Fabrication of thin-film devices using selective area epitaxy
View Patent ↗A thin film device described herein includes a first thin film layer, a second film layer and a heterostructure within the second film layer. The first thin film layer is atop a substrate. The second thin film layer is grown from the first thin film layer through a patterned mask, having openings, under selective area growth (SAG) conditions. The second thin film layer is configured to be released from the first thin film layer by etching a trench. The etched trench may provide access to the patterned mask and the patterned mask may be eliminated with a wet etchant.
1. A device comprising:
an epitaxial film comprising:
a first film portion; and
a second film portion, wherein the second film portion is configured to substantially planarize the first film portion, and wherein upon the planarization of the first film portion a detectable artifact is created intermediate the first film portion and the second film portion.
2. The device of claim 1 , wherein the epitaxial film comprises a gallium-nitride based epitaxial film.
3. The device of claim 1 , wherein the artifact comprises an air pocket.
4. The device of claim 1 , wherein the epitaxial film is grown on a substrate and released from the substrate through use of a dry etchant, a wet etchant or a combination of a dry and wet etchant.
5. The device of claim 1 , wherein the epitaxial film includes side-bent threading dislocations positioned below a heterostructure region of the epitaxial film.
6. The device of claim 1 , wherein the epitaxial film is configured to be incorporated into a printed electronic device, a flexible transparent display, a flexible large area luminaire display, a photovoltaic display, a micro-display, an integrated circuit, or light-emitting diode chiplets.
7. The device of claim 6 , wherein the integrated circuit comprises one or more of a light-emitting diode, laser diode, vertical-cavity surface-emitting laser, transistor, or diode.