Data storage device employing glitch compensation for power loss detection
View Patent ↗A data storage device is disclosed comprising a non-volatile memory powered by a supply voltage. The supply voltage is compared to a power loss threshold, and when the supply voltage falls below the power loss threshold, a power loss event is detected and an emergency operation is executed. The power loss threshold is decreased, and after an interval the power loss threshold is increased.
1. A data storage device comprising:
a non-volatile memory; and
control circuitry configured to:
receive a supply voltage for powering the non-volatile memory;
compare the supply voltage to a power loss threshold;
when the supply voltage falls below the power loss threshold:
detect a power loss event and execute an emergency operation; and
decrease the power loss threshold, and after an interval increase the power loss threshold.
2. The data storage device as recited in claim 1 , wherein after decreasing the power loss threshold the control circuitry is further configured to increase the power loss threshold in step increments over multiple intervals.
3. The data storage device as recited in claim 1 , wherein the control circuitry is further configured to detect the power loss event when the supply voltage falls below the power loss threshold in an analog domain.
4. The data storage device as recited in claim 1 , wherein the control circuitry is further configured to:
sample the supply voltage to generate supply voltage samples; and
detect the power loss event when at least one of the supply voltage samples is less than the power loss threshold in a digital domain.
5. The data storage device as recited in claim 4 , wherein the control circuitry is further configured to detect the power loss event when at least two consecutive supply voltage samples is less than the power loss threshold.
6. The data storage device as recited in claim 1 , wherein the control circuitry is further configured to:
sample the supply voltage to generate supply voltage samples; and
adjust the power loss threshold based on an average of the supply voltage samples.
7. The data storage device as recited in claim 6 , wherein the control circuitry is further configured to adjust the power loss threshold based on a standard deviation of the supply voltage samples.
8. The data storage device as recited in claim 6 , wherein the control circuitry is further configured to adjust the power loss threshold by subtracting a standard deviation of the supply voltage samples from the average of the supply voltage samples.
9. The data storage device as recited in claim 1 , wherein the non-volatile memory comprises a head actuated over a disk.
10. The data storage device as recited in claim 1 , wherein the non-volatile memory comprises a semiconductor memory.
11. A method of operating a data storage device comprising, the method comprising:
receiving a supply voltage for powering a non-volatile memory;
comparing the supply voltage to a power loss threshold;
when the supply voltage falls below the power loss threshold:
detecting a power loss event and execute an emergency operation; and
decreasing the power loss threshold, and after an interval increase the power loss threshold.
12. The method as recited in claim 11 , wherein after decreasing the power loss threshold the method further comprises increasing the power loss threshold in step increments over multiple intervals.
13. The method as recited in claim 11 , further comprising detecting the power loss event when the supply voltage falls below the power loss threshold in an analog domain.
14. The method as recited in claim 11 , further comprising:
sampling the supply voltage to generate supply voltage samples; and
detecting the power loss event when at least one of the supply voltage samples is less than the power loss threshold in a digital domain.
15. The method as recited in claim 14 , further comprising detecting the power loss event when at least two consecutive supply voltage samples is less than the power loss threshold.
16. The method as recited in claim 11 , further comprising:
sampling the supply voltage to generate supply voltage samples; and
adjusting the power loss threshold based on an average of the supply voltage samples.
17. The method as recited in claim 16 , further comprising adjusting the power loss threshold based on a standard deviation of the supply voltage samples.
18. The method as recited in claim 16 , further comprising adjusting the power loss threshold by subtracting a standard deviation of the supply voltage samples from the average of the supply voltage samples.
19. The method as recited in claim 11 , wherein the non-volatile memory comprises a head actuated over a disk.
20. The method as recited in claim 11 , wherein the non-volatile memory comprises a semiconductor memory.