Integrated AMR magnetoresistor with a set/reset coil having a stretch positioned between a magnetoresistive strip and a concentrating region
An integrated magnetoresistive sensor of an AMR (Anisotropic Magneto Resistance) type, formed by a magnetoresistive strip of ferromagnetic material and having an elongated shape with a preferential magnetization direction. A set/reset coil has a stretch, which extends over and transversely to the magnetoresistive strip. A concentrating region, also of ferromagnetic material, extends over the stretch of the set/reset coil so as to form a magnetic circuit for the field generated by the set/reset coil during steps of refresh and maintenance of magnetization of the magnetoresistive coil.
1. An integrated anisotropic magnetoresistance (AMR) magnetoresistive sensor, comprising:
a magnetoresistor including a magnetoresistive strip with an elongated shape and having an easy axis and a magnetization direction parallel to the easy axis;
a set/reset coil having a stretch extending transversely to the magnetoresistive strip; and
a concentrating region of ferromagnetic material having an elongated shape and a length-to-width ratio of at least 5:1,
wherein the concentrating region extends lengthwise parallel to a lengthwise dimension of the magnetoresistive strip and transversely with respect to a lengthwise dimension of the stretch of the set/reset coil, and
wherein the magnetoresistive strip and the concentrating region extend over opposite sides of the stretch of the set/reset coil.
2. The magnetoresistive sensor according to claim 1 , wherein the concentrating region is of soft ferromagnetic material.
3. The magnetoresistive sensor according to claim 1 , further comprising a pair of magnetic vias extending between end portions of the magnetoresistive strip and of the concentrating region and laterally surrounding the stretch of the set/reset coil, the magnetoresistive strip, the concentrating region, and the magnetic vias forming a closed magnetic circuit.
4. The magnetoresistive sensor according to claim 1 , further comprising:
a semiconductor substrate;
an insulating region on the semiconductor substrate, wherein magnetoresistive strip, set/reset coil, and concentrating region are positioned in the insulating region; the stretch of the set/reset coil extends directly over the magnetoresistive strip; and the concentrating region extends directly over the stretch of the set/reset coil.
5. The magnetoresistive sensor according to claim 1 , wherein the concentrating region comprises a plurality of concentration strips extending directly over the magnetoresistive strip, parallel to each other and to the magnetoresistive strip.
6. The magnetoresistive sensor according to claim 1 , wherein:
the magnetoresistor is part of first and second pairs of magnetoresistors, each magnetoresistor including a respective magnetoresistive strip with an elongated shape and having an anisotropic magnetization direction;
the concentrating region is part of two pairs of concentrating regions, each concentrating region extending over or underneath a respective one of the magnetoresistive strips; and
the set/reset coil is arranged vertically between the pairs of magnetoresistors and the respective concentrating regions.
7. The magnetoresistive sensor according to claim 6 , wherein:
the magnetoresistive strips of the pairs of magnetoresistors are coplanar, extend parallel to each other and are connected in bridge configuration; and
the set/reset coil has first and second stretches, parallel to each other and extending transversely to the magnetoresistive strips and to the concentrating regions, the first stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the first pair of magnetoresistors, and the second stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the second pair of magnetoresistors.
8. An integrated anisotropic magnetoresistance (AMR) sensor, comprising:
first and second pairs of magnetoresistors, each magnetoresistor including a respective magnetoresistive strip with an elongated shape and having an anisotropic magnetization direction;
two pairs of concentrating regions, each concentrating region extending over or underneath a respective one of the magnetoresistive strips; and
a single set/reset coil arranged vertically between the pairs of magnetoresistors and the respective concentrating regions, wherein:
the magnetoresistive strips of the pairs of magnetoresistors are coplanar, extend parallel to each other and are connected in bridge configuration; and
the set/reset coil has first and second stretches, parallel to each other and extending transversely to the magnetoresistive strips and to the concentrating regions, the first stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the first pair of magnetoresistors, and the second stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the second pair of magnetoresistors.
9. The integrated sensor according to claim 8 , further comprising a pair of magnetic vias extending between end portions of one of the magnetoresistive strips and of one of the concentrating regions and laterally surrounding the stretch of the set/reset coil, the one of the magnetoresistive strips, the one of the concentrating regions, and the magnetic vias forming a closed magnetic circuit.
10. The integrated sensor according to claim 8 , further comprising:
a semiconductor substrate; and
an insulating region on the semiconductor substrate, wherein magnetoresistive strips, set/reset coil, and concentrating regions are positioned in the insulating region.
11. The integrated sensor according to claim 8 , wherein each concentrating region comprises a plurality of concentration strips extending over a corresponding one of the magnetoresistive strips, parallel to each other and to the magnetoresistive strip.
12. An integrated anisotropic magnetoresistance (AMR) magnetoresistive sensor, comprising:
a magnetoresistor including a magnetoresistive strip having an elongated shape, an easy axis, and a magnetization direction parallel to the easy axis;
a set/reset coil having a stretch extending lengthwise transversely to a lengthwise dimension of the magnetoresistive strip; and
a concentrating region of ferromagnetic material extending lengthwise transversely to the lengthwise dimension of the stretch,
wherein the stretch of the set/reset coil extends between the magnetoresistive strip and the concentrating region, and
wherein the concentrating region has a length-to-width ratio of at least 5:1.
13. The magnetoresistive sensor according to claim 12 , wherein the concentrating region is of hard magnetic material.
14. The magnetoresistive sensor according to claim 12 , further comprising a pair of magnetic vias extending between end portions of the magnetoresistive strip and of the concentrating region and laterally surrounding the stretch of the set/reset coil, the magnetoresistive strip, the concentrating region, and the magnetic vias forming a closed magnetic circuit.
15. The magnetoresistive sensor according to claim 12 , further comprising:
a semiconductor substrate;
an insulating region on the semiconductor substrate, wherein magnetoresistive strip, set/reset coil, and concentrating region are positioned in the insulating region; the stretch of the set/reset coil extends over the magnetoresistive strip; and the concentrating region extends over the stretch of the set/reset coil.
16. The magnetoresistive sensor according to claim 12 , wherein the concentrating region comprises a plurality of concentration strips extending over the magnetoresistive strip, parallel to each other and to the magnetoresistive strip.
17. The magnetoresistive sensor according to claim 12 , wherein:
the magnetoresistor is part of first and second pairs of magnetoresistors, each magnetoresistor including a respective magnetoresistive strip with an elongated shape and having an anisotropic magnetization direction;
the concentrating region is part of two pairs of concentrating regions, each concentrating region extending over or underneath a respective one of the magnetoresistive strips; and
the set/reset coil is arranged vertically between the pairs of magnetoresistors and the respective concentrating regions.
18. The magnetoresistive sensor according to claim 17 , wherein:
the magnetoresistive strips of the pairs of magnetoresistors are coplanar, extend parallel to each other and are connected in bridge configuration; and
the set/reset coil has first and second stretches, parallel to each other and extending transversely to the magnetoresistive strips and to the concentrating regions, the first stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the first pair of magnetoresistors, and the second stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the second pair of magnetoresistors.