Methods of fabricating polycrystalline diamond compacts
View Patent ↗Embodiments of the invention relate to methods of fabricating a polycrystalline diamond compacts and applications for such polycrystalline diamond compacts. In an embodiment, a method of fabricating a polycrystalline diamond compact includes at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid material and sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid particles to form a polycrystalline diamond table.
1. A method of fabricating a polycrystalline diamond compact, comprising:
providing an at least partially leached polycrystalline diamond body including a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions;
forming an assembly including the at least partially leached polycrystalline diamond body, a substrate, and an at least carbon-saturated infiltrant layer positioned between the at least partially leached polycrystalline diamond body, the at least carbon-saturated infiltrant layer including at least carbon-saturated material at least saturated with non-diamond carbon; and
subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate at least a portion of the plurality of interstitial regions of the at least partially leached polycrystalline diamond body with at least a portion of the at least carbon-saturated material from the at least carbon-saturated infiltrant layer.
2. The method of claim 1 wherein the at least carbon-saturated material includes carbon-supersaturated material.
3. The method of claim 1 wherein the at least carbon-saturated material includes at least one material selected from the group consisting of cobalt, nickel, iron, copper, aluminum, titanium, tungsten, niobium, zirconium, tantalum, silicon, and boron.
4. The method of claim 1 wherein the at least carbon-saturated material includes at least one member selected from the group consisting of copper particles supersaturated with the non-diamond carbon and nickel particles supersaturated with the non-diamond carbon.
5. The method of claim 1 wherein the non-diamond carbon is provided from at least one material selected from the group consisting of lamp black, graphite, carbon-12 graphite, carbon-13 graphite, carbon nanotubes, graphene, amorphous carbon, and fullerenes.
6. The method of claim 1 wherein the at least carbon saturated material includes a plurality of at least carbon-saturated material particles.
7. The method of claim 1 wherein the at least partially leached polycrystalline diamond body is formed by a process including:
at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid material;
sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid material to form a polycrystalline diamond body;
at least partially leaching the sintering aid material from the polycrystalline diamond body to form the at least partially leached polycrystalline diamond body.
8. The method of claim 7 wherein the sintering aid material includes a plurality of sintering aid particles, and wherein at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid includes supersaturating the plurality of sintering aid particles with the non-diamond carbon.
9. The method of claim 8 wherein the plurality of sintering aid particles includes at least one material selected from the group consisting of cobalt, nickel, iron, copper, aluminum, titanium, tungsten, niobium, zirconium, tantalum, silicon, and boron.
10. The method of claim 7 , further comprising:
wherein the carbon-saturated sintering aid material includes carbon-saturated sintering aid particles;
mixing the carbon-saturated sintering aid particles with the plurality of diamond particles to form a mixture;
wherein sintering a plurality of diamond particles in the presence of the carbon-saturated sintering aid material to form a polycrystalline diamond table includes subjecting the mixture to a high-pressure/high-temperature process effective to form the polycrystalline diamond body.
11. The method of claim 7 wherein at least saturating a sintering aid material with non-diamond carbon to form a carbon-saturated sintering aid material includes mechanically milling the non-diamond carbon and the sintering aid material together to form the carbon-saturated sintering aid particles.
12. The method of claim 1 wherein the substrate includes a cemented carbide substrate.
13. The method of claim 1 , prior to the act of subjecting the assembly to a high-pressure/high-temperature process, further comprising removing at least some leaching by-products from the at least partially leached polycrystalline diamond body.
14. The method of claim 1 wherein subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate at least a portion of the plurality of interstitial regions of the at least partially leached polycrystalline diamond body with at least a portion of the at least carbon-saturated material from the at least carbon-saturated infiltrant layer includes infiltrating a portion of the plurality of interstitial regions of the at least partially leached polycrystalline diamond body adjacent to the substrate with a metallic infiltrant from the substrate.
15. The method of claim 14 wherein the metallic infiltrant includes at least one of cobalt, iron, or nickel.
16. A method of fabricating a polycrystalline diamond compact, comprising:
providing an at least partially leached polycrystalline diamond body including a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions;
forming an assembly including the at least partially leached polycrystalline diamond body, a cobalt-cemented tungsten carbide substrate including a cobalt cementing constituent, and an at least carbon-saturated infiltrant material positioned between the at least partially leached polycrystalline diamond body, the at least carbon-saturated infiltrant material including at least carbon-saturated material at least saturated with non-diamond carbon; and
subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate a portion of the plurality of interstitial regions of the at least partially leached polycrystalline diamond body with at least a portion of the at least carbon-saturated material from the at least carbon-saturated infiltrant material and a portion of the plurality of interstitial regions of the at least partially leached polycrystalline diamond body adjacent to the substrate with a portion of the cobalt cementing constituent from the cobalt-cemented tungsten carbide substrate.
17. The method of claim 16 wherein the at least carbon-saturated material includes carbon-supersaturated material.
18. The method of claim 16 wherein the at least carbon-saturated material includes at least one material selected from the group consisting of cobalt, nickel, iron, copper, aluminum, titanium, tungsten, niobium, zirconium, tantalum, silicon, and boron.
19. The method of claim 16 wherein the at least carbon-saturated material includes at least one member selected from the group consisting of copper particles supersaturated with the non-diamond carbon and nickel particles supersaturated with the non-diamond carbon.
20. A method of fabricating a polycrystalline diamond compact, comprising:
mechanically milling a sintering aid material with non-diamond carbon to form an at least carbon-saturated sintering aid material, wherein the non-diamond carbon includes at least one material selected from the group consisting of lamp black, graphite, carbon-12 graphite, carbon-13 graphite, carbon nanotubes, graphene, amorphous carbon, and fullerenes;
sintering a plurality of diamond particles in the presence of the at least carbon-saturated sintering aid material to form a polycrystalline diamond body;
at least partially leaching the sintering aid material from the polycrystalline diamond body to form an at least partially leached polycrystalline diamond body including a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions;
forming an assembly including the at least partially leached polycrystalline diamond body, a cobalt-cemented tungsten carbide substrate including a cobalt cementing constituent therein, and an at least carbon-saturated infiltrant material positioned between the at least partially leached polycrystalline diamond body, the at least carbon-saturated infiltrant material including at least carbon-saturated material at least saturated with non-diamond carbon; and
subjecting the assembly to a high-pressure/high-temperature process effective to infiltrate a portion of the plurality of interstitial regions of the at least partially leached polycrystalline diamond body with at least a portion of the at least carbon-saturated material from the at least carbon-saturated infiltrant material and a portion of the plurality of interstitial regions of the at least partially leached polycrystalline diamond body adjacent to the substrate with a portion of the cobalt cementing constituent from the cobalt-cemented tungsten carbide substrate.