Oxycarbonitride phosphors and light emitting devices using the same

1. A composition comprising a phosphor having the formula M(II) a Si b O c N d C e :A, wherein

6<a<8, 8<b<14, 13<c<17, 5<d<9, and 0<e<2;

M(II) comprises at least one divalent cation; and

A comprises a luminescence activator doped in the host crystal of the phosphor.

2. The composition of claim 1 , wherein M(II) comprises at least one divalent cation selected from the group consisting of Be, Mg, Ca, Sr, Ba, Cu, Co, Ni, Pd, Zn, and Cd; and, wherein A comprises a luminescence activator selected from the group consisting of Ce, Pr, Nd, Sm, En, Gd, Dy, Ho, Er, Tm, Yb, Lu, Mn, Bi, and Sb.

3. The composition of claim 2 , wherein A is doped in the host crystal of the phosphor at the concentration level of 0.001 mol % to 20 mol % relative to M(II).

4. A light emitting device comprising:

a light source emitting a first luminescence spectrum;

a phosphor composition of claim 3 ; which, when irradiated with light from the light source, emits light having a second luminescence spectrum.

5. The light emitting device of claim 4 , further comprising a second phosphor having a formula selected from the group consisting of

Ca 1−x Al x−xy Si 1−x+xy N 2−x−xy C xy :A;  (a)

Ca 1−x−z Na z M(III) x−xy−z Si 1−x+xy+z N 2−x−xy C xy :A;  (b)

M(II) 1−x−z M(I) z M(III) x−xy−z Si 1−x+xy+z N 2−x−xy C xy :A;  (c)

M(II) 1−x−z M(I) z M(II) x−xy−z Si 1−x+xy+z N 2−x−xy−2w/3 C xy O w−v/2 H v :A; and  (d)

M(II) 1−x−z M(I) z M(III) x−xy−z Si 1−x+xy+z N 2−x−xy−2w/3−v/3 C xy O w H v :A;  (e)

wherein:

0<x<1, 0<y<1, 0≦z<1, 0≦v<1, 0<w<1, x+z<1, x>xy+z, v/2≦w, x−xy−2w/3−v/3<2, and 0<x−xy−z<1;

M(II) is at least one divalent cation;

M(I) is at least one monovalent cation;

M(III) is at least one trivalent cation;

H is at least one monovalent anion; and

A is a luminescence activator.

6. The light emitting device of claim 5 , further comprising at least two additional phosphors.

7. The light emitting device of claim 5 , wherein the device emits white light.

8. The light emitting device of claim 5 , further comprising at least one phosphor selected from the group consisting of Ca 1−x Sr x S:Eu 2+ (0≦x≦1), 3.5MgO.0.5MgF 2 .GeO 2 :Mn 4+ , Y 2 O 2 S:Eu 3+ , M 2 Si 5 N 8 :Eu 2+ (M=Ca, Sr, Ba), MAlSiN 3 Eu 2+ (M=Ca, Sr), Y 2 Si 4 N 6 C:Eu 2+ , CaSiN 2 :Eu 2+ , Ca 1−x Sr x Ga 2 S4:Eu 2+ (0≦x≦1), Ca 1−x−y−z Mg x Sr y Ba z SiO 4 :Eu 2+ (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z≦1), BaMgAl 10 O 17 :Eu 2+ , Mn 2+ , MYSi 4 N 7 :Eu 2+ (M=Ca, Sr, Ba), β-sialon:Eu 2+ , MSi 2 O 2 N 2 :Eu 2+ (M=Ca, Sr, Ba), Ba 3 Si 6 O 12 N 2 :Eu 2+ , M 2 Si 5 N 8 :Ce 3+ (M=Ca, Sr, Ba), Y 2 Si 4 N 6 C:Ce 3+ , α-sialon:Yb 2+ , (MSiO 3 ) m .(SiO 2 ) n :Eu 2+ , X (M=Mg, Ca, Sr, Ba; X=F, Cl, Br, I; m is 1 or 0, and either (i) n>3 if m=1 or (ii) n=1 if m=0), MAl 2 O 4 :Eu 2+ (M=Mg, Ca, Sr), BaMgAl 10 O 17 :Eu 2+ , Y 3 Al 5 O 12 :Ce 3+ (cerium-doped garnet type phosphor), and α-sialon:Eu 2+ .