Capacitive coupled resonator device with air-gap separating electrode and piezoelectric layer

1. A bulk acoustic wave (BAW) resonator, comprising:

a bottom electrode disposed on a substrate;

a piezoelectric layer disposed over the bottom electrode;

a top electrode disposed over the piezoelectric layer; and

a top air-gap and corresponding top support structure separating the top electrode from the piezoelectric layer, wherein the corresponding top support structure is located within the top air-gap between the top electrode and the piezoelectric layer.

2. The BAW resonator of claim 1 , wherein the top air-gap has a height less than or equal to approximately 500 Å.

3. The BAW resonator of claim 1 , wherein a main membrane region of the BAW resonator is defined by overlapping portions of the bottom electrode, the piezoelectric layer, the top electrode, and the top air-gap.

4. The BAW resonator of claim 1 , further comprising:

a cavity formed in the substrate,

wherein the bottom electrode is formed on a top surface of the substrate over the cavity.

5. The BAW resonator of claim 1 , wherein the corresponding top support structure comprises a support pillar formed in the top air-gap to provide structural support to the top electrode.

6. The BAW resonator of claim 1 , further comprising:

a bottom air-gap and corresponding bottom support structure separating the bottom electrode from the piezoelectric layer.

7. The BAW resonator of claim 6 , wherein the top and bottom air-gaps have approximately the same heights.

8. A bulk acoustic wave (BAW) resonator, comprising:

a bottom electrode disposed on a substrate;

a piezoelectric layer disposed over the bottom electrode;

a top electrode disposed over the piezoelectric layer; and

at least one air-gap and corresponding support structure, the at least one air-gap separating at least one of the bottom electrode and the top electrode from the piezoelectric layer, respectively, and the corresponding support structure comprising a support frame defining an opening corresponding to the at least one air-gap, wherein the at least one of the bottom electrode and the top electrode is formed on the support frame.

9. A bulk acoustic wave (BAW) resonator, comprising:

a bottom electrode disposed on a substrate;

a piezoelectric layer disposed over the bottom electrode;

a top electrode disposed over the piezoelectric layer; and

at least one support pillar formed in a bottom air-gap, and configured to maintain a height of the bottom air-gap,

wherein the bottom electrode is separated from the piezoelectric layer by the bottom air-gap and supported by the at least one support pillar, and the top electrode is formed on a top surface of the piezoelectric layer.

10. The BAW resonator of claim 9 , further comprising:

an air-bridge and an air-wing formed between the piezoelectric layer and the top electrode.

11. A bulk acoustic wave (BAW), comprising:

a bottom electrode disposed on a substrate;

a piezoelectric layer disposed over the bottom electrode;

a top electrode disposed over the piezoelectric layer; and

at least one support pillar formed in at least one of a bottom air-gap and a top air-gap, and configured to maintain a height of the corresponding at least one of the bottom air-gap and the top air-gap,

wherein at least one of the bottom electrode and the top electrode is separated from the piezoelectric layer by a corresponding at least one of the bottom air-gap and the top air-gap, respectively, and is supported by the at least one support pillar,

wherein the at least one of the bottom air-gap and the top air-gap is a multiple height air-gap comprising at least a first height at a center region and second height at an edge region of the corresponding at least one of the bottom air-gap and the top air-gap, and

wherein the first height is less than the second height of each of the at least one multiple height air-gaps.

12. The BAW resonator of claim 11 , further comprising:

a cavity formed in the substrate,

wherein the top electrode is separated from the piezoelectric layer by the corresponding top air-gap and supported by the at least one support pillar, and the bottom electrode is formed on a top surface of the substrate over the cavity.

13. The BAW resonator of claim 11 , wherein both the top electrode and the bottom electrode are separated from the piezoelectric layer by the top air-gap and the bottom air-gap, respectively, and are supported by at least one top support pillar and at least one bottom support pillar, respectively.

14. The BAW resonator of claim 13 , wherein the at least one of the bottom electrode and the top electrode separated from the piezoelectric layer by the corresponding at least one of the bottom air-gap and the top air-gap, respectively, is supported by a plurality of support pillars.

15. A bulk acoustic wave (BAW) resonator, comprising:

a bottom electrode disposed on a substrate;

a piezoelectric layer disposed over the bottom electrode;

a top electrode disposed over the piezoelectric layer; and

at least one thin metal layer formed adjacent the piezoelectric layer,

wherein at least one of the bottom electrode and the top electrode is separated from the at least one thin metal layer by a corresponding at least one of a bottom air-gap and a top air-gap, respectively.

16. The BAW resonator of claim 15 , further comprising:

a plurality of support pillars formed in the at least one of the bottom air-gap and the top air-gap, the plurality of support pillars electrically shorting the at least one thin metal layer, thereby reducing voltage drop across the air-gap and increasing electromechanical coupling coefficient Kt 2 .

17. The BAW resonator of claim 15 , wherein both the top electrode and the bottom electrode are separated from the piezoelectric layer by the top air-gap and the bottom air-gap, respectively, and are supported by at least one top support pillar and at least one bottom support pillar, respectively.