SILICON-BASED THERMOELECTRIC MATERIALS INCLUDING ISOELECTRONIC IMPURITIES, THERMOELECTRIC DEVICES BASED ON SUCH MATERIALS, AND METHODS OF MAKING AND USING SAME
Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same are provided. According to one embodiment, a thermoelectric material includes silicon and one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon. In one example, the thermoelectric material also includes germanium atoms disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of germanium in the silicon. Each of the one or more isoelectronic impurity atoms and the germanium atoms can independently substitute for a silicon atom or can be disposed within an interstice of the silicon.
1 . A thermoelectric material, comprising:
silicon; and
one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon.
2 . The thermoelectric material of claim 1 , further comprising germanium atoms disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of germanium in the silicon.
3 . The thermoelectric material of claim 2 , wherein each of the one or more isoelectronic impurity atoms and the germanium atoms independently substitutes for a silicon atom or is disposed within an interstice of the silicon.
4 . The thermoelectric material of claim 3 , wherein the silicon, the one or more isoelectronic impurity atoms, and the germanium atoms define a single phase of the thermoelectric material.
5 . The thermoelectric material of claim 2 , further comprising an N or P type dopant disposed within the silicon.
6 . The thermoelectric material of claim 5 , consisting essentially of the silicon, the one or more isoelectronic impurity atoms, the germanium atoms, and the N or P type dopant.
7 . The thermoelectric material of claim 2 , wherein the amount of the germanium atoms is approximately 0.001 atomic % to approximately 2 atomic %, and wherein the amount of each of the one or more isoelectronic impurity atoms is approximately 0.001 atomic % to approximately 2 atomic %.
8 . The thermoelectric material of claim 1 , wherein the amount of each of the one or more isoelectronic impurity atoms is approximately 0.001 atomic % to approximately 2 atomic %.
9 . A nanocrystal, nanowire, or nanoribbon comprising the thermoelectric material of claim 1 .
10 . The thermoelectric material of claim 1 , wherein the one or more isoelectronic impurity atoms include tin and carbon.
11 . The thermoelectric material of claim 1 , wherein the one or more isoelectronic impurity atoms include tin and lead.
12 . The thermoelectric material of claim 1 , wherein the one or more isoelectronic impurity atoms include carbon and the material further comprises germanium.
13 . The thermoelectric material of claim 1 , wherein the one or more isoelectronic impurity atoms include lead and the material further comprises germanium.
14 . A device for thermoelectric conversion, the device comprising:
a first electrode;
a second electrode;
a thermoelectric material disposed between the first electrode and the second electrode, the thermoelectric material comprising:
silicon; and
one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon.
15 - 21 . (canceled)
22 . The device of claim 14 , being configured to generate an electric current flowing between the first electrode and the second electrode through the thermoelectric material based on the first and second electrodes being at different temperatures than one another.
23 - 26 . (canceled)
27 . A method of making a thermoelectric material, the method comprising:
providing silicon; and
disposing one or more isoelectronic impurity atoms within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon.
28 - 35 . (canceled)
36 . The method of claim 27 , wherein disposing the one or more isoelectronic impurity atoms within the silicon comprises:
disposing the silicon within a diffusion furnace; and
diffusing the one or more isoelectronic impurity atoms into the silicon within the diffusion furnace.
37 . The method of claim 27 , wherein disposing the one or more isoelectronic impurity atoms within the silicon comprises:
obtaining a powdered mixture of silicon and the one or more isoelectronic impurity atoms; and
sintering the powdered mixture to form the silicon having the one or more isoelectronic impurity atoms disposed therein.
38 . The method of claim 27 , wherein disposing the one or more isoelectronic impurity atoms within the silicon comprises:
obtaining a melt of silicon and the one or more isoelectronic impurity atoms; and
solidifying the melt to form the silicon having the one or more isoelectronic impurity atoms disposed therein.
39 - 42 . (canceled)
43 . A method of making a thermoelectric device, the method comprising:
providing a thermoelectric material comprising:
silicon; and
one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon; and
disposing the thermoelectric material between a first electrode and a second electrode.
44 - 55 . (canceled)
56 . A method of using a thermoelectric device, the method comprising:
providing a thermoelectric device using the method of claim 43 ; and
generating an electric current flowing between the first electrode and the second electrode through the thermoelectric material based on the first and second electrodes being at different temperatures than one another.
57 . A method of using a thermoelectric device, the method comprising:
providing a thermoelectric device using the method of claim 43 ; and
pumping heat from the first electrode to the second electrode through the thermoelectric material responsive to an electrical current.
58 . The thermoelectric material of claim 1 , wherein the one or more isoelectronic impurity atoms include tin and the material further comprises germanium.
59 . The device of claim 14 , wherein the one or more isoelectronic impurity atoms include carbon and the material further comprises germanium.
60 . The method of claim 27 , wherein the one or more isoelectronic impurity atoms include carbon and the material further comprises germanium.
61 . The method of claim 43 , wherein the one or more isoelectronic impurity atoms include carbon and the material further comprises germanium.