According to the embodiments, a memory system includes a nonvolatile semiconductor memory and a writing-loop-count monitoring unit that monitors a loop count of an applied voltage to the nonvolatile semiconductor memory required for data writing of the nonvolatile semiconductor memory as a writing loop count. Moreover, the memory system includes a management table for managing the writing loop count in block unit that is a unit of data erasing and a life managing unit that determines a degraded state of the nonvolatile semiconductor memory based on the management table.
1. A system comprising:
a memory system; and
a management unit to be installed in a device to be connected to the memory system,
the management unit being configured to determine a state of a memory of the memory system, the memory system comprising:
a first semiconductor nonvolatile memory configured to store data, the first semiconductor nonvolatile memory including a spare region;
a second semiconductor nonvolatile memory configured to store management information of the first semiconductor nonvolatile memory including management information of the spare region;
a controller configured to control the first and second semiconductor nonvolatile memories;
a temperature sensor configured to detect temperature and to output temperature information; and
an LED configured to indicate status of the memory system, wherein
the second semiconductor nonvolatile memory is configured to store a value related to degradation of the spare region of the memory system, and
the management unit is configured to cause a display device to display a warning when the value related to the degradation of the spare region reaches a first threshold.
2. The system according to claim 1 , wherein
the second semiconductor nonvolatile memory is configured to store management information of the first semiconductor nonvolatile memory including information related to a total capacity of the first semiconductor nonvolatile memory.
3. The system according to claim 1 , wherein
the second semiconductor nonvolatile memory is configured to store management information of the first semiconductor nonvolatile memory including information related to an amount of data written to the first semiconductor nonvolatile memory.
4. The system according to claim 1 , wherein
the second semiconductor nonvolatile memory is configured to store management information of the first semiconductor nonvolatile memory including first information related to a total capacity of the first semiconductor nonvolatile memory and second information related to an amount of data written to the first semiconductor nonvolatile memory, and
the management unit is configured to calculate a ratio of the first and second information, and configured to cause the display device to display the ratio.
5. The system according to claim 1 , wherein
the controller is configured to control writing and reading to and from the first and second semiconductor nonvolatile memories.
6. The system according to claim 1 , wherein
the management unit is configured to cause the display device to further display a warning when the value related to the degradation of the spare region reaches a second threshold.
7. The system according to claim 1 , wherein
the management unit is configured to determine which stage, among a plurality of stages, the degradation is in, and cause the display device to display a warning that indicates the determined stage.
8. The system according to one of claim 1 , wherein
the value is a number that increases as a number of times of erasing operations of the first semiconductor nonvolatile memory increases.
9. A system comprising:
a memory system; and
a management unit to be installed in a device to be connected to the memory system,
the management unit being configured to determine a state of a memory of the memory system, the memory system comprising:
a first semiconductor nonvolatile memory configured to store data;
a controller configured to control the first semiconductor nonvolatile memory;
a temperature sensor configured to detect temperature and to output temperature information; and
an LED configured to indicate status of the memory system, wherein
the memory system is configured to store management information of the first semiconductor nonvolatile memory including first information related to a total capacity of the first semiconductor nonvolatile memory and second information related to an amount of data written to the first semiconductor nonvolatile memory, and
the management unit is configured to calculate a ratio of the first and second information, and configured to cause a display device to display the ratio.
10. The system according to claim 9 , wherein
the management unit is configured to cause the display device to display the ratio in response to a command input.
11. A memory system connected to a management unit to be installed in a device, the management unit being configured to determine a state of a memory of the memory system, the memory system comprising:
a first semiconductor nonvolatile memory configured to store data;
a second semiconductor nonvolatile memory configured to store management information of the first semiconductor nonvolatile memory;
a controller configured to control the first and second semiconductor nonvolatile memories;
a temperature sensor configured to detect temperature and to output temperature information; and
an LED configured to indicate status of the memory system, wherein
the second semiconductor nonvolatile memory is configured to store management information of the first semiconductor nonvolatile memory including first information related to a total capacity of the first semiconductor nonvolatile memory and second information related to an amount of data written to the first semiconductor nonvolatile memory, and
the management unit is configured to calculate a ratio of the first and second information, and configured to cause a display device to display the ratio.
12. The system according to one of claim 2 , wherein
the value is a number that increases as a number of times of erasing operations of the first semiconductor nonvolatile memory increases.
13. The system according to one of claim 3 , wherein
the value is a number that increases as a number of times of erasing operations of the first semiconductor nonvolatile memory increases.
14. The system according to one of claim 4 , wherein
the value is a number that increases as a number of times of erasing operations of the first semiconductor nonvolatile memory increases.
15. The system according to one of claim 5 , wherein
the value is a number that increases as a number of times of erasing operations of the first semiconductor nonvolatile memory increases.
16. The system according to one of claim 6 , wherein
the value is a number that increases as a number of times of erasing operations of the first semiconductor nonvolatile memory increases.
17. The system according to one of claim 7 , wherein
the value is a number that increases as a number of times of erasing operations of the first semiconductor nonvolatile memory increases.