Semiconductor device and method of refresh thereof

1. A semiconductor device, comprising:

memory blocks suitable for storing data, wherein each of the memory blocks includes a normal string region in which normal data and copy data are stored and a flag string region in which flag data is stored;

peripheral circuits suitable for refreshing the memory blocks; and

a control circuit suitable for controlling the peripheral circuits to change data stored in a first memory block among the memory blocks and refresh the first memory block with the changed data,

wherein the copy data is a duplicate of the normal data, which is stored in the first memory block, stored in a second memory block in order to refresh the first memory block, and the flag data corresponds to a refresh cycle value.

2. The semiconductor device of claim 1 , wherein the control circuit controls the peripheral circuits to set a refresh cycle value, copy data of the first memory block to a second memory block, erase the first memory block, change the copied data of the second memory block, program the changed data in the first memory block, and reset the refresh cycle value.

3. The semiconductor device of claim 2 , wherein the semiconductor device includes a multi-level cell (MLC), and the control circuit controls the peripheral circuits to reverse LSB data and program the reversed LSB data in the first memory block and program MSB data in the first memory block as it is.

4. The semiconductor device of claim 1 , wherein the control circuit controls the peripheral circuits to further store a flag data identifying the data or the changed data stored in the memory blocks.

5. The semiconductor device of claim 4 , wherein the control circuit controls the peripheral circuits further to reverse back the changed data to the data based on the flag data during a read operation of the memory blocks.

6. A method of operating a semiconductor device, comprising:

setting a refresh cycle value;

copying data of a first memory block to a second memory block;

erasing the first memory block;

changing the data copied to the second memory block and refreshing the first memory block by programming the changed data in the first memory block; and

resetting the refresh cycle value.

7. The method of claim 6 , wherein the semiconductor device includes an MLC, and

wherein the changing of the data and the refreshing of the first memory block includes:

reading an LSB page of the second memory block;

reversing LSB data of the read LSB page;

programming the reversed LSB data in the first memory block;

reading an MSB page of the second memory block; and

programming MSB data of the read MSB page in the first memory block.

8. The method of claim 6 , wherein the semiconductor device includes a triple level cell (TLC), and

wherein the changing of the data and the refreshing of the first memory block includes:

reading an LSB page of the second memory block;

reversing LSB data of the read LSB page;

programming the reversed LSB data in the first memory block;

reading a CSB page of the second memory block;

programming CSB data of the read CSB page in the first memory block;

reading an MSB page of the second memory block; and

programming MSB data of the read MSB page in the first memory block.

9. The method of claim 6 , further comprising:

reading the refresh cycle value;

reading the data stored in the first memory block as it is when the read refresh cycle value is a positive value; and

reading the data stored in the first memory block and then changing the read data when the read refresh cycle value is a negative value.

10. The method of claim 9 , wherein the changing of the read data includes reversing the read LSB data of the first memory block.

11. A method of operating a semiconductor device, comprising:

refreshing memory cells of an erased state, a first program state higher than the erased state, a second program state higher than the first program state, and a third program state higher than the second program state,

wherein the memory cells of the erased state are refreshed to be of the third program state,

the memory cells of the first program state are refreshed to be of the second program state,

the memory cells of the second program state are refreshed to be of the first program state, and

the memory cells of the third program state are refreshed to be of the erased state.

12. The method of claim 11 , wherein the refreshing of the memory cells reverses and programs LSB data among original data stored in the memory cells, and programs MSB data among the original data as it is.

13. The method of claim 11 , further comprising:

alternating a refresh cycle value between first and second values whenever the refreshing of the memory cells is completed.

14. The method of claim 13 , wherein the first and second values are different to each other.