IP Library Granted Patent US 9,911,874
Granted Patent B2
US 9,911,874 · App. 14/292,280 · Granted Mar 6, 2018

Alignment free solar cell metallization

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Quick Facts
Patent No.
US 9,911,874
App. No.
14/292,280
Granted
Mar 6, 2018
Kind
B2
Abstract

A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a contact finger coupled to the semiconductor region via a plurality of weld regions with at least one of the weld regions being a partial weld.

Claims (28)

1. A solar cell; comprising:

a substrate;

a semiconductor region disposed in or above the substrate;

a dielectric layer disposed between and laterally adjacent to respective n-type and p-type regions of the semiconductor region, a damage buffer disposed within a trench of the dielectric layer wherein the damage buffer is a laser-absorbing damage buffer, and wherein the entire uppermost surface of the damage buffer is below an uppermost surface of the semiconductor region; and

a contact finger coupled to the semiconductor region via a plurality of weld regions, wherein a first weld region of the plurality of weld regions is a partial weld formed along an outside edge of the contact finger, and wherein the plurality of weld regions includes weld regions having varying lengths.

2. The solar cell of claim 1 , wherein the plurality of weld regions are asymmetrically arranged on the contact finger.

3. The solar cell of claim 1 , further comprising a first conductive region coupled to and between the contact finger and the semiconductor region.

4. The solar cell of claim 3 , further comprising a second conductive region coupled to and between the contact finger and the first conductive region.

5. The solar cell of claim 1 , wherein the contact finger comprises a foil that includes aluminum.

6. A solar cell, comprising:

a substrate;

a semiconductor region disposed in or above the substrate;

a dielectric layer disposed between and laterally adjacent to respective n-type and p-type regions of the semiconductor region, a damage buffer disposed within a trench of the dielectric layer wherein the damage buffer is a laser-absorbing damage buffer, and wherein the entire uppermost surface of the damage buffer is below an uppermost surface of the semiconductor region; and

a contact finger coupled to the semiconductor region via a plurality of weld regions, wherein a first weld region of the plurality of weld regions is a partial weld such that the first weld region is formed along an outside edge of the contact finger, and wherein the plurality of weld regions includes weld regions having varying depths.

7. The solar cell of claim 6 , wherein the plurality of weld regions are asymmetrically arranged on the contact finger.

8. The solar cell of claim 6 , wherein at least one of the plurality of weld regions is a different length than another one of the plurality of weld regions.

9. The solar cell of claim 6 , further comprising a first conductive region coupled to and between the contact finger and the semiconductor region.

10. The solar cell of claim 9 , further comprising a second conductive region coupled to and between the contact finger and the first conductive region.

11. The solar cell of claim 6 , wherein the contact finger comprises a foil that includes aluminum.

12. A solar cell, comprising:

a substrate;

a semiconductor region disposed in or above the substrate;

a dielectric layer disposed between and laterally adjacent to respective n-type and p-type regions of the semiconductor region, a damage buffer disposed within a trench of the dielectric layer wherein the entire uppermost surface of the damage buffer is below an uppermost surface of the semiconductor region; and

a contact finger coupled to the semiconductor region via a plurality of weld regions, wherein a first weld region of the plurality of weld regions is a partial weld formed along an outside edge of the contact finger, and wherein the plurality of weld regions includes weld regions having varying lengths.

13. The solar cell of claim 12 , wherein the plurality of weld regions are asymmetrically arranged on the contact finger.

14. The solar cell of claim 12 , further comprising a first conductive region coupled to and between the contact finger and the semiconductor region.

15. The solar cell of claim 14 , further comprising a second conductive region coupled to and between the contact finger and the first conductive region.

16. The solar cell of claim 12 , wherein the contact finger comprises a foil that includes aluminum.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 8, 2025
From: TOTALENERGIES SOLAR INTL; TOTALENERGIES SE
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 073059/0122 →
SECURITY INTEREST Recorded Jun 27, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067924/0062 →
SECOND LIEN SECURITY INTEREST AGREEMENT Recorded Jun 26, 2024
From: MAXEON SOLAR PTE. LTD
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 071343/0553 →
SECURITY INTEREST Recorded Jun 5, 2024
From: MAXEON SOLAR PTE. LTD.
To: DB TRUSTEES (HONG KONG) LIMITED
Reel/Frame 067637/0598 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 24, 2023
From: SUNPOWER CORPORATION
To: MAXEON SOLAR PTE. LTD.
Reel/Frame 062699/0875 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2015
From: HARLEY, GABRIEL; KIM, TAESEOK; HSIA, BENJAMIN IAN
To: SUNPOWER CORPORATION
Reel/Frame 035643/0735 →