Radiation image-pickup device and radiation image-pickup display system

1. A radiation image-pickup device comprising:

a drive substrate including a transistor used to read, from each of a plurality of pixels, signal charge based on radiation;

a charge collection electrode provided on the drive substrate, for each of the pixels;

a conversion layer formed on the charge collection electrode, and configured to generate the signal charge by absorbing radiation;

a counter electrode provided on the conversion layer; and

a first conductive film disposed between the drive substrate and the charge collection electrode, disposed to face at least a part of the charge collection electrode, and included in a first capacitive element configured to retain the signal charge, wherein the transistor includes

a semiconductor layer configured using poly-silicon,

a first gate electrode and a second gate electrode disposed to face each other, with the semiconductor layer interposed therebetween,

a first gate insulating film and a second gate insulating film, the first gate insulating film being formed between the semiconductor layer and the first gate electrode, and the second gate insulating film being formed between the semiconductor layer and the second gate electrode, and

a source electrode and a drain electrode electrically connected to the semiconductor layer, and

another capacitive element configured to retain the signal charge is formed in a same layer as the transistor, the other capacitive element including

a second capacitive element including a second conductive film, the semiconductor layer, and the first gate insulating film, the second conductive film being formed in a same layer as the first gate electrode, and

a third capacitive element including a third conductive film, the semiconductor layer, and the second gate insulating film, the third conductive film being formed in a same layer as the second gate electrode.

2. The radiation image-pickup device according to claim 1 , wherein

the charge collection electrode is formed over an entire region of a pixel opening, for each of the pixels, and

the first conductive film is formed to face an entire region of the charge collection electrode.

3. The radiation image-pickup device according to claim 1 , wherein

the charge collection electrode is formed over an entire region of a pixel opening, for each of the pixels, and

the first conductive film is formed to face a part of the charge collection electrode.

4. The radiation image-pickup device according to claim 3 , wherein

the transistor is connected to a readout control line and a signal line, and

the first conductive film is provided to be separated from the readout control line and the signal line, in an in-plane direction of the drive substrate.

5. The radiation image-pickup device according to claim 4 , wherein the first conductive film is a provided in a region except an electrode formation region of the transistor.

6. The radiation image-pickup device according to claim 1 , wherein the first conductive film is configured using a transparent conductive film.

7. The radiation image-pickup device according to claim 1 , wherein the radiation includes X-rays.

8. The radiation image-pickup device according to claim 1 , further comprising a flattening film on a surface of the drive substrate,

wherein the first conductive film is provided on the flattening film.

9. A radiation image-pickup display system comprising:

a radiation image-pickup device; and

a display configured to perform image display based on an image pickup signal obtained by the radiation image-pickup device,

wherein the radiation image-pickup device includes

a drive substrate including a transistor used to read, from each of a plurality of pixels, signal charge based on radiation,

a charge collection electrode provided on the drive substrate, for each of the pixels,

a conversion layer formed on the charge collection electrode, and configured to generate the signal charge by absorbing radiation,

a counter electrode provided on the conversion layer, and

a first conductive film disposed between the drive substrate and the charge collection electrode, disposed to face at least a part of the charge collection electrode, and included in a first capacitive element configured to retain the signal charge, wherein the transistor includes

a semiconductor layer configured using poly-silicon,

a first gate electrode and a second gate electrode disposed to face each other, with the semiconductor layer interposed therebetween,

a first gate insulating film and a second gate insulating film, the first gate insulating film being formed between the semiconductor layer and the first gate electrode, and the second gate insulating film being formed between the semiconductor layer and the second gate electrode, and

a source electrode and a drain electrode electrically connected to the semiconductor layer, and

another capacitive element configured to retain the signal charge is formed in a same layer as the transistor, the other capacitive element including

a second capacitive element including a second conductive film, the semiconductor layer, and the first gate insulating film, the second conductive film being formed in a same layer as the first gate electrode, and

a third capacitive element including a third conductive film, the semiconductor layer, and the second gate insulating film, the third conductive film being formed in a same layer as the second gate electrode.