IP Library Granted Patent US 9,766,304
Granted Patent B2
US 9,766,304 · App. 14/287,798 · Granted Sep 19, 2017

Integrated AMR magnetoresistor with a set/reset coil having a stretch positioned between a magnetoresistive strip and a concentrating region

Inventor: Dario Paci (Sedrano, IT)
Assignee: STMicroelectronics S.r.l.
G01R33/096G01R33/0011H01L27/22H01L43/02
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Quick Facts
Patent No.
US 9,766,304
App. No.
14/287,798
Granted
Sep 19, 2017
Kind
B2
Abstract

An integrated magnetoresistive sensor of an AMR (Anisotropic Magneto Resistance) type, formed by a magnetoresistive strip of ferromagnetic material and having an elongated shape with a preferential magnetization direction. A set/reset coil has a stretch, which extends over and transversely to the magnetoresistive strip. A concentrating region, also of ferromagnetic material, extends over the stretch of the set/reset coil so as to form a magnetic circuit for the field generated by the set/reset coil during steps of refresh and maintenance of magnetization of the magnetoresistive coil.

Claims (49)

1. An integrated anisotropic magnetoresistance (AMR) magnetoresistive sensor, comprising:

a magnetoresistor including a magnetoresistive strip with an elongated shape and having an easy axis and a magnetization direction parallel to the easy axis;

a set/reset coil having a stretch extending transversely to the magnetoresistive strip; and

a concentrating region of ferromagnetic material having an elongated shape and a length-to-width ratio of at least 5:1,

wherein the concentrating region extends lengthwise parallel to a lengthwise dimension of the magnetoresistive strip and transversely with respect to a lengthwise dimension of the stretch of the set/reset coil, and

wherein the magnetoresistive strip and the concentrating region extend over opposite sides of the stretch of the set/reset coil.

2. The magnetoresistive sensor according to claim 1 , wherein the concentrating region is of soft ferromagnetic material.

3. The magnetoresistive sensor according to claim 1 , further comprising a pair of magnetic vias extending between end portions of the magnetoresistive strip and of the concentrating region and laterally surrounding the stretch of the set/reset coil, the magnetoresistive strip, the concentrating region, and the magnetic vias forming a closed magnetic circuit.

4. The magnetoresistive sensor according to claim 1 , further comprising:

a semiconductor substrate;

an insulating region on the semiconductor substrate, wherein magnetoresistive strip, set/reset coil, and concentrating region are positioned in the insulating region; the stretch of the set/reset coil extends directly over the magnetoresistive strip; and the concentrating region extends directly over the stretch of the set/reset coil.

5. The magnetoresistive sensor according to claim 1 , wherein the concentrating region comprises a plurality of concentration strips extending directly over the magnetoresistive strip, parallel to each other and to the magnetoresistive strip.

6. The magnetoresistive sensor according to claim 1 , wherein:

the magnetoresistor is part of first and second pairs of magnetoresistors, each magnetoresistor including a respective magnetoresistive strip with an elongated shape and having an anisotropic magnetization direction;

the concentrating region is part of two pairs of concentrating regions, each concentrating region extending over or underneath a respective one of the magnetoresistive strips; and

the set/reset coil is arranged vertically between the pairs of magnetoresistors and the respective concentrating regions.

7. The magnetoresistive sensor according to claim 6 , wherein:

the magnetoresistive strips of the pairs of magnetoresistors are coplanar, extend parallel to each other and are connected in bridge configuration; and

the set/reset coil has first and second stretches, parallel to each other and extending transversely to the magnetoresistive strips and to the concentrating regions, the first stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the first pair of magnetoresistors, and the second stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the second pair of magnetoresistors.

8. An integrated anisotropic magnetoresistance (AMR) sensor, comprising:

first and second pairs of magnetoresistors, each magnetoresistor including a respective magnetoresistive strip with an elongated shape and having an anisotropic magnetization direction;

two pairs of concentrating regions, each concentrating region extending over or underneath a respective one of the magnetoresistive strips; and

a single set/reset coil arranged vertically between the pairs of magnetoresistors and the respective concentrating regions, wherein:

the magnetoresistive strips of the pairs of magnetoresistors are coplanar, extend parallel to each other and are connected in bridge configuration; and

the set/reset coil has first and second stretches, parallel to each other and extending transversely to the magnetoresistive strips and to the concentrating regions, the first stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the first pair of magnetoresistors, and the second stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the second pair of magnetoresistors.

9. The integrated sensor according to claim 8 , further comprising a pair of magnetic vias extending between end portions of one of the magnetoresistive strips and of one of the concentrating regions and laterally surrounding the stretch of the set/reset coil, the one of the magnetoresistive strips, the one of the concentrating regions, and the magnetic vias forming a closed magnetic circuit.

10. The integrated sensor according to claim 8 , further comprising:

a semiconductor substrate; and

an insulating region on the semiconductor substrate, wherein magnetoresistive strips, set/reset coil, and concentrating regions are positioned in the insulating region.

11. The integrated sensor according to claim 8 , wherein each concentrating region comprises a plurality of concentration strips extending over a corresponding one of the magnetoresistive strips, parallel to each other and to the magnetoresistive strip.

12. An integrated anisotropic magnetoresistance (AMR) magnetoresistive sensor, comprising:

a magnetoresistor including a magnetoresistive strip having an elongated shape, an easy axis, and a magnetization direction parallel to the easy axis;

a set/reset coil having a stretch extending lengthwise transversely to a lengthwise dimension of the magnetoresistive strip; and

a concentrating region of ferromagnetic material extending lengthwise transversely to the lengthwise dimension of the stretch,

wherein the stretch of the set/reset coil extends between the magnetoresistive strip and the concentrating region, and

wherein the concentrating region has a length-to-width ratio of at least 5:1.

13. The magnetoresistive sensor according to claim 12 , wherein the concentrating region is of hard magnetic material.

14. The magnetoresistive sensor according to claim 12 , further comprising a pair of magnetic vias extending between end portions of the magnetoresistive strip and of the concentrating region and laterally surrounding the stretch of the set/reset coil, the magnetoresistive strip, the concentrating region, and the magnetic vias forming a closed magnetic circuit.

15. The magnetoresistive sensor according to claim 12 , further comprising:

a semiconductor substrate;

an insulating region on the semiconductor substrate, wherein magnetoresistive strip, set/reset coil, and concentrating region are positioned in the insulating region; the stretch of the set/reset coil extends over the magnetoresistive strip; and the concentrating region extends over the stretch of the set/reset coil.

16. The magnetoresistive sensor according to claim 12 , wherein the concentrating region comprises a plurality of concentration strips extending over the magnetoresistive strip, parallel to each other and to the magnetoresistive strip.

17. The magnetoresistive sensor according to claim 12 , wherein:

the magnetoresistor is part of first and second pairs of magnetoresistors, each magnetoresistor including a respective magnetoresistive strip with an elongated shape and having an anisotropic magnetization direction;

the concentrating region is part of two pairs of concentrating regions, each concentrating region extending over or underneath a respective one of the magnetoresistive strips; and

the set/reset coil is arranged vertically between the pairs of magnetoresistors and the respective concentrating regions.

18. The magnetoresistive sensor according to claim 17 , wherein:

the magnetoresistive strips of the pairs of magnetoresistors are coplanar, extend parallel to each other and are connected in bridge configuration; and

the set/reset coil has first and second stretches, parallel to each other and extending transversely to the magnetoresistive strips and to the concentrating regions, the first stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the first pair of magnetoresistors, and the second stretch of the set/reset coil extending vertically between the magnetoresistive strips and the respective concentrating regions of the second pair of magnetoresistors.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2022
From: STMICROELECTRONICS S.R.L.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 060301/0355 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 27, 2014
From: PACI, DARIO
To: STMICROELECTRONICS S.R.L.
Reel/Frame 033199/0058 →
Priority Claims (1)
IT TO2013A0436 · May 29, 2013 · national
Continuity (1)
Related Publication 20140353785A1 · Dec 4, 2014