09G2354/00G09G2360/14G09G2360/144G09G2360/145
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Quick Facts
Patent No.
US 9,087,476
App. No.
14/275,961
Granted
Jul 21, 2015
Kind
B2
Abstract

A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements.

Claims (51)

1. An electrical appliance comprising:

a light-emitting device, the light-emitting device comprising:

an insulating film over a first substrate;

an EL element over the insulating film, the EL element comprising:

a first electrode over the insulating film;

an EL layer over the first electrode; and

a second electrode over the EL layer, and

a second substrate over the EL element,

a sensor obtaining an information signal; and

a CPU controlling a luminance of the EL element based on the information signal,

wherein the information signal is any one of an environment information signal and a living-body information signal.

2. The electrical appliance according to claim 1 , wherein the insulating film is any one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film.

3. The electrical appliance according to claim 1 , wherein the EL layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.

4. The electrical appliance according to claim 1 , further comprising a film over the second electrode.

5. The electrical appliance according to claim 4 , wherein the film is a silicon nitride film.

6. The electrical appliance according to claim 1 , the sensor and the CPU are formed over the first substrate.

7. An electrical appliance comprising:

a light-emitting device, the light-emitting device comprising:

an insulating film over a first substrate;

an EL element over the insulating film, the EL element comprising:

a first electrode over the insulating film;

an EL layer over the first electrode; and

a second electrode over the EL layer, and

a second substrate over the EL element,

a sensor obtaining an information signal; and

a CPU controlling a luminance of the EL element based on the information signal,

wherein the information signal is an environment information signal, and

wherein the first substrate is a plastic substrate.

8. The electrical appliance according to claim 7 , wherein the insulating film is any one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film.

9. The electrical appliance according to claim 7 , wherein the EL layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.

10. The electrical appliance according to claim 7 , further comprising a film over the second electrode.

11. The electrical appliance according to claim 10 , wherein the film is a silicon nitride film.

12. The electrical appliance according to claim 7 , the sensor and the CPU are formed over the first substrate.

13. An electrical appliance comprising:

a first light-emitting device and a second light-emitting device, each of the first light-emitting device and the second light-emitting device comprising:

an insulating film over a first substrate;

an EL element over the insulating film, the EL element comprising:

a first electrode over the insulating film;

an EL layer over the first electrode; and

a second electrode over the EL layer, and

a second substrate over the EL element,

a sensor obtaining an information signal; and

a CPU controlling a luminance of the EL element based on the information signal,

wherein the first light-emitting device forms a first image for right-eye, and

wherein the second light-emitting device forms a second image for left-eye.

14. The electrical appliance according to claim 13 , wherein the information signal is a living-body information signal.

15. The electrical appliance according to claim 13 , wherein the insulating film is any one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film.

16. The electrical appliance according to claim 13 , wherein the EL layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.

17. The electrical appliance according to claim 13 , further comprising a film over the second electrode.

18. The electrical appliance according to claim 17 , wherein the film is a silicon nitride film.

19. The electrical appliance according to claim 13 , the sensor and the CPU are formed over the first substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2014
From: YAMAZAKI, SHUNPEI; KOYAMA, JUN; SHIBATA, NORIKO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 032938/0509 →
Priority Claims (1)
JP 2000-008419 · Jan 17, 2000 · national
Continuity (4)
Continuation 13587968 · Aug 17, 2012
Continuation 12618926 · Nov 16, 2009
Continuation 09752817 · Jan 3, 2001
Related Publication 20140247256A1 · Sep 4, 2014