Low-E Panels Utilizing High-Entropy Alloys and Combinatorial Methods and Systems for Developing the Same
Embodiments provided herein describe low-e panels utilizing high-entropy alloys (HEAs) and methods for forming such low-e panels, as well as combinatorial methods and systems for developing such low-e panels. A transparent substrate is provided. A reflective layer is formed above the transparent substrate. A metallic layer is formed above the transparent substrate. The metallic layer includes an HEA. The metallic layer, or any other component of the low-panels, may be formed using combinatorial processing.
1 . A method for evaluating materials, the method comprising:
providing a substrate, wherein the substrate has a plurality of site-isolated regions defined thereon;
forming a first metallic material above a first of the plurality of site-isolated regions with a first set of processing conditions;
forming a second metallic material above a second of the plurality of site-isolated regions with a second set of processing conditions; and
characterizing the first metallic material and the second metallic material,
wherein at least one of the first metallic material or the second metallic material comprises a high-entropy alloy, and wherein the second set of processing conditions is different than the first set of processing conditions.
2 . The method of claim 2 , wherein the high-entropy alloy comprises at least five metallic elements.
3 . The method of claim 2 , wherein the high-entropy alloy comprises between about 5% and about 35% of each of the at least five metallic elements by weight.
4 . The method of claim 3 , wherein the at least five metallic elements comprises five or more of iron, zinc, zirconium, aluminum, titanium, tungsten, tantalum, hafnium, copper, boron, niobium, chromium, hafnium, or a combination thereof.
5 . The method of claim 3 , wherein the forming of each of the first metallic material and the second metallic material each comprises positioning the at least one substrate relative to at least two targets.
6 . The method of claim 5 , wherein the forming of each of the first metallic material and the second metallic material each comprises causing material to be ejected from the at least two targets.
7 . The method of claim 6 , further comprising forming at least one dielectric layer above the at least one substrate.
8 . The method of claim 7 , further comprising forming a reflective layer above the at least one substrate.
9 . The method of claim 1 , wherein the characterizing the first metallic material and the second metallic material is performed using ellipsometry, atomic force microscopy (AFM), scanning electron microscopy (SEM), optical transmission and reflectance testing, X-Ray Diffraction (XRD), X-Ray Fluorescence (XRF), Fourier Transform Infrared (FTIR) spectroscopy, or a combination thereof.
10 . A method for evaluating materials, the method comprising:
providing a substrate, wherein the substrate has a plurality of site-isolated regions defined thereon;
forming a first high-entropy alloy material on a first of the plurality of site-isolated regions with a first set of processing conditions;
forming a second high-entropy alloy material on a second of the plurality of site-isolated regions with a second set of processing conditions; and
characterizing the first high-entropy alloy material and the second high-entropy alloy material,
wherein the second set of processing conditions is different than the first set of processing conditions.
11 . The method of claim 10 , the characterizing the first high-entropy alloy material and the second high-entropy alloy material is performed using ellipsometry, atomic force microscopy (AFM), scanning electron microscopy (SEM), optical transmission and reflectance testing, X-Ray Diffraction (XRD), X-Ray Fluorescence (XRF), Fourier Transform Infrared (FTIR) spectroscopy, or a combination thereof, and further comprising selecting one of the first set of processing conditions or the second set of processing conditions based on the characterizing of the first high-entropy alloy material and the second high-entropy alloy material.
12 . The method of claim 10 , wherein the first high-entropy alloy material and the second high-entropy alloy material each comprise between about 5% and about 35% of each of at least five metallic elements by weight.
13 . The method of claim 12 , wherein the at least five metallic elements comprises five or more of iron, zinc, zirconium, aluminum, titanium, tungsten, tantalum, hafnium, copper, boron, niobium, chromium, hafnium, or a combination thereof.
14 . The method of claim 10 , wherein the forming of the first high-entropy alloy material and the forming of the second high-entropy alloy material occur simultaneously.
15 . A method for evaluating materials, the method comprising:
providing a transparent substrate, wherein the transparent substrate has a plurality of site-isolated regions defined thereon;
forming a first high-entropy alloy material above a first of the plurality of site-isolated regions with a first set of processing conditions;
forming a second high-entropy alloy material above a second of the plurality of site-isolated regions with a second set of processing conditions; and
characterizing the first high-entropy alloy material and the second high-entropy alloy material,
wherein each of the first high-entropy alloy material and the second high-entropy alloy material comprises between about 5% and about 35% of each of at least five metallic elements by weight, and wherein the second set of processing conditions is different than the first set of processing conditions.
16 . The method of claim 15 , wherein the at least five metallic elements comprises five or more of iron, zinc, zirconium, aluminum, titanium, tungsten, tantalum, hafnium, copper, boron, niobium, chromium, hafnium, or a combination thereof.
17 . The method of claim 16 , wherein the forming of each of the first high-entropy alloy material and the second high-entropy alloy material comprises positioning the at least one transparent substrate relative to at least two targets.
18 . The method of claim 17 , wherein the forming of each of the first high-entropy alloy material and the second high-entropy alloy material comprises causing material to be ejected from the at least two targets.
19 . The method of claim 18 , wherein the characterizing the first high-entropy alloy material and the second high-entropy alloy material is performed using ellipsometry, atomic force microscopy (AFM), scanning electron microscopy (SEM), optical transmission and reflectance testing, X-Ray Diffraction (XRD), X-Ray Fluorescence (XRF), Fourier Transform Infrared (FTIR) spectroscopy, or a combination thereof, and further comprising selecting one of the first set of processing conditions or the second set of processing conditions based on the characterizing of the first high-entropy alloy material and the second high-entropy alloy material.