Quantum cascade laser
A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction.
1. A quantum cascade laser comprising:
a semiconductor substrate including a principal surface;
a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region emitting light at a wavelength, and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and
a current blocking layer formed on a side surface of the mesa waveguide, wherein
the light emitting region includes a plurality of core regions and a plurality of buried regions that are made of materials different from materials of the core regions,
at least one of the core regions has a width in the reference direction that is less than the wavelength of light emitted from the light emitting region,
the mesa waveguide in configured to form a single waveguide in which light in the light emitting region extends in the reference direction through the core regions,
the core regions and the buried regions are alternately arranged in the reference direction,
the core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction, and
the upper cladding layer is disposed on each of the core regions and the buried regions so that current is injected into the plurality of core regions from the upper cladding layer.
2. The quantum cascade laser according to claim 1 , wherein each core region has a width in a range of 0.5 μm to 10 μm in the reference direction.
3. The quantum cascade laser according to claim 1 , wherein
each buried region has a width in a range of 0.5 μm to 10 μm the reference direction.
4. The quantum cascade laser according to claim 1 , wherein
the plurality of core regions includes a first core region and second core regions,
the first core region is arranged between the second core regions, and
each second core region has a width in a range of 0.125 times to less than 1 times a width of the first core region in the reference direction.
5. The quantum cascade laser according to claim 1 , wherein the current blocking layer is formed of an insulating film.
6. The quantum cascade laser according to claim 5 , wherein the insulating film is formed of at least one of SiO 2 , SiON, SiN, alumina, BCB resin, and polyimide resin.
7. The quantum cascade laser according to claim 1 , wherein the current blocking layer is formed of a semi-insulating semiconductor.
8. The quantum cascade laser according to claim 1 , wherein the current blocking layer is formed of InP or AlInAs doped with at least one of Fe, Ti, Cr, and Co.
9. The quantum cascade laser according to claim 1 , wherein the buried regions are formed of a semi-insulating semiconductor.
10. The quantum cascade laser according to claim 1 , wherein the buried regions are formed of InP or AlInAs doped with at least one of Fe, Ti, Cr, and Co.
11. The quantum cascade laser according to claim 1 , wherein
each of the plurality of core regions includes a plurality of active layers and a plurality of injection layers,
the plurality of active layers and the plurality of injection layers are alternately stacked on the principal surface,
each of the plurality of active layers emits light, and
each of the plurality of injection layers injects carriers into an active layer that is adjacent thereto.
12. A quantum cascade laser comprising:
a semiconductor substrate including a principal surface;
a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region emitting light at a wavelength, and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and
a current blocking layer formed on a side surface of the mesa waveguide, wherein
the light emitting region includes a plurality of core regions, and a plurality of buried regions that are made of materials different from materials of the core regions,
the core regions and the buried regions are alternately arranged in the reference direction,
the buried regions are made of a semi-insulating semiconductor having a lower refractive index than a refractive index of the core regions,
at least one of the core regions has a width in the reference direction that is less than the wavelength of light emitted from the light emitting region,
the plurality of core regions includes a first core region and second core regions,
the first core region is arranged between the second core regions,
the mesa waveguide is configured to form a single waveguide in which light in the light emitting region extends in the reference direction through the first and second core regions, and
in the reference direction, each second core region has a width in a range of 0.125 times to less than 1 times a width of the first core region.