Intelligent electronic device having a memory structure for preventing data loss upon power loss

1. An intelligent electronic device comprising:

at least one sensor configured for sensing at least one electrical parameter distributed to a load;

at least one analog-to-digital converter coupled to the at least one sensor and configured for converting an analog signal output from the at least one sensor to a digital data; and

a processing unit coupled to the at least one analog-to-digital converter configured to receive the digital data, calculate energy consumed by the load and accumulate the calculated energy in a first volatile memory;

the processing unit being configured to iteratively copy the accumulated energy from the first volatile memory to a first non-volatile memory after a first predetermined time period and iteratively copy the accumulated energy from the first volatile memory to a second non-volatile memory after a second predetermined time period, wherein the first predetermined time period is longer than the second predetermined time period, and

wherein the second non-volatile memory is configured to retain the accumulated energy in a power loss without use of a battery and is configured to be written to by a single-cycle write.

2. The device of claim 1 , wherein the processing unit is further configured to copy the accumulated energy from the second non-volatile memory to the first volatile memory upon a power up of the intelligent electronic device after a power loss or reset of the intelligent electronic device such that contents of the first volatile memory are restored to a similar state just prior to the power loss or reset.

3. The device as in claim 2 , wherein the first non-volatile memory is a flash memory.

4. The device as in claim 3 , wherein the second non-volatile memory is a ferroelectric random access memory (FRAM).

5. The device as in claim 3 , wherein the second non-volatile memory is a magnetoresistive random access memory (MRAM).

6. The device as in claim 2 , wherein the first non-volatile memory is removable.

7. The device as in claim 2 , wherein the first predetermined time period is about one minute.

8. The device as in claim 7 , wherein the second predetermined time period is about 0.2 seconds.

9. The device as in claim 1 , further comprising a housing.

10. The device as in claim 9 , wherein the housing is at least one of a socket-based housing, an A-based housing, a panel meter housing and a switchboard meter housing.

11. The device as in claim 1 , wherein the second non-volatile memory includes at least 10 billion read/write operations.

12. The device in claim 1 , wherein the second non-volatile memory can retain the accumulated energy for at least 10 years.

13. A method for preventing loss of data in an intelligent electronic device, the method comprising:

sensing at least one electrical parameter distributed to a load;

converting an analog signal output from the at least one sensor to a digital data;

calculating energy consumed by the load and accumulating the calculated energy in a first volatile memory;

iteratively copying the accumulated energy from the first volatile memory to a first non-volatile memory after a first predetermined time period; and

iteratively copying the accumulated energy from the first volatile memory to a second non-volatile memory after a second predetermined time period, wherein the first predetermined time period is longer than the second predetermined time period, and wherein the second non-volatile memory is configured to retain the accumulated energy in a power loss without use of a battery and is configured to be written to by a single-cycle write.

14. The method of claim 13 , further comprising copying the accumulated energy from the second non-volatile memory to the first volatile memory upon a power up of the intelligent electronic device after a power loss or reset of the intelligent electronic device such that contents of the first volatile memory are restored to a similar state just prior to the power loss or reset.

15. The method as in claim 14 , wherein the first non-volatile memory is a flash memory.

16. The method as in claim 15 , wherein the second non-volatile memory is a ferroelectric random access memory (FRAM).

17. The method as in claim 15 , wherein the second non-volatile memory is a magnetoresistive random access memory (MRAM).

18. The method as in claim 14 , wherein the first non-volatile memory is removable.

19. The method as in claim 14 , wherein the first predetermined time period is about one minute.

20. The method as in claim 19 , wherein the second predetermined time period is about 0.2 seconds.

21. An intelligent electronic device comprising:

at least one sensor configured for sensing at least one electrical parameter distributed to a load;

at least one analog-to-digital converter coupled to the at least one sensor and configured for converting an analog signal output from the at least one sensor to a digital data; and

a processing unit coupled to the at least one analog-to-digital converter configured to receive the digital data, calculate energy consumed by the load and accumulate the calculated energy in a first volatile memory;

the processing unit being configured to iteratively copy the accumulated energy from the first volatile memory to a first non-volatile memory after a first predetermined time period and iteratively copy the accumulated energy from the first volatile memory to a second non-volatile memory after a second predetermined time period, wherein the first predetermined time period is longer than the second predetermined time period,

wherein the second non-volatile memory includes a first buffer and a second buffer and the processing unit is configured to alternate between copying the accumulated energy to the first buffer and the second buffer after the second predetermined time period, and

wherein the second non-volatile memory is configured to retain the accumulated energy in a power loss without use of a battery and is configured to be written to by a single-cycle write.

22. The device in claim 20 , wherein the second non-volatile memory can retain the accumulated energy for at least 10 years.

23. The device in claim 21 , wherein the second non-volatile memory includes at least 10 billion read/write operations.

24. The device in claim 21 , further comprises at least one upgradable input and output (I/O) interface device.

25. The device in claim 24 , wherein the I/O interface device reports data via Ethernet protocol using an IEC 61850 protocol.

26. The device of claim 21 , wherein the processing unit is further configured to copy the accumulated energy from the second non-volatile memory to the first volatile memory upon a power up of the intelligent electronic device after a power loss or reset of the intelligent electronic device such that contents of the first volatile memory are restored to a similar state just prior to the power loss or reset.

27. The device as in claim 21 , wherein the first non-volatile memory is a flash memory.

28. The device as in claim 21 , wherein the first non-volatile memory is removable.

29. The device as in claim 28 , wherein the second non-volatile memory is at least one of a ferroelectric random access memory (FRAM) and/or a magnetoresistive random access memory (MRAM).

30. The device as in claim 21 , wherein the first predetermined time period is about one minute.

31. The device as in claim 30 , wherein the second predetermined time period is about 0.2 seconds.

32. The device as in claim 21 , further comprising a housing, wherein the housing is at least one of a socket-based housing, an A-based housing, a panel meter housing and a switchboard meter housing.

33. An intelligent electronic device comprising:

at least one sensor configured for sensing at least one electrical parameter distributed to a load;

at least one analog-to-digital converter coupled to the at least one sensor and configured for converting an analog signal output from the at least one sensor to a digital data; and

a processing unit coupled to the at least one analog-to-digital converter configured to receive the digital data, calculate energy consumed by the load and accumulate the calculated energy in a volatile memory;

the processing unit being configured to iteratively copy the accumulated energy from the volatile memory to a non-volatile memory after a predetermined time period,

wherein the non-volatile memory includes a first buffer and a second buffer and the processing unit is configured to alternate between copying the accumulated energy to the first buffer and the second buffer after the predetermined time period and the non-volatile memory is configured to retain the accumulated energy in a power loss without use of a battery and is configured to be written to by a single-cycle write.

34. The device of claim 33 , wherein the processing unit is further configured to copy the accumulated energy from the non-volatile memory to the volatile memory upon a power up of the intelligent electronic device after a power loss or reset of the intelligent electronic device such that contents of the volatile memory are restored to a similar state just prior to the power loss or reset.

35. The device as in claim 33 , wherein the non-volatile memory is removable.

36. The device as in claim 33 , wherein the non-volatile memory is a ferroelectric random access memory (FRAM).

37. The device as in claim 33 , wherein the non-volatile memory is a magnetoresistive random access memory (MRAM).

38. The device as in claim 33 , wherein the predetermined time period is about 0.2 seconds.

39. The device as in claim 33 , further comprising a housing, wherein the housing is at least one of a socket-based housing, an A-based housing, a panel meter housing and a switchboard meter housing.

40. The device in claim 33 , wherein the non-volatile memory can retain the accumulated energy for at least 10 years.

41. The device in claim 33 , wherein the non-volatile memory includes at least 10 billion read/write operations.

42. The device in claim 33 , further comprises at least one upgradable input and output (I/O) interface device, wherein the I/O interface device reports data via Ethernet protocol using an IEC 61850 protocol.

43. The device as in claim 33 , wherein the non-volatile memory is flash memory.

44. An intelligent electronic device comprising:

at least one sensor configured for sensing at least one electrical parameter distributed to a load;

at least one analog-to-digital converter coupled to the at least one sensor and configured for converting an analog signal output from the at least one sensor to a digital data; and

a processing unit coupled to the at least one analog-to-digital converter configured to receive the digital data, calculate energy consumed by the load and accumulate the calculated energy in a volatile memory;

the processing unit being configured to iteratively copy the accumulated energy from the volatile memory to a non-volatile memory after a predetermined time period,

wherein the non-volatile memory is configured to retain the accumulated energy in a power loss without use of a battery and is configured to be written to by a single- cycle write and the processing unit is further configured to copy the accumulated energy from the non-volatile memory to the volatile memory upon a power up of the intelligent electronic device after a power loss or reset of the intelligent electronic device such that contents of the volatile memory are restored to a similar state just prior to the power loss or reset.

45. The device as in claim 44 , wherein the non-volatile memory is removable.

46. The device as in claim 44 , wherein the non-volatile memory is at least one of a ferroelectric random access memory (FRAM) and/or a magnetoresistive random access memory (MRAM).

47. The device as in claim 44 , wherein the predetermined time period is about 0.2 seconds.

48. The device as in claim 44 , further comprising a housing, wherein the housing is at least one of a socket-based housing, an A-based housing, a panel meter housing and a switchboard meter housing.

49. The device in claim 44 , wherein the non-volatile memory can retain the accumulated energy for at least 10 years.

50. The device in claim 44 , wherein the non-volatile memory includes at least 10 billion read/write operations.