Method and apparatus for fabricating phosphor-coated LED dies

1. A lighting apparatus, comprising:

a first doped semiconductor layer;

a light-emitting layer disposed over the first doped semiconductor layer;

a second doped semiconductor layer disposed over the light-emitting layer, the second doped semiconductor layer having a different type of conductivity than the first doped semiconductor layer; and

a photo-conversion layer disposed over the second doped semiconductor layer and over side surfaces of the first and second doped semiconductor layers and the light-emitting layer, wherein the photo-conversion layer has an angular profile that comprises one or more angular corners disposed over the second doped semiconductor layer, wherein the one or more angular corners are defined by an upper surface and planar side surfaces of the photo-conversion layer, and wherein the upper surface and the side surfaces of the photo-conversion layer have substantially different roughness levels.

2. The lighting apparatus of claim 1 , wherein the one or more angular corners each have an angle that is in a range from about 90 degrees to about 135 degrees in a cross-sectional view.

3. The lighting apparatus of claim 1 , further comprising:

a first conductive terminal and a second conductive terminal each disposed below the first doped semiconductor layer; and

a substrate on which the first and second conductive terminals are disposed, wherein the substrate is a Metal Core Printed Circuit Board (MCPCB) substrate, a ceramic substrate, or a copper substrate.

4. The lighting apparatus of claim 3 , wherein:

the first conductive terminal is electrically coupled to the first doped semiconductor layer;

the second conductive terminal is electrically coupled to the second doped semiconductor layer;

one of the first and second doped semiconductor layers is n-doped; and

the other one of the first and second doped semiconductor layers is p-doped.

5. The lighting apparatus of claim 1 , wherein the first and second doped semiconductor layers, the light-emitting layer, and the first and second conductive terminals are parts of a light-emitting diode (LED) die.

6. The lighting apparatus of claim 5 , further comprising a lighting module on which the LED die is disposed.

7. The lighting apparatus of claim 6 , further comprising a lamp in which the lighting module is disposed.

8. The lighting apparatus of claim 1 , wherein the angular profile exists even when examined by a microscope.

9. A lighting apparatus, comprising:

a light-emitting die that includes:

a first doped semiconductor layer;

a light-emitting layer located over the first doped semiconductor layer;

a second doped semiconductor layer located over the light-emitting layer, wherein the first and second doped semiconductor layers have different types of conductivity; and

a first conductive terminal and a second conductive terminal each located below the first doped semiconductor layer; and

a phosphor layer coated around the light-emitting die, wherein the photo-conversion layer has one or more angular corners when examined by a microscope.

10. The lighting apparatus of claim 9 , wherein the one or more angular corners each have an angle that is in a range from about 90 degrees to about 135 degrees in a cross-sectional view.

11. The lighting apparatus of claim 9 , wherein the one or more angular corners are defined by an upper surface and side surfaces of the phosphor layer.

12. The lighting apparatus of claim 11 , wherein the side surfaces are substantially flatter than the upper surface of the phosphor layer.

13. The lighting apparatus of claim 9 , further comprising a substrate that is a Metal Core Printed Circuit Board (MCPCB) substrate, a ceramic substrate, or a copper substrate, wherein the first and second conductive terminals are located on an upper surface of the substrate.

14. The lighting apparatus of claim 13 , further comprising a lamp in which the substrate and the light-emitting die are implemented.

15. The lighting apparatus of claim 9 , wherein:

the first conductive terminal is electrically coupled to the first doped semiconductor layer;

the second conductive terminal is electrically coupled to the second doped semiconductor layer; and

one of the first and second doped semiconductor layers contains an n-doped III-V compound;

the other one of the first and second doped semiconductor layers contains a p-doped III-V compound; and

the light-emitting layer contains a plurality of quantum wells.

16. A lighting apparatus, comprising:

a substrate;

one or more light-emitting diode (LED) dies that are disposed over the substrate, wherein the LED dies each include:

a first doped III-V compound layer;

a multiple quantum well (MQW) layer disposed over the first doped III-V compound layer;

a second doped III-V compound layer disposed over the MQW layer, wherein the first and second doped III-V compound layers have different types of conductivity; and

one or more phosphor coatings each wrapped around a respective one of the one or more LED dies, wherein the phosphor coatings each have one or more sharp corners that are defined by an upper surface and side surfaces of the phosphor coatings, and wherein the upper surface and the side surfaces have substantially different roughness characteristics, wherein the roughness characteristics include a surface topography variation.

17. The lighting apparatus of claim 16 , wherein:

the substrate is a Metal Core Printed Circuit Board (MCPCB) substrate, a ceramic substrate, or a copper substrate; and

the one or more sharp corners each have an angle that is between about 90 degrees and about 135 degrees in a cross-sectional view.

18. The lighting apparatus of claim 16 , further comprising a lamp in which the substrate and the one or more LED dies are implemented.

19. The lighting apparatus of claim 17 , wherein the one or more sharp corners exist even when examined by a microscope.

20. The lighting apparatus of claim 16 , wherein the upper surface has a first surface topography variation of about +/−50 microns, and wherein the side surfaces have a second surface topography variation of about +/−5 microns.