Seed layer for low-e applications
View Patent ↗Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. For example, by adding appropriate seed layers between the IR reflective layers and the base oxide layers, the color performance can be maintained regardless of high temperature processes. The optical filler layers can include a metal oxide layer. In some embodiments, the seed layer can include nickel, titanium, and niobium, forming a nickel titanium niobium alloy such as NiTiNb.
1. A coated article comprising
a transparent substrate;
a first layer formed above the transparent substrate,
wherein the first layer comprises silicon nitride,
wherein the first layer is operable as a lower protective layer;
an IR reflective stack formed above the first layer,
wherein the IR reflective stack comprises a base oxide layer, a seed layer, an IR reflective layer, and a barrier layer,
wherein the seed layer is formed directly on the base oxide layer,
the IR reflective layer is formed directly on the seed layer,
and the barrier layer is formed directly on the IR reflective layer,
wherein each of the seed layer and the barrier layer comprises nickel, titanium, and niobium;
a second layer formed directly on the barrier layer of the IR reflective stack,
wherein the second layer comprises zinc, tin, and oxygen,
wherein the second layer is operable as an upper oxide layer;
a third layer formed directly on the second layer,
wherein the third layer consists of zinc oxide; and
a fourth layer formed above the third layer,
wherein the fourth layer comprises silicon nitride,
wherein the fourth layer is operable as an upper protective layer.
2. A coated article as in claim 1 wherein a thickness of the second layer is between 1 and 100 nm.
3. A coated article as in claim 1 wherein a thickness of the fourth layer is between 10 and 30 nm.
4. A coated article as in claim 1 wherein the coated article has been heated after forming the fourth layer.
5. A coated article as in claim 4 wherein the transparent substrate comprises glass, and an R g ΔE* value defining a color change of the coated article after the heating is less than 3.0.
6. A coated article as in claim 1 wherein:
the base oxide layer of the IR reflective stack comprises zinc, tin, and oxygen; and
the IR reflective layer of the IR reflective stack comprises silver.
7. A low emissivity film stack comprising
a transparent substrate, wherein the transparent substrate comprises glass;
a first layer formed above the transparent substrate,
wherein the first layer is operable as a lower protective layer;
an IR reflective stack formed above the first layer,
wherein the IR reflective stack comprises a base oxide layer, a seed layer, an IR reflective layer, and a barrier layer,
wherein the seed layer is formed directly on the base oxide layer,
the IR reflective layer is formed directly on the seed layer,
and the barrier layer is formed directly on the IR reflective layer,
wherein each of the seed layer and the barrier layer comprises nickel, titanium, and niobium;
a second layer formed directly on the barrier layer of the IR reflective stack,
wherein the second layer is operable as an upper oxide layer and comprises zinc, tin, and oxygen;
a third layer formed directly on the second layer,
wherein the third layer consists of zinc oxide; and
a fourth layer formed above the third layer,
wherein the fourth layer is operable as an upper protective layer.
8. A low emissivity film stack as in claim 7 wherein a thickness of the second layer is between 0.5 and 3 nm.
9. A low emissivity film stack as in claim 7 wherein a thickness of the fourth layer is between 10 and 30 nm.
10. A low emissivity film stack as in claim 7 wherein the coated article has been heated after forming the fourth layer.
11. A low emissivity film stack as in claim 10 wherein an R g ΔE* value defining a color change of the coated article after the heating is less than 3.0.
12. A low emissivity film stack as in claim 7 wherein:
the base oxide layer of the IR reflective stack comprises zinc, tin and oxygen, and
the IR reflective layer of the IR reflective stack comprises silver.
13. A low emissivity film stack comprising:
a transparent substrate;
a lower protective layer formed directly on the transparent substrate, wherein the protective layer comprises silicon nitride, silicon oxynitride, or silicon zirconium nitride;
a base layer formed directly on the lower protective layer, wherein the base layer comprises zinc, tin, and oxygen;
a seed layer formed directly on the base layer, wherein the seed layer comprises nickel, titanium, and niobium;
a reflective layer formed directly on the seed layer, wherein the reflective layer comprises silver, gold, or copper;
a barrier layer formed directly on the reflective layer, wherein the barrier layer comprises nickel, titanium, and niobium;
an oxide layer formed directly on the barrier layer, wherein the oxide layer comprises zinc, tin, and oxygen;
an optical filler layer formed directly on the oxide layer, wherein the optical filler layer consists of zinc oxide; and
an upper protective layer formed above the optical filler layer, wherein the upper protective layer comprises silicon nitride, silicon oxynitride, titanium oxide, tin oxide, zinc oxide, niobium oxide, or silicon zirconium nitride.
14. A low emissivity film stack as in claim 13 wherein each of the seed layer and the barrier layer comprises a nickel titanium niobium metal alloy or nickel titanium niobium oxide.
15. A low emissivity film stack as in claim 14 wherein each of the seed layer and the barrier layer consist of a nickel titanium niobium metal alloy or nickel titanium niobium oxide.
16. A low emissivity film stack as in claim 15 wherein the reflective layer consists of silver, and the transparent substrate comprises glass.
17. A low emissivity film stack as in claim 16 wherein each of the base layer and the oxide layer consists of zinc tin oxide.
18. A low emissivity film stack as in claim 17 wherein each of the lower protective layer and the upper protective layer consists of silicon nitride.
19. A low emissivity film stack as in claim 18 wherein the upper protective layer is formed directly on the optical filler layer.