Bipolar transistor
View Patent ↗A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.
1. A bipolar transistor with a reduced variation in collector current as collector voltage changes, the bipolar transistor comprising:
an emitter region;
a collector region having a same conductivity type as the emitter region;
a base region comprising: an intrinsic base region and an extrinsic base region extending from the intrinsic base region, wherein the extrinsic base region is configured to conduct base current between a base contact and the intrinsic base region, wherein the intrinsic base region separates the extrinsic base region from the emitter region, wherein the intrinsic base region separates the extrinsic base region from the collector region, and wherein the emitter region, the base region, and the collector region are included in the bipolar transistor; and
a charge control structure disposed adjacent a base-collector interface, wherein the charge control structure comprises an electrode adjacent to and dielectrically isolated from the base and collector regions, wherein the charge control structure is dielectrically isolated from a bulk region, wherein the extrinsic base region overlaps in plan view above at least a portion of the charge control structure; and
wherein the charge control structure is positioned sufficiently close to the base-collector interface such that a voltage applied to the electrode creates an electric field that reduces variations in a base-collector depletion width that occur responsive to changes in base-collector voltage when the base region is reverse biased with respect to the collector region.
2. A bipolar transistor as claimed in claim 1 in which the electrode comprises a doped semiconductor region.
3. A bipolar transistor as claimed in claim 1 in which the electrode surrounds the intrinsic base region and at least part of the collector region.
4. A bipolar transistor as claimed in claim 1 , in which the charge control structure is positioned within a first distance from an edge of the intrinsic base region of the bipolar transistor such that an effective width of the intrinsic base region is substantially invariant over a 40 Volt range for a collector-emitter voltage when the base region is reverse biased with respect to the collector region, wherein the effective width is based on a width of the intrinsic base region and the base-collector depletion width.
5. A bipolar transistor as claimed in claim 4 , further comprising insulating walls surrounding the bulk region and configured to electrically isolate the bipolar transistor, wherein the charge control structure is positioned within the insulating walls, and wherein at the charge control structure is separated from the insulating walls by an area comprising silicon.
6. A bipolar transistor as claimed in claim 1 in which a dielectric wall extends around the base region of the bipolar transistor, the dielectric wall causing the dielectric isolation of the electrode from the base and collector regions.
7. A bipolar transistor as claimed in claim 6 in which the bipolar transistor is formed on a first side of the dielectric wall, and the electrode is formed on a second side of the dielectric wall, wherein the dielectric wall extends to a dielectric layer at a bottom of the bipolar transistor.
8. A bipolar transistor as claimed in claim 7 in which a second dielectric wall is provided such that the electrode is bounded by the first and second dielectric walls such that the electrode is dielectrically isolated from a semiconductor well delimited by the second dielectric wall.
9. A bipolar transistor as claimed in claim 1 in which the electrode is connected to a bias node arranged to provide a voltage to the electrode.
10. A bipolar transistor as claimed in claim 1 in which the bipolar transistor is a vertical bipolar transistor, and wherein the vertical bipolar transistor is elongate so as to allow the collector region to be brought to a connector plane of the vertical bipolar transistor.
11. A bipolar transistor as claimed in claim 1 , in which the charge control structure comprises a doped region of semiconductor of opposite conductivity type to the collector region.
12. A bipolar transistor as claimed in claim 1 , in which the electrode of the charge control structure comprises doped polysilicon having a boundary extending perpendicular to the base-collector interface.
13. A bipolar transistor as claimed in claim 1 in which the extrinsic base region is located on a side of the intrinsic base region, the extrinsic base region extending further away from the emitter region than the intrinsic base region extends away from the emitter region along a direction substantially parallel to a top layer of the bipolar transistor.
14. A bipolar transistor as claimed in claim 1 wherein:
an insulating wall surrounds the bipolar transistor in plan view;
the electrode is dielectrically isolated from the base and collector regions by dielectric sidewalls;
a first portion of the charge control structure extends substantially parallel to an axis extending from the base region to the collector region along a length of the axis between the base region to the collector region;
a second portion of the charge control structure extends substantially parallel to the axis along the length of the axis between base region to the collector region;
the bipolar transistor is a vertical bipolar transistor;
the first and second portions of the charge control structure runs along opposite sides of the axis;
the charge control structure is at least as long as a distance from the base region to the collector region; and
the charge control structure extends vertically.
15. A bipolar transistor as claimed in claim 1 , wherein the charge control structure is configured to influence a base-collector depletion region of the bipolar transistor.
16. A bipolar transistor as claimed in claim 1 , further comprising:
a second collector region of the bipolar transistor,
wherein the collector region and the second collector region are positioned on opposite sides of the emitter region.
17. An integrated circuit or an amplifier comprising a vertical bipolar transistor with reduced variation in effective base width as collector voltage changes, wherein the vertical bipolar transistor comprises:
an emitter region of a first conductivity type;
a base region of a second conductivity type, the base region comprising: an intrinsic base region and an extrinsic base region extending from the intrinsic base region;
a collector region of the first conductivity type; and
a charge control structure disposed adjacent a base-collector interface, wherein the charge control structure comprises an electrode adjacent to and dielectrically isolated from the base and collector regions, wherein the charge control structure is dielectrically isolated from a substrate over which the vertical bipolar transistor is disposed, wherein the extrinsic base region overlaps above at least a portion of the charge control structure in plan view, and wherein the charge control structure is positioned sufficiently close to the base-collector interface such that a voltage applied to the electrode creates an electric field that reduces variations in a base-collector depletion width when the base region is reverse biased with respect to the collector region.
18. An integrated circuit or amplifier as claimed in claim 17 comprising the integrated circuit, wherein a charge pump or other voltage translation device is provided in the integrated circuit to bias the charge control structure to a bias voltage outside of voltage range bounded by supply voltage rails provided to the integrated circuit.
19. An integrated circuit or amplifier as claimed in claim 17 , wherein the first conductivity type is p-type and the second conductivity type is n-type such that the vertical bipolar transistor in a PNP transistor.
20. A bipolar transistor with reduced variation in collector current as collector voltage changes, comprising:
an emitter region of the bipolar transistor, the emitter region coupled to a via that extends from the emitter region to a top layer of the bipolar transistor;
a base region of the bipolar transistor, the base region comprising an intrinsic base region and an extrinsic base region;
a collector region of the bipolar transistor, wherein the bipolar transistor comprises a base-collector junction;
a charge control structure positioned such that the extrinsic base region overlaps above at least a part of the charge control structure, wherein the charge control structure comprises an electrode dielectrically isolated from the base and collector regions, wherein the charge control structure is dielectrically isolated from a bulk region, and wherein an insulating wall surrounds the bipolar transistor in plan view.
21. The bipolar transistor of claim 20 , further comprising a base contact coupled to the extrinsic base region;
wherein the extrinsic base region is configured to conduct base current between the base contact and the intrinsic base region;
wherein the intrinsic base region is configured to conduct current between the emitter region and the collector region;
wherein the intrinsic base region separates the extrinsic base region from the emitter region; and
wherein the intrinsic base region separates the extrinsic base region from the collector region.
22. The bipolar transistor of claim 20 , wherein the charge control structure is positioned sufficiently close to the base-collector junction to such that variations in a base-collector depletion region that occur responsive to a change in a base-collector voltage are reduced when the base region is reverse biased with respect to the collector region.