Non-destructive leaching depth measurement using capacitance spectroscopy

1. A method of characterizing a quality of a polycrystalline diamond compact cutter, the method comprising:

obtaining the polycrystalline diamond compact cutter, the polycrystalline diamond compact cutter comprising a leached layer and an unleached layer, the unleached layer positioned adjacent to the leached layer, the leached layer having at least a portion of a catalyst material removed from therein;

measuring capacitance values of the polycrystalline diamond compact cutter at multiple frequencies of an electrical signal, the electrical signal provided to the polycrystalline diamond compact cutter by a capacitance meter,

wherein each capacitance value of the capacitance values is measured at a respective frequency of the multiple frequencies of the electrical signal;

selecting a lowest capacitance value from among the measured capacitance values; and

determining, using capacitance to leaching depth mapping information, a leaching depth value that corresponds to the selected lowest capacitance value,

wherein the leaching depth value is an estimate of an actual depth of the leached layer of the polycrystalline diamond compact cutter.

2. The method of claim 1 , further comprising:

obtaining a plurality of sample polycrystalline diamond compact cutters;

measuring capacitance values of each sample cutter at the multiple frequencies of the electrical signal;

cutting each sample cutter o expose a cross-sectional surface of a leached layer of each sample cutter;

measuring, using a distance measuring tool, an actual depth of the leached layer of each sample cutter; and

generating the leaching depth mapping information by associating, for each particular sample cutter, a lowest capacitance value of the capacitance values of the particular sample cutter with the actual leaching depth of the leached layer of the particular sample cutter.

3. The method of claim 2 , wherein obtaining the leaching depth mapping information further comprises polishing the cross-sectional surface of the leached layer of each sample cutter prior to measuring the actual depth of the leached layer of each sample cutter.

4. The method of claim 1 , further comprising cleaning the leached layer of the polycrystalline diamond compact cutter to remove one or more by-product materials deposited within the leached layer during a leaching process that forms the leached layer.

5. The method of claim 1 , wherein the multiple frequencies of the electrical signal range between approximately 0 Hertz and approximately 10 Megahertz.

6. A method of characterizing a quality of a polycrystalline structure, the method comprising:

obtaining a leached component comprising the polycrystalline structure, the polycrystalline structure comprising a leached layer and an unleached layer, the unleached layer positioned adjacent to the leached layer, the leached layer having at least a portion of a catalyst material removed from therein;

measuring capacitance values of the leached component at multiple frequencies of an electrical signal, the electrical signal provided to the leached component by a capacitance measuring device,

wherein each capacitance value of the capacitance values is measured at a respective frequency of the multiple frequencies of the electrical signal;

selecting a lowest capacitance value from among the measured capacitance values; and

identifying an actual leaching depth value that corresponds to the selected lowest capacitance value using capacitance to leaching depth mapping information,

wherein a depth of the leached layer of the leached component is estimated to equal the leaching depth value.

7. The method of claim 6 , wherein the multiple frequencies of the electrical signal range between approximately 0 Hertz and approximately 10 Megahertz.

8. The method of claim 6 , further comprising generating the leaching depth mapping information by:

obtaining sample leached components;

measuring capacitance values of each sample at the multiple frequencies of the electrical signal;

cutting each sample to expose a cross-sectional surface of a leached layer thereof;

measuring, using a distance measuring tool, an actual depth of the leached layer of each sample; and

generating the leaching depth mapping information by associating, for each sample, a lowest capacitance value of the capacitance values of the particular sample with the actual leaching depth of the leached layer of the particular sample.

9. A system for measuring capacitance of a polycrystalline diamond compact cutter, the system comprising:

a capacitance measuring device comprising a first terminal and a second terminal;

the polycrystalline diamond compact cutter having a leached layer and an unleached layer adjacent to the leached layer, the leached layer having at least a portion of a catalyst material removed from therein;

a first wire for electrically coupling the first terminal to a first surface of the polycrystalline diamond compact cutter; and

a second wire for electrically coupling the second terminal to a second surface of the polycrystalline diamond compact cutter, the first surface and the second surface being on opposite sides of the leached layer and the first surface being a surface of the leached layer;

a press for firmly engaging the wires with the respective surfaces to form a circuit,

wherein the capacitance measuring device is operable to:

provide an electrical signal to the polycrystalline diamond compact cutter to measure capacitance values of the polycrystalline diamond compact cutter,

measure the capacitance values of the polycrystalline diamond compact cutter at multiple frequencies of the electrical signal,

select a lowest capacitance value from anion, the measured capacitance values, and

determine a leaching depth value that corresponds to the selected lowest capacitance value using capacitance to leaching depth mapping information.

10. The system of claim 9 , further comprising:

a first cap coupled to the first surface of the polycrystalline diamond compact cutter; and

a second cap coupled to the second surface of the polycrystalline diamond compact cutter, wherein a portion of the polycrystalline diamond compact cutter including the second surface is positioned in a cavity of the second cap,

wherein the first wire is electrically coupled to the first cap, and

wherein the second wire is electrically coupled to the second cap.

11. The system of claim 10 , wherein the first cap has an electrically conductive surface and an electrically insulated surface.

12. The system of claim 11 , wherein the electrically conductive surface of the first cap is in physical contact with the first surface of the polycrystalline diamond compact cutter.

13. The system of claim 12 , wherein the electrically conductive surface of the first cap has a ring shape.

14. The system of claim 9 , wherein the multiple frequencies of the electrical signal range between approximately 0Hertz and approximately 10 Megahertz.